歧口凹陷断裂构造特征及其控油气作用

以基础地质、地球物理资料等为基础,系统分析歧口凹陷断裂构造平面、剖面构造特征,并通过关键时期断层活动性分析、主要油源断层的厘定、断层封闭系数计算等,进一步探讨歧口凹陷构造控油气作用,对歧口凹陷断裂构造取得新的认识,明确区内断裂构造特征及其控油气作用。研究表明,歧口凹陷平面上主要发育NNE、NE、EW和近EW向4组断裂,剖面上表现出多种典型的伸展构造样式、伸展-走滑构造样式;断层的活动性具有明显的分段特征,其中,Es_3时期、Es_1时期和Ed时期断层活动性强,Ng时期以来断层活动性明显减弱。研究区发育7条主要油源断层, Es_1—Ed时期断层封闭系数均较低,不利于油气成藏,Ng—Nm时期断层封闭系数明显优于Ed时期,以4～6为主,成为歧口凹陷油气成藏与分布的主控因素。     

ZSX PrimusⅡ型X射线荧光光谱仪测角仪故障处理与维护

总结了日本理学ZSX Primus Ⅱ型X射线荧光光谱仪测角仪在使用过程中出现的常见故障,介绍了简单实用的排除处理方法.     

Bipartite Locating Array

As a special case of experimental design,locating array is useful for locating interaction faults in component-based systems.In this paper,bipartite locating array is proposed to locate interaction faults between two specific groups.Such arrays are especially suitable for antagonism tests.Based on the definition of bipartite locating array,the lower bound on run sizes are established to measure the optimality for specific parameters.When a single fault is to be located,optimal bipartite locating arrays are proved to be equivalent to certain specific combinatorial configurations.As a result,approaches to constructing optimal bipartite locating arrays are proposed and some infinite classes of optimal bipartite locating arrays are obtained using the corresponding construction met hod.     

EX-6000X荧光能谱仪电路结构及典型故障

简述EX-6000X荧光能谱仪的电路基本结构,并分析了各电路功能、工作原理,典型故障及其排除方法.为仪器的应用与维修提供参考.     

机械设备故障规律与维修策略研究

按照RCM的基本原理,分析了机械设备潜在性故障和功能故障以及P-F间隔期及其有效性和适用性准则。阐述了机械设备的故障规律及早期故障期、偶发故障期、耗损故障期的特点,最后依据不同的故障规律,选择不同的维修策略。     

辽宁东五家子金矿控矿断裂及其构造岩研究

介绍了辽宁东五家子金矿控矿断裂的几何学、构造学与构造岩特征,指出NE向凌源-北票断裂与矿区东部的NW向二道营子断裂是金矿成矿的导矿断裂,二断裂旁侧的次级NW向与NE向断裂为金矿的容矿断裂.两组断裂均为长期多次活动断裂,早期活动具强烈韧性变形特征,晚期在韧性剪切带基础上再叠加脆性断裂.在此基础上探讨了两组断裂的控矿规律.     

鼠笼电机转子导条及端环断裂问题研究的仿真方法

提出了一种用于仿真分析具有转子导条及端环断裂故障的鼠笼异步电机的运行行为的方法。因而可方便地描述具有任意断裂导条和端环数的转子故障状况。同其它方法相比，不但可以用于电机的稳态分析，也能用于其暂态分析。     

Mn对L_(10)-TiAl金属间化合物延性的改善作用

本研究测定了64wt-％ Ti+(36-X)wt-％ Al+Xwt-％Mn(X=0,0.5,1.0,1.5,2.0)合金系列的抗弯性能,实验结果表明:适量的Mn可以显著地改善TiAl金属间化合的的延性。本文从合金组织、晶体结构及位错组态的变化出发,探讨了Mn的作用机制,得出了如下结论:a.Mn的加入使TiAl合金的晶粒显著细化,减少位错在晶内的塞积长度,从而较难造成裂纹形核所需的应力集中,同时裂纹在位向不同的晶粒内传播也更困难,使合金在断裂前可承受较大的变形。b.TiAl合金的晶格常数轴比(c/a)随Mn含量的增加而趋近于1,提高了晶体的对称性和变形协调性。c.Mn具有稳定TiAl合金中孪晶组织的作用,使TiAl合金的孪生变形较为容易,从而,当正常位错发生缠结、不能对塑性变形进一步作出贡献时,孪生变形将起着主要作用。d.与TiAl二元合金相比,变形后的TiAl+Mn三元合金中,层错明显增多,这表明超位错的运动对TiAl+Mn合金的塑性变形也起着重要的作用。     

Structure and possible origins of stacking faults in gamma-yttrium disilicate

Parallel stacking faults on (010) planes are frequently observed in hot-pressed Y₂Si₂O₇. A combination of conventional dark-field imaging and high-resolution transmission electron microscopy was used to investigate the structure of these faults. It was found that they consisted of the repeat of one layer of the two-layer γ-Y₂Si₂O₇ structure with an associated in-plane rigid body displacement. The resulting structure was confirmed by image simulation of high-resolution images from two perpendicular projections. A model for the formation of the stacking faults is proposed as a consequence of a transformation from β-Y₂Si₂O₇ to γ-Y₂Si₂O₇ in the hot pressing.     

Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructures

Abstract

Crystal defects, present in ~100 nm GaAs nanocrystals grown by metal organic vapour phase epitaxy on top of (0 0 1)-oriented Si nanotips (with a tip opening 50–90 nm), have been studied by means of high-resolution aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. The role of 60° perfect, 30° and 90° Shockley partial misfit dislocations (MDs) in the plastic strain relaxation of GaAs on Si is discussed. Formation conditions of stair-rod dislocations and coherent twin boundaries in the GaAs nanocrystals are explained. Also, although stacking faults are commonly observed, we show here that synthesis of GaAs nanocrystals with a minimum number of these defects is possible. On the other hand, from the number of MDs, we have to conclude that the GaAs nanoparticles are fully relaxed plastically, such that for the present tip sizes no substrate compliance can be observed.