Photoluminescence and electric spectroscopy of dislocation-induced electronic levels in semi-insulated CdTe and CdZnTe

We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL), contact less photoconductivity and resistivity. Plastic deformation increased the concentrations of grown-in defects, namely, those of an important midgap level E_C−0.74 eV in CdTe and Cd_1−xZn_xTe (x<0.1), the materials of choice in today’s X-ray and gamma ray detector technology. We confirmed the direct correlation between Y-emission and the dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density <2×10⁵ cm⁻²). Our results correlate with recent findings that dislocation-induced defects and their clusters degrade charge collection in radiation detectors. Photoluminescence of midgap levels can serve as a tool to identify areas of degraded performance in semi insulated CdTe and CdZnTe crystals for radiation detectors.     

论带“五等”字号的虚封爵——晋宋之际国家官爵制度上的变化之一

晋宋之际，国家官爵制度上发生的重要变化之一就是带“五等”字号虚封爵的出现。晋末特殊军事政治形势之下，京口北府集团凭借强势军功击败高门士族，取得压倒性的军事政治优势，京口北府军功受益阶层由此形成。带“五等”字号虚封爵适时地出现则成为这个现实政治变化的典型表现之一。笔者从这种虚封爵产生的时间和目的进行详细分析，以为正是出于酬赏义熙初年京口北府集团建义之功，朝廷才创设了这种虚封爵。这种虚封爵突破既有的门阀制度优势，确立了以军功为核心的分享军事政治利益的价值导向。这使得京口北府集团凭借军功所获取的军事政治利益不仅在制度层面上得到保障，而且在价值层面上取得其正当性和合法性，也就在这个时候，京口北府军功利益阶层得以成立。酬赏军功的这一目的也直接决定了虚封爵的若干特点，对此，笔者也予以分析说明。     

Improving Students＇ English Reading Skills

This paper aims to help students who study English as a second language improve reading skills. Based on the reading theoretical foundation, some problems which often encountered during the process of reading will be discussed. Finally, a conclusion as to how to solve these problems will be made.     

First‐principles identification of defect levels in Er‐doped GaN

Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first‐principles hybrid density functional study of the structure, energetics, and thermodynamic transition levels of Er‐related defect complexes in GaN. We discover for the first time that Er_Ga–C_N–V_N, a defect complex of Er, a C impurity, and an N vacancy, and Er_Ga–O_N–V_N, a complex of Er, an O impurity, and an N vacancy, form defect levels at 0.18 eV and 0.46 eV below the conduction band, respectively. Together with Er_Ga–V_N, a complex of Er and an N vacancy which has recently been found to produce a donor level at 0.61 eV, these defect complexes provide explanation for the Er‐related defect levels observed in experiments. The role of these defects in optical excitation of the luminescent Er center is also discussed.     

椭圆曲线密码的一种合适的对算法

在椭圆曲线密码的应用中,有些密码体制需要进行标量乘法对计算,通常在标量乘法计算时,任一整数对采用的是三元联合稀疏形式表示.在三元稀疏形式的基础上提出任一整数对的五元联合稀疏形式表示,并把这种形式用于快速Shamir算法计算标量乘法对,并证明五元联合稀疏形式比三元联合形式更有效.     

Influence of Ga/(Ga + In) grading on deep‐defect states of Cu(In,Ga)Se2 solar cells

The benefits of gallium (Ga) grading on Cu(In,Ga)Se₂ (CIGS) solar cell performance are demonstrated by comparing with ungraded CIGS cells. Using drive‐level capacitance profiling (DLCP) and admittance spectroscopy (AS) analyses, we show the influence of Ga grading on the spatial variation of deep defects, free‐carrier densities in the CIGS absorber, and their impact on the cell's open‐circuit voltage V_oc. The parameter most constraining the cell's V_oc is found to be the deep‐defect density close to the space charge region (SCR). In ungraded devices, high deep‐defect concentrations (4.2 × 10¹⁶cm^–3) were observed near the SCR, offering a source for Shockley–Read–Hall recombination, reducing the cell's V_oc. In graded devices, the deep‐defect densities near the SCR decreased by one order of magnitude (2.5 × 10¹⁵ cm^–3) for back surface graded devices, and almost two orders of magnitude (8.6 × 10¹⁴ cm^–3) for double surface graded devices, enhancing the cell's V_oc. In compositionally graded devices, the free‐carrier density in the absorber's bulk decreased in tandem with the ratio of gallium to gallium plus indium ratio GGI = Ga/(Ga + In), increasing the activation energy, hindering the ionization of the defect states at room temperature and enhancing their role as recombination centers within the energy band. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Reducing Detrimental Defects for High‐Performance Metal Halide Perovskite Solar Cells

In several photovoltaic (PV) technologies, the presence of electronic defects within the semiconductor band gap limit the efficiency, reproducibility, as well as lifetime. Metal halide perovskites (MHPs) have drawn great attention because of their excellent photovoltaic properties that can be achieved even without a very strict film‐growth control processing. Much has been done theoretically in describing the different point defects in MHPs. Herein, we discuss the experimental challenges in thoroughly characterizing the defects in MHPs such as, experimental assignment of the type of defects, defects densities, and the energy positions within the band gap induced by these defects. The second topic of this Review is passivation strategies. Based on a literature survey, the different types of defects that are important to consider and need to be minimized are examined. A complete fundamental understanding of defect nature in MHPs is needed to further improve their optoelectronic functionalities.     

多运行水平马尔可夫可修系统可靠性分析

为了更准确地刻画马尔可夫可修系统的运行特征,建立了多运行水平马尔可夫可修系统模型.在该系统中,工作状态被聚合成几个不同的运行水平.应用离子通道理论和Laplace变换方法,给出系统在不同运行水平逗留时间密度函数的Laplace变换及平均逗留时间.分析了系统访问不同运行水平的次数,得到它们的分布律及平均值.通过一个数值示例说明了结论的应用,表明了该模型的有效性.     

C_2^+ (X^4 Σ_g^-,1^4 Σ_u^+)离子体系解析势能函数、光谱常数和振动能级研究

采用多参考组态相互作用(MRCI)方法,结合aug-cc-pV6Z(AV6Z)基组,计算了C₂⁺(X⁴Σ_g^-,1⁴Σ_u⁺)的势能曲线,计算过程中考虑了Davidson修正和相对论效应,并将结果外推至完备基组(CBS)的极限.基于得到的单点能量,用最小二乘法方法进行了Murrell-Sorbie函数拟合,得到了势能函数解析式(APEF).基于APEF,计算了C₂⁺(X⁴Σ_g^-,1⁴Σ_u⁺)离子体系的离解能D_e,平衡核间距R_e,光谱常数ω_e,ω_eχ_e,B_e,α_e,结果与实验和其他理论计算值符合...     

Lidstone边值问题多个单调正解的存在性

对含有各阶导数的2m阶微分方程:y(2m)(t)=f(t,y(t),y′(t),…,y(2m-2)(t),y(2m-1)(t)),t∈(0,1),y(2i+1)(0)=y(2i)(1)=0,0≤i≤m-1,其中(-1)mf:[0,1]×R2m→[0,∞)是连续的。笔者首先给出方程的Green函数及其一些性质,并赋予f一定的增长条件,利用5个泛函的不动点定理,然后给出上述边值问题的3个单调正解的存在性。