Summary The generalized diffusion theory of current transport inn-n isotype heterojunctions enunciated previously has been extended to the realistic case of there being two different electron
mobilities in the two semiconductors forming then-n heterojunction. This extended theory too reduces to the diffusion theory of current in metal-semiconductor contacts under
the appropriate limiting conditions in the same way as the previous theory does. The current-voltage characteristics forn-n heterojunctions according to this extended theory would be different from those according to the previous theory if the values
of all the parameters involved such as ΛnnC, ψD1, ψD2,V1,V2, etc. could be calculated rigorously. However, utilizing the values of some parameters such as Λnn andC calculated by means of approximate expressions derived under these limiting conditions, one would evaluate current-voltage
characteristics that are the same as in the previous theory. A single curve representing the current-voltage characteristic
of any particularn-n isotype heterojunction can also be plotted by using a formula derived previously under zero-current conditions, in conjunction
with the appropriate expressions derived in the present paper. In appendix B an alternative expression for the current density
in an-n isotype heterojunction is also derived in the framework of the generalized diffusion theory.
Riassunto La teoria della diffusione generalizzata del transporto di corrente nelle eterogiunzioni di isotropin-n enunciata in precedenza è stata estesa al caso realistico in cui vi sono due diverse mobilità di elettroni nei due semiconduttori
che formano l'eterogiunzionen-n, Anche questa teoria estesa si riduce alla teoria di diffusione della corrente nei contatti dei semiconduttori metallici
nelle condizioni limitanti appropriate nello stesso modo della teoria precedente. Le caratteristiche del voltaggio di corrente
per le eterogiunzioni n-n secondo questa teoria estesa sarebbero differenti da quelle secondo la teoria precedente se i valori
di tutti i parametri coinvolti come Λnn,C, ψD1, ψD2,V1,V2, ecc. potessero essere calcolati rigorosamente. Comunque, utilizzando i valori di alcuni parametri come Λnn eC calcolati per mezzo di espressioni approssimate dedotte in queste condizioni limitanti, si valuterebbero le caratteristiche
del voltaggio di corrente uguali a quelle delle teoria precedente. Si può anche tracciare una singola curva rappresentante
la caratteristica del voltaggio di corrente di ogni particolare eterogiunzione di isotopin-n usando una formula dedotta precedentemente in condizioni di corrente zero, assieme alle espressioni appropriate dedotte in
questo lavoro. Nell'appendice B si deduce anche un'espressione alternativa per la densità di corrente in un'eterogiunzione
di isotopin-n nel modello della teoria della diffusione generalizzata.
Рэзюме Обобщенная теория диффузэии для переноса тока в n-n гетеропереходе, развитая ранее, обобщается на реалистический случай, когде
в двук полупроводниках, образующих n-n гетеропереход, электроны имеют две различные подвижности. Предложенная обобщенная теииая
теория сводится к теории диффузии для тока в контакте металл-полупроводник при определенных ограничивающих условиях, как и
в случае предыдущей теории. Вольт-амперная характеристика для n-n гетероперереходов, согласно предлагаемой обобщенной теории,
будет отличаться от вольт-амперной характеристики предыдущей теории, если все парамеры теории Λnn, С, ψD1, ψD2,V1,V2 и т.д, могут быть вычислены строго. Однако, используя для некоторых параметров, таких как Λnn и С, приближенные выражения, вычисленные в рамках вышеуказанных ограничивающих условий, получаются вольт-амперные характеристики,
совпадающие с результатами предыдущей теории. Приводятся кривые для вольт-амперных характеристик для любого n-n гетероперехода.
В Приложении П в рамках обобщенной теории диффузии выводится альтернативное выражение для плотности тока в n-n гетеропереходе.
Summary Frequency domain measurements on Na2B4O7 and Na2B4O7(95%)-V2O5(5%) glass systems have been carried out in the frequency range 10−2 to 104 Hz and temperature range 300 to 450 K. The complex capacitance has shown fractional power law dependences on frequency which
obey the generalized Maxwell-Wagner relationships. The activation energy is found to increase with an increase in V2O5 composition. 相似文献
We apply ideas from C∗-algebra to the study of disordered topological insulators. We extract certain almost commuting matrices from the free Fermi Hamiltonian, describing band projected coordinate matrices. By considering topological obstructions to approximating these matrices by exactly commuting matrices, we are able to compute invariants quantifying different topological phases. We generalize previous two dimensional results to higher dimensions; we give a general expression for the topological invariants for arbitrary dimension and several symmetry classes, including chiral symmetry classes, and we present a detailed K-theory treatment of this expression for time reversal invariant three dimensional systems. We can use these results to show non-existence of localized Wannier functions for these systems.We use this approach to calculate the index for time-reversal invariant systems with spin–orbit scattering in three dimensions, on sizes up to 123, averaging over a large number of samples. The results show an interesting separation between the localization transition and the point at which the average index (which can be viewed as an “order parameter” for the topological insulator) begins to fluctuate from sample to sample, implying the existence of an unsuspected quantum phase transition separating two different delocalized phases in this system. One of the particular advantages of the C∗-algebraic technique that we present is that it is significantly faster in practice than other methods of computing the index, allowing the study of larger systems. In this paper, we present a detailed discussion of numerical implementation of our method. 相似文献
We study the spin ordering of a quantum dot defined via magnetic barriers in an interacting quantum spin Hall edge. The spin‐resolved density–density correlation functions are computed. We show that strong electron interactions induce a ground state with a highly correlated spin pattern. The crossover from the liquid‐type correlations at weak interactions to the ground state spin texture found at strong interactions parallels the formation of a one‐dimensional Wigner molecule in an ordinary strongly interacting quantum dot.
We investigate a tight-binding model of the ruby lattice with Rashba spin-orbit coupling. We calculate the band structure of the lattice and evaluate the Z2 topological indices. According to the Z2 topological indices and the band structure, we present the phase diagrams of the lattice with different filling fractions. We find that topological insulators occur in some range of parameters at 1/6, 1/3, 1/2, 2/3 and 5/6 filling fractions. We analyze and discuss the characteristics of these topological insulators and their edge states. 相似文献
AbstractWe study bulk/edge aspects of continuous honeycomb lattices in a magnetic field. We compute the bulk index of Bloch eigenbundles: it equals 2 or –2, with sign depending on nearby Dirac points and on the magnetic field. We then prove the existence of two topologically protected unidirectional waves propagating along line defects. This shows the bulk/edge correspondence for our class of Hamiltonians. 相似文献
We report a nuclear magnetic resonance (NMR) study on H+ beam irradiated Bi2Te3 powdered single crystals. In this work, we demonstrate that the beam creates defects within its penetration range giving rise to delocalized charge carriers, thereby making further 125Te NMR Knight shift and line broadening. Upon increasing temperature, the NMR line narrowing manifests the activated motions of thermally excited charge carriers in the irradiated sample. In contrast, it reveals that in the unirradiated sample the free-charge carriers at the Fermi level dominantly contribute to the Knight shift. Our results show that the orbital contribution to the Knight shift in the bulk state of Bi2Te3 becomes predominant in the system with the higher density of defects, as evidenced by modified electronic structures induced by the beam irradiation. 相似文献
Two-dimensional(2D) topological insulators(TTs,or quantum spin Hall insulators) are special insulators that possess bulk 2D electronic energy gap and time-reversal symmetry protected one-dimensional(1D) edge state.Carriers in the edge state have the property of spin-momentum locking,enabling dissipation-free conduction along the 1D edge.The existence of 2D TIs was confirmed by experiments in semiconductor quantum wells.However,the 2D bulk gaps in those quantum wells are extremely small,greatly limiting potential application in future electronics and spintronics.Despite this limitation,2D TIs with a large bulk gap attracted plenty of interest.In this paper,recent progress in searching for TIs with a large bulk gap is reviewed briefly.We start by introducing some theoretical predictions of these new materials and then discuss some recent important achievements in crystal growth and characterization. 相似文献