POLYMER NETWORK-POLY(ETHYLENE GLYCOL)COMPLEXES WITH SHAPE MEMORY EFFECT

The complexes of poly(methacrylic acid-co-methyl methacrylate) network with poly(ethylene glycol) stabilized byhydrogen bonds were prepared. By introducing the poly(ethylene glycol), a large difference in storage modulus below andabove the glass transition temperature occurred and the complexes exhibited shape memory behaviors. The morphology ofcomplexes was studied by using DSC, WAXD, and DMA. The results indicate that the fixed phase of this kind of novelshape memory materials is the network, and the reversible phase is the amorphous state of PEG:PMAA complex phase. Theshape recoverability almost reaches 100%. This type of complexes can be regarded as a novel shape memory network.     

Glycol-based sol-gel process for the fabrication of ferroelectric PZT thin films

A new sol-gel system using ethylene glycol was developed for the fabrication of PZT thin films with compositions near the morphotropic phase boundary Pb(Zr_0.52Ti_0.48)O₃. Ethylene glycol was used as both a chelating agent and a solvent to replace the highly toxic methoxyethanol used in previous formulations. Thin films were deposited by spin coating the solutions onto platinized silicon substrates. Films were completely crystallized by about 600°C and contained the ferroelectric perovskite phase. A dielectric constant of about 750–800 at 1 KHz was obtained for thin films of 0.3 µm thickness. The hysteresis measurements revealed a remanent polarization of 15 mC/cm² with a coercive field of 60 kV/cm.     

Preparation and Characterization of a Sol-Gel Prepared Ferroelectric Sandwich Structure

A novel silicon-based PbTiO₃/Pb(Zr,Ti)O₃/PbTiO₃ (PT/PZT/PT) sandwich structure has been prepared using a sol-gel method. The annealing temperature is greatly reduced compared with those structures without PT layers. Capacitance-voltage (C-V), leakage current-voltage (I-V), polarization-field (P-E), dielectric-frequency response and polarization fatigue of the sandwich structure are examined. The relative dielectric constant, the coercive field and the remanent polarization of the PZT films are measured to be about 900, 18 kV/cm and 16 C/cm² respectively. The current density is less than 5 × 10^–9 A/cm² below 200 kV/cm. The dielectric constant of the structure remains constant at low frequency, and decreases to some degree at high frequency. The retained polarization does not change significantly after 8 × 10⁹ read/write cycles. The PZT films are proved to have very good dielectric and ferroelectric properties. The new PT/PZT/PT sandwich structure can be valuable for memory devices and other applications.     

Effect of Niobium Modifications to PZT (53/47) Thin Films Made by a Sol-Gel Route

Niobium-modified lead zirconate titanate thin films (PNZT) with nominal compositions, Pb_(1–0.5x) (Zr_0.53 Ti_0.47)_1–x Nb _x O₃:x = 0.02–0.07, have been prepared using a diol based sol-gel route. Single-layer (0.5 m) films were fabricated on platinised silicon substrates by spin-coating. The effect of niobium additions with regard to phase development, microstructure, and ferroelectric and dielectric properties were investigated for different annealing temperatures. For comparison, unmodified PZT films were also prepared. Niobium substitution increased the crystallisation temperatures for perovskite PNZT phase formation. The values of remanent polarisation P _r and dielectric constant _r were found to decrease with the introduction of Nb. For example, in films heated at 700°C for 15 min, the P _r value of an unmodified PZT film was 31 C cm^–2, compared to 17 C cm^–2 for an x = 0.05 PNZT film, whilst respective relative permittivity values fell from 1190 to 600. The highest Nb concentration film, x = 0.07, did not display any switchable polarisation characteristics, which is consistent with high levels of intermediate pyrochlore phase.     

Rigorous bounds on the storage capacity of the dilute Hopfield model

We study a neural network model consisting ofN neurons where a dendritic connection between each pair of neurons exists with probabilityp and is absent with probability 1-p. For the Hopfield Hamiltonian on such a network, we prove that ifp c[(lnN)/N]^1/2, the model can store at leastm= _cpN patterns, where _c 0.027 ifc 3 and decreases proportional to 1/(–lnc) forc small. This generalizes the results of Newman for the standard Hopfield model.     

圆纬机电子选针器下位机控制系统的研究与实践

本文以PC104为上位机，89C51单片机为下位机的主从两级控制系统的电子选针硬软件设计。重点阐述了下位机存储管理程序和电子选针过程的数据读取程序的设计。系统经调试运行满足圆纬机电子选针的要求，实现了多路电子选针的目的。     

基于VC++的网络实时通信

面向地区电网的仿真系统采用客户／服务器模式，在Windows系统中用Visual C 开发通信程序实现数据实时通信．对实时通信的系统结构、通信编程及通信系统中的几个关键17题进行了详细的论述．     

新型功能材料驱动的高性能电液伺服阀

与传统伺服阀相比,以新型功能材料为电-机械转换器的电液伺服阀,具有高频响、高精度和易于微型化等优点。介绍了几种基于新型功能材料(超磁致伸缩材料GMM、电致伸缩材料PMN和形状记忆合金SMA等)的电液伺服阀的结构组成和工作原理,并对它们的各自特点进行了对比分析。最后对新型功能材料,特别是超磁致伸缩材料GMM,在高性能电液伺服阀的应用现状进行了展望。     

显示位图文件的一种简便方法

如何从BMP文件读出图像并显示在MFC应用程序窗口，现已有很多实现方法。通过一个程序实例，介绍了一种非常简单位图文件显示方法，所需代码只有十余行，短小实用。     

混沌神经网络在分离叠加模式和信息恢复中的应用

提出了一种改进的混沌神经网络模型，该模型具有两个特点：①能从叠加模型恢复出被记忆的正确信息；②能通过部份信息恢复被记亿的全部信息．设计了一系列的仿真实验证明了所提模型的有效性。