Analysis of Spectral Reflectance Using Normalization Method from Endoscopic Spectroscopy System

Objective assessment of gastrointestinal mucosal color is extremely important in the endoscopic diagnosis of digestive tract disease. In this paper, we propose a method to clarify the spectral characteristics of gastric and colon cancer. A large number of spectral reflectance data of mucous membrane are measured by the endoscopic spectroscopy system (ESS) in the National Cancer Center Hospital East, Kashiwa, Japan and the Department of Internal Medicine, Self-Defense Force Center Hospital, Tokyo, Japan. We assume that early cancer appears primarily in the spectral data of short wavelength, because it is usually present in a superficial cell where short wavelength light is scattered more strongly than long wavelength light. To identify the features in the short wavelength components, the spectral reflectance was divided by the reflectance of a long wavelength. We investigated the possibility of distinguishing early cancer from normal spectral data through statistical analysis, employing the projection axis as the mean difference between them. Early cancer and normal spectral data were projected on the projection axis, and the Student’s T-test was applied to evaluate the mean of the distribution between these data.     

Time variation of the electromagnetic transfer function of the earth estimated by using wavelet transform

In order to accurately estimate the geomagnetic transfer functions in the area of the volcano Mt. Iwate (IWT), we applied the interstation transfer function (ISTF) method to the three-component geomagnetic field data observed at Mt. Iwate station (IWT), using the Kakioka Magnetic Observatory, JMA (KAK) as remote reference station. Instead of the conventional Fourier transform, in which temporary transient noises badly degrade the accuracy of long term properties, continuous wavelet transform has been used. The accuracy of the results was as high as that of robust estimations of transfer functions obtained by the Fourier transform method. This would provide us with possibilities for routinely monitoring the transfer functions, without sophisticated statistical procedures, to detect changes in the underground electrical conductivity structure.     

氢氟酸腐蚀玻璃实验现象与机理探讨

对氢氟酸腐蚀玻璃实验现象进行了研究,发现了新的实验现象,并探讨了反应机理与反应表示式.     

Exciton reflectivity of GaAs/Ga1−x Al x As multiple quantum wells

Summary The normal incidence reflectivity spectrum of excitons in GaAs/Ga_1−x Al _x As multiple quantum wells is calculated within the local response approximation. It is shown that the reflectivity lineshape strongly depends on the sample geometry. Using realistic parameters of a multiple quantum well structure, we obtain an excellent fit of the experimental reflectivity curve, thus giving exciton energies, oscillator strengths and exciton broadening parameters.

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Riassunto Lo spettro di riflettività ad incidenza normale degli eccitoni nei pozzi quantistici multipli di GaAs/Ga_1−x Al _x As è calcolato nell’ambito dell’approssimazione locale. Si mostra con la forma della linea di riflettività dipende in gran misura dalla forma geometrica del campione. Usando parametri realistici di una struttura a pozzi quantistici multipli, si ottiene un’ottima approssimazione della curva di riflettività sperimentale, che fornisce così energie eccitoniche, forze dell’oscillatore e parameri di ampliamento eccitonico.

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Резюме В рамках приближения линейного отклика вычисляется спекрт отражательной способности экситонов при нормальном падении для множественных квантовых ям в GaAs/Ga_1−x Al _x As. Показывается, что форма линии отражательной способности сильно зависит от геометрии образца. Используя реалистические параметры структуры множественных квантовых ям, мы получаем хорошее соответствие с экспериментальной кривой для отражательной способности. Получаются энергии экситонов, силы осцилляторов и парам⪟тры экситонного уширения.

     

Current and shot noise in two capacitively coupled single electron transistors with an atomic sized spacer

The currents and their fluctuations in two capacitively coupled single electron transistors are determined in the limit of sequential tunnelling. Our considerations are restricted to the case when the islands (dots) of the transistors are atomic-sized, which means each of them has only one single electronic level available for the tunnelling processes. The Coulomb interactions of accumulated charges on the both single electron transistors lead to the effect of the negative differential resistance. An enhancement of the current shot-noise was also found. Spectral decomposition analysis indicated the two main contributions to the shot-noise: low- and high-frequency fluctuations. It was found that the low frequency fluctuations (polarization noise) are responsible for a strong enhancement of the current noise. Received 9 October 2001 / Received in final form 8 March 2002 Published online 9 July 2002     

Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.     

Magnetic pole pinning at rectangular defects on MnAs/GaAs(0 0 1)

Strong magnetic poles at characteristic rectangular defects have been observed using a magnetic force microscope on a MnAs(  1 0 0) thin film with the thickness of 30 nm. The MnAs thin film was epitaxially grown on a GaAs(0 0 1) substrate. The magnetic poles were in one-arranging direction, being independent of the magnetization direction of the film. The poles were pinned at the edges of the rectangular defects until just below the Curie temperature, and formed a stable magnetic-field loop on the MnAs surface. The stability of the magnetic pole pinning shows the distinctive feature of the magnetic domain structure on the surface with a strong anisotropy, which was built in the heterostructure of MnAs and GaAs.     

Influence of Relative Permeability on the Stability Characteristics of Immiscible Flow in Porous Media

Relative permeability functions for immiscible displacements in porous media show a wide range of profiles. Although, this behavior is well known, its impact on the stability of the displacement process is unexplored. Our analysis clearly demonstrates for the first time that the viscous instability characteristics of two-phase flows are governed not only by their end point values, but are strongly dependent on the actual profile of relative permeability functions. Linear stability analysis predicts the capacity of the flow to develop large scale fingers which can result in substantial bypassing of the resident fluid. It is observed that relative permeability functions attributed to drainage processes yield a more unstable displacement as compared to functions related to imbibition processes. Moreover, instability is observed to increase for those relative permeability functions which result from increased wettability of the wetting fluid. High accuracy numerical simulations show agreement with these predictions and demonstrate how large amplitude viscous fingers result in significant bypassing for certain relative permeability functions. In the nonlinear regime, the finger amplitude grows at a rate ∝ t^1/2 initially, drops to t^1/4 at a later time and finally grows ∝ t. The basic mechanisms of finger interaction, however, are not substantially influenced by relative permeability functions.     

快度中心区强子物质输运系数和粘滞流体演化

用Chapman-Enskog方法计算了相对论性重离子碰撞快度中心区产生的π介子物质的输运系数,并建立了相应的粘滞流体力学方程,进而讨论了粘滞对π介子物质演化过程的影响.结果表明,粘滞将减缓快度中心区π介子物质的冷却速度.