一个具有Markov性的入圈问题

研究序列{Xn},{Xn}满足Xn=Yn(mod 2),其中Yn∈Z+,Y0≥2,Yn+1=Yn+[Yn/2],证明了{Xn}为一独立随机变量序列,并且是一时间齐次Markov链.最后,利用该Markov链{Xn}的性质,证明了入圈问题经过有限次插点,Cm的任意一边上都至少插入一个新点.     

Dynamic Release of Propranolol HCl from Cationic Ion–Exchanger–Loaded Calcium Alginate Beads

The dynamic release of drug propranolol HCl from the propranolol HCl–resin complex (PRC) loaded calcium alginate beads has been studied in the buffer media of pH 1.2 at the physiological temperature 37°C. The PRC encapsulated beads demonstrated nearly 58.04% release while naked PRC particles released 98.00% drug in 24 h in the gastric fluid. The amount of drug released was found to increase with and decrease in the amount of sodium alginate in the beads. Similarly, with the increase in the amount of entrapped PRC particles within the beads, the quantity of drug released was also observed to increase. The degree of crosslinking of beads also affected the release kinetics. Interestingly, the release from naked PRC particles followed ‘first‐order’ kinetics while PRC particles, entrapped in calcium–alginate beads, exhibited ‘diffusion controlled’ release behavior as indicated by liner nature of fractional release vs. √t plot.     

First‐Principles Investigation of Anisotropic Electron and Hole Mobility in Heterocyclic Oligomer Crystals

Based on quantum chemistry calculations combined with the Marcus–Hush electron transfer theory, we investigated the charge‐transport properties of oligothiophenes (nTs) and oligopyrroles (nPs) (n=6, 7, 8) as potential p‐ or n‐type organic semiconductor materials. The results of our calculations indicate that 1) the nPs show intrinsic hole mobilities as high as or even higher than those of nTs, and 2) the vertical ionization potentials (VIPs) of the nPs are about 0.6–0.7 eV smaller than the corresponding VIPs of the nTs. Based on their charge‐transport ability and hole‐injection efficiency, the nPs have potential as p‐type organic semiconducting materials. Furthermore, it was also found that the maximum values of the electron‐transfer mobility for the nTs are larger by one‐to‐two orders of magnitude than the corresponding maximum values of hole‐transfer mobility, which suggests that the nTs have the potential to be developed as promising n‐type organic semiconducting materials owing to their electron mobility.     

基于第一性原理的无铅无机钙钛矿Cs3Bi2X9(X=Cl、Br、I)光电性能表面效应研究

用基于第一性原理的密度泛函理论方法,对Cs₃Bi₂X₉(X=Cl、Br、I)的光电特性进行理论计算,并系统阐述这3种晶体的表面效应对光电性能的影响。结果表明,3种材料的光学特性由铋原子和卤素原子最外层p轨道上的价电子主导。在可见光区中,材料的吸收峰会随卤素原子序数的增加呈现红移,其中一维结构的Cs₃Bi₂Cl₉表面结构在光吸收能力上尤为特别且敏感;二维结构的Cs₃Bi₂Br₉光吸收能力会受厚度影响;零维结构的Cs₃Bi₂I₉非常稳定,且几乎不受表面特性和晶体厚度的影响。     

H2S splitting on Cu(110): Insight from combined periodic density functional theory calculations and microkinetic simulation

Practical copper (Cu)‐based catalysts for the water–gas shift (WGS) reaction was long believed to expose a large proportion of Cu(110) planes. In this work, as an important first step toward addressing sulfur poisoning of these catalysts, the detailed mechanism for the splitting of hydrogen sulfide (H₂S) on the open Cu(110) facet has been investigated in the framework of periodic, self‐consistent density functional theory (DFT‐GGA). The microkinetic model based on the first‐principles calculations has also been developed to quantitatively evaluate the two considered decomposition routes for yielding surface atomic sulfur (S*): (1) H₂S → H₂S* → SH* → S* and (2) 2H₂S → 2H₂S* → 2SH* → S* + H₂S* → S* + H₂S. The first pathway proceeding through unimolecular SH* dissociation was identified to be feasible, whereas the second pathway involving bimolecular SH* disproportionation made no contribution to S* formation. The molecular adsorption of H₂S is the slowest elementary step of its full decomposition, being related with the large entropy term of the gas‐phase reactant under realistic reaction conditions. A comparison of thermodynamic and kinetic reactivity between the substrate and the close‐packed Cu(111) surface further shows that a loosely packed facet can promote the S* formation from H₂S on Cu, thus revealing that the reaction process is structure sensitive. The present DFT and microkinetic modeling results provide a reasonably complete picture for the chemistry of H₂S on the Cu(110) surface, which is a necessary basis for the design of new sulfur‐tolerant WGS catalysts. © 2013 Wiley Periodicals, Inc.     

Abundant explicit exact solutions to the generalized nonlinear Schrödinger equation with parabolic law and dual‐power law nonlinearities

This paper is concerned with the generalized nonlinear Schrödinger equation with parabolic law and dual‐power law. Abundant explicit and exact solutions of the generalized nonlinear Schrödinger equation with parabolic law and dual‐power law are derived uniformly by using the first integral method. These exact solutions are include that of extended hyperbolic function solutions, periodic wave solutions of triangle functions type, exponential form solution, and complex hyperbolic trigonometric function solutions and so on. The results obtained confirm that the first integral method is an efficient technique for analytic treatment of a wide variety of nonlinear systems of partial DEs. Copyright © 2014 John Wiley & Sons, Ltd.     

The isometric extension problem between unit spheres of two separable Banach spaces

In this article, we use some analytic and geometric characters of the smooth points in a sphere to study the isometric extension problem in the separable or reflexive real Banach spaces. We obtain that under some condition the answer to this problem is affirmative.     

Homoclinic orbits for first order Hamiltonian systems with some twist conditions

In this paper, we study the nonperiodic first-order Hamiltonian system ù = J L(t)u +J H(t, u), where H ∈ C1(R × R2n). With some assumptions on L, the corresponding Hamiltonian operator has only discrete spectrum. By using the index theory for self-adjoint operator equation,we establish the existence of multiple homoclinic orbits for the asymptotically quadratic nonlinearty satisfying some twist conditions between infinity and origin.     

V掺杂ZnO透明导电薄膜研究

本文分别采用磁控溅射技术与基于密度泛函理论的平面波赝势方法两种方式, 对高价态差元素V掺杂ZnO薄膜进行研究. 实验研究结果表明: V的掺入并未改变ZnO的生长方式, 所制备的薄膜都呈(002)择优生长; 随着衬底温度增加, VZO薄膜的结晶质量逐步改善, 当衬底温度超过280 ℃时薄膜的结晶质量恶化; 在280 ℃时获得的VZO薄膜电阻率最低3.8×10^-3 Ω·m, 500-2000 nm平均透过率高于85%. 理论模拟结果表明: V以替位形式掺入ZnO六角纤锌矿晶格结构中, 费米能级进入导带, 材料表现出n 型半导体的特性, 导电电子主要由V 3d及O 2p电子轨道提供. 理论计算结果与实验结果的一致性, 表明VZO薄膜具有作为高效Si基薄膜太阳电池透明导电薄膜的应用潜力.     

First‐principles identification of defect levels in Er‐doped GaN

Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first‐principles hybrid density functional study of the structure, energetics, and thermodynamic transition levels of Er‐related defect complexes in GaN. We discover for the first time that Er_Ga–C_N–V_N, a defect complex of Er, a C impurity, and an N vacancy, and Er_Ga–O_N–V_N, a complex of Er, an O impurity, and an N vacancy, form defect levels at 0.18 eV and 0.46 eV below the conduction band, respectively. Together with Er_Ga–V_N, a complex of Er and an N vacancy which has recently been found to produce a donor level at 0.61 eV, these defect complexes provide explanation for the Er‐related defect levels observed in experiments. The role of these defects in optical excitation of the luminescent Er center is also discussed.