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121.
采用平面波展开的方法计算了正方格子二维磁性光子晶体(MPC)的光子带隙结构.散射子的形状分别为:长方形,正方形,六角形和圆形.通过调节磁导率,填充率和散射子的旋转角度,找到了MPC各种结构的最大的绝对带隙宽高比ωR.研究发现:随着磁导率的增加,MPC绝对带隙中心频率ωg单调减小,绝对带隙宽度Δω和其宽高比ωR可能不同时达到最大值.而随着填充率或者散射子旋转角的增加,基本不改变ωg的大小,各种结构的Δω和ωR同时达到最大值.
关键词:
磁性光子晶体
光子带隙结构 相似文献
122.
During the course of our investigation of the electron transfer properties of some redox species through highly hydrophobic
long chain alkanethiol molecules on gold in aqueous and non-aqueous solvents, we obtained some intriguing results such as
unusually low interfacial capacitance, very high values of impedance and film resistance, all of which pointed to the possible
existence of a nanometer size interfacial gap between the hydrophobic monolayer and aqueous electrolyte. We explain this phenomenon
by a model for the alkanethiol monolayer—aqueous electrolyte interface, in which the extremely hydrophobic alkanethiol film
repels water molecules adjacent to it and in the process creates a shield between the monolayer film and water. This effectively
increases the overall thickness of the dielectric layer that is manifested as an abnormally low value of interfacial capacitance.
This behaviour is very much akin to the ‘drying transition’ proposed by Lum, Chandler and Weeks in their theory of length
scale dependent hydrophobicity. For small hydrophobic units consisting of apolar solutes, the water molecules can reorganize
around them without sacrificing their hydrogen bonds. Since for an extended hydrophobic unit, the existence of hydrogen bonded
water structure close to it is geometrically unfavourable, there is a net depletion of water molecules in the vicinity leading
to the possible creation of a hydrophobic interfacial gap. 相似文献
123.
"在非水介质中合成了纳米氧化锌,测定了纳米氧化锌的紫外吸收光谱,并用有效质量模型计算了粒子大小,开发并命名了一种称之为纳米粒子过饱和控制生长的技术,该技术涉及将小的纳米粒子悬浊液加入到大的粒子悬浊液中,结果因为不同大小粒子间的溶解度差异小的粒子将全部溶解,大的粒子将整体长大,大粒子悬浊液的粒子数将保持不变,大粒子的生长速度显著比Ostwald老化的高.该技术最显著的特征是只要最初两悬浊液粒子大小的差异足够大,分布不是太宽,则粒子大小的分布将会因为粒子如此长大而变窄." 相似文献
124.
First-principles study on the electronic structure and optical properties of T12Cd2(SO4)3 and Rb2Cd2(SO4)3 下载免费PDF全文
With the help of ab initio full-potential linearized augmented plane wave (FPLAPW) method, calculating the electronic structure and linear optical properties is carried out for XCd2(SO4)3 (X =Tl, Rb). The results show that Tl2Cd2(SO4)3 (TlCdS) has a larger band gap than Rb2Cd2(SO4)3 (RbCdS) and the energy bands for RbCdS are more dispersive than those of TlCdS. From their partial densities of states (PDOS), we have observed that the hybridization between S ionic 2p and O atomic 2p orbitals forms SO4 ionic groups. The remarkable difference between RbCdS and TlCdS is, however, the degree of hybridization between cation (Tl and Rb) and its surrounding oxygen atoms. In the view of quantum chemistry, the strong p-d hybridization indicates the existence of their cation ionic bonds (Cd-O, Rb-O, and Tl-O). The calculations of TlCdS and RbCdS show their optical properties to be less anisotropic. Their anisotropies in the optical properties mainly occur in a low photon energy region of 5-16 eV. 相似文献
125.
126.
采用分子束外延的方法在BaF2(111)衬底上制备出了高质量的Pb1-xMnxSe(0≤x≤0.0681)薄膜.X射线衍射结果表明,Pb1-xMnxSe薄膜为立方相NaCl型结构,没有观察到MnSe相分离现象,薄膜的取向为平行于衬底(111)晶面.晶格常数随着Mn含量的增加逐渐减小,Mn含量由Vegard公式得到.通
关键词:
1-xMnxSe外延薄膜')" href="#">Pb1-xMnxSe外延薄膜
透射光谱
带隙
折射率 相似文献
127.
128.
129.
Undoped and Cu2+ doped (0.2-0.8%) ZnS nanoparticles have been synthesized through chemical precipitation method. Tri-n-octylphosphine oxide (TOPO) and sodium hexametaphosphate (SHMP) were used as capping agents. The synthesized nanoparticles have been analyzed using X-ray diffraction (XRD), transmission electron microscope (TEM), Fourier transform infrared spectrometer (FT-IR), UV-vis spectrometer, photoluminescence (PL) and thermo gravimetric-differential scanning calorimetry (TG-DTA) analysis. The size of the particles is found to be 4-6 nm range. Photoluminescence spectra were recorded for ZnS:Cu2+ under the excitation wavelength of 320 nm. The prepared Cu2+-doped sample shows efficient PL emission in 470-525 nm region. The capped ZnS:Cu emission intensity is enhanced than the uncapped particles. The doping ions were identified by electron spin resonance (ESR) spectrometer. The phase changes were observed in different temperatures. 相似文献
130.
Thin films of ZnO-SnO2 composites have been deposited on Si(1 0 0) and glass substrates at 500 °C by pulsed laser ablation using different composite targets with ZnO amount varying between 1 and 50 wt%. The effect of increasing ZnO-content on electrical, optical and structural properties of the ZnO-SnO2 films has been investigated. X-ray diffraction analysis indicates that the as-deposited ZnO-SnO2 films can be both crystalline (for ZnO <1 wt%) and amorphous (for ZnO ≥ 10 wt%) in nature. Atomic force microscopy studies of the as-prepared composite films indicate that the surfaces are fairly smooth with rms roughness varying between 3.07 and 2.04 nm. The average optical transmittance of the as-deposited films in the visible range (400-800 nm), decreases from 90% to 72% for increasing ZnO concentration in the film. The band gap energy (Eg) seems to depend on the amount of ZnO addition, with the maximum obtained at 1 wt% ZnO. Assuming that the interband electron transition is direct, the optical band gap has been found to be in the range 3.24-3.69 eV for as-deposited composite films. The lowest electrical resistivity of 7.6 × 10−3 Ω cm has been achieved with the 25 wt% ZnO composite film deposited at 500 °C. The photoluminescence spectrum of the composite films shows a decrease in PL intensity with increasing ZnO concentration. 相似文献