具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

为了优化传统Al GaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型Al GaN/GaN HEMTs器件结构.新型结构通过在Al GaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和Al GaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了Al GaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,Al GaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,Al GaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型Al GaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%.     

基于原位等离子体氮化及低压化学气相沉积-Si_3N_4栅介质的高性能AlGaN/GaN MIS-HEMTs器件的研究

通过对低压化学气相沉积(LPCVD)系统进行改造,实现在沉积Si_3N_4薄膜前的原位等离子体氮化处理,氮等离子体可以有效地降低器件界面处的氧含量和悬挂键,从而获得了较低的LPCVD-Si_3N_4/GaN界面态,通过这种技术制作的MIS-HEMTs器件,在扫描栅压范围V_(G-sweep)=(-30 V,+24 V)时,阈值回滞为186 mV,据我们所知为目前高扫描栅压V_(G+)(20 V)下的最好结果.动态测试表明,在400 V关态应力下,器件的导通电阻仅仅上升1.36倍(关态到开态的时间间隔为100μs).     

Strength and equation of state of molybdenum triboride under 80 GPa pressure,using radial X-ray diffraction

The strength and equation of state of molybdenum triboride have been determined under nonhydrostatic compression up to 80?GPa, using an angle-dispersive radial X-ray diffraction technique in a diamond anvil cell (DAC). The RXD data yield a bulk modulus and its pressure derivative as K_0?=?342(6)?GPa with K₀′?=?2.11(17) at ψ?=?54.7°. Analysis of diffraction data using the strain theory indicates that the ratio of differential stress to shear modulus (t/G) ranges from 0.002 to 0.050 at pressures of 4–80?GPa. Together with theoretical results on the high pressure shear modulus, our results here show that molybdenum triboride sample under uniaxial compression can support a differential stress of ～10?GPa when it started to yield with plastic deformation at ～30?GPa. In addition, we draw a conclusion that MoB₃ is not a superhard material but a hard material.     

Nondoped blue fluorescent OLED based on cyanophenanthrimidazole‐styryl‐triphenylamine/carbazole materials

New 2‐(4′‐9H‐carbazole‐9‐yl)‐styryl‐1H‐phenathro[9,10‐d]imidazole‐1‐yl)benzonitrile (SPICN‐Cz) and 4‐(2‐(4‐(diphenylamino)phenyl‐styryl‐1H‐phenathro[9,10‐d]imidazole‐1‐yl)benzonitrile (SPICN‐TPA) have been synthesised, and their photophysical, electrochemical, and electroluminescent properties were analysed in comparison with their cyano‐free parent compounds, SPI‐Cz, and SPI‐TPA. Solvatochromic effects show the transformation of an excited state character from locally excited (LE) state to charge transfer (CT) state. Using time‐dependent density functional theory calculation, the excited state properties of these donor‐acceptor blue emissive materials have been analysed. Their excited state properties have been tuned by replacing the strong donor triphenylamine to weak donor carbazole to achieve the combination of high photoluminance efficiency locally excited (LE) component and high exciton‐utilizing CT component in one excited state. Hybridization processes between LE and CT components of SPICN‐Cz and SPICN‐TPA in the emissive state have been discussed. The nondoped organic light emitting diode device based on SPICN‐Cz exhibit better electroluminescent performances than those of SPICN‐TPA–based device: high external quantum efficiency of 2.58 %, current efficiency of 2.90 cd A^‐1, and power efficiency of 2.26 lm W^‐1 with Commission Internationale de l'Éclairage (CIE) coordinates of (0.15, 0.12). The excited state modulation and the composition of LE and CT states in the donor‐acceptor system could be useful to design low‐cost, high‐efficiency fluorescent organic light emitting diode materials.     

Strategy of improving the stability and detonation performance for energetic material by introducing the boron atoms

A novel stable energetic compound (E)‐1,2‐diamino‐1,2‐dinitrodiboron (DANB) was theoretically designed based on the structure of 1,1‐diamino‐2,2‐dinitroethene (FOX‐7). Atomization method in combination with Hess' law was used to predict the heat of formation. The detonation velocity (D) and detonation pressure (P) of DANB were approximatively estimated by using Kamlet–Jacobs equations. As a result, DANB has huge heat of formation (2013.5 kJ/mol) and specific enthalpy of combustion (?26.4 kJ/g). Furthermore, DANB possesses high crystal density (1.85 g/cm³) and heat of detonation (5476.0 cal/g), which lead to surprising detonation performance (D = 10.72 km/s, P = 51.9 GPa) that is greater than those of FOX‐7 (D = 8.63 km/s, P = 34.0 GPa) and CL‐20 (D = 9.62 km/s, P = 44.1 GPa). More importantly, DANB is very stable because its bond dissociation energy of the weakest bond (BDE = 357.8 kJ/mol) is larger than those of the most common explosives, such as FOX‐7 (BDE = 200.4 kJ/mol), CL‐20(BDE = 209.2 kJ/mol), HMX(BDE = 165.7 kJ/mol), and RDX (BDE = 161.4 kJ/mol). Therefore, our results show that DANB is a promising candidate for stable and powerful energetic material.     

Development of picosecond time‐resolved X‐ray absorption spectroscopy by high‐repetition‐rate laser pump/X‐ray probe at Beijing Synchrotron Radiation Facility

A new setup and commissioning of transient X‐ray absorption spectroscopy are described, based on the high‐repetition‐rate laser pump/X‐ray probe method, at the 1W2B wiggler beamline at the Beijing Synchrotron Radiation Facility. A high‐repetition‐rate and high‐power laser is incorporated into the setup with in‐house‐built avalanche photodiodes as detectors. A simple acquisition scheme was applied to obtain laser‐on and laser‐off signals simultaneously. The capability of picosecond transient X‐ray absorption spectroscopy measurement was demonstrated for a photo‐induced spin‐crossover iron complex in 6 mM solution with 155 kHz repetition rate.     

基于自适应尺度的TLD目标跟踪算法

为提升TLD目标跟踪算法的每帧处理速度,以达到在更高分辨率视频中跟踪目标的实时性要求,在TLD算法框架的基础上,提出了一种基于自适应尺度检测学习的目标跟踪算法(AS-TLD)。当跟踪目标成功时,选取当前帧跟踪到的目标尺度及几个相邻的尺度作为下帧检测目标时滑动窗口尺度的选取范围;而当跟踪失败时,则选取在TLD算法初始化阶段,根据跟踪目标及视频图像大小选定的尺度来保障长时间跟踪目标,从而有效减少了平均每帧扫描的窗口数量。实验结果表明,该方法不仅有效地降低了检测模块的检测时间,显著提高了整体算法速度,而且通过动态选取尺度,在一定程度使得TLD各个模块更加协调,跟踪精确度得到提升。     

光电经纬仪机电一体化耦合特性

区别于传统刚体控制模型,将结构动态设计方法与控制理论相结合,构建了光电经纬仪的柔性机电耦合控制模型,分析了该模型的结构基频、阻尼比等机械因素与控制带宽的耦合关系,并提出了光电经纬仪动态量化设计准则.实验表明:光电经纬仪结构谐振频率ω_n应尽可能地远大于系统谐振频率ω_r,至少满足ω_n≥3ω_r.该方法有效可行,可解决高精度大型经纬仪机电谐振问题,为设计快速响应、高跟踪精度的光电经纬仪提供了工程依据.     

基于流固耦合作用的分布反馈式光纤激光水听器

为了解决流固耦合模态使水听器工作频带变窄的问题,理论分析了流体对双膜片结构的分布反馈式光纤激光水听器固有频率的影响,基于有限元软件对水听器加固封装前后在空气中和流体中的模态和频响性能进行仿真分析,加工制作了水听器原型样品并开展了水声实验研究.实验结果表明,在2 500~8 000Hz的频率范围内,未经加固封装的水听器由于在该频段内存在多个流固耦合固有频率造成响应曲线起伏较大,而采取了加固措施封装后的水听器获得了-142.77±0.8dB的平均声压灵敏度,验证了流体对水听器频响性能的影响以及改善措施的有效性,实验结果与理论及仿真结果吻合较好.     

基于长缝耦合的紧凑型TE31-TE11高功率微波模式变换器

提出了一种新型的TE31-TE11模式的紧凑型高功率微波模式转换器结构,在对比分析TE31和TE11两个模式的场分布特征相互关系基础上,通过在输入和输出圆波导组成的内外套筒结构和适当布置镜像对称分布的轴向耦合长缝,实现在小于1.2个波长的轴向长度内将相对论磁控管产生的L 波段TE31模式高功率微波转换为可定向辐射的圆波导TE11模式,采用全电磁波仿真结合Taguchi方法优化了模式转换器的几何参数,在工作频点获得的仿真模式转换效率为99%,效率高于95%的带宽达到10%,并对其工作于真空环境下的瞬态功率容量进行了仿真分析,理论的瞬态功率容量可达到3.4 GW。