TEM study on relationship between stacking faults and non-basal dislocations in Mg

Recent interest in the study of stacking faults and non-basal slip in Mg alloys is partly based on the argument that these phenomena positively influence mechanical behaviour. Inspection of the published literature, however, reveals that there is a lack of fundamental information on the mechanisms that govern the formation of stacking faults, especially I1-type stacking faults (I1 faults). Moreover, controversial and sometimes contradictory mechanisms have been proposed concerning the interactions between stacking faults and dislocations. Therefore, we describe a fundamental transmission electron microscope investigation on Mg 2.5 at. % Y (Mg–2.5Y) processed via hot isostatic pressing (HIP) and extrusion at 623 K. In the as-HIPed Mg–2.5Y, many 〈c〉 and 〈a〉 dislocations, together with some 〈c + a〉 dislocations were documented, but no stacking faults were observed. In contrast, in the as-extruded Mg–2.5Y, a relatively high density of stacking faults and some non-basal dislocations were documented. Specifically, there were three different cases for the configurations of observed stacking faults. Case (I): pure I2 faults; Case (II): mixture of I1 faults and non-basal dislocations having 〈c〉 component, together with basal 〈a〉 dislocations; Case (III): mixture of predominant I2 faults and rare I1 faults, together with jog-like dislocation configuration. By comparing the differences in extended defect configurations, we propose three distinct stacking fault formation mechanisms for each case in the context of slip activity and point defect generation during extrusion. Furthermore, we discuss the role of stacking faults on deformation mechanisms in the context of dynamic interactions between stacking faults and non-basal slip.     

Robust reliable sampled‐data H∞ control for uncertain stochastic systems with random delay

In this article, the problem of robust reliable sampled‐data control for a class of uncertain nonlinear stochastic system with random delay control input against actuator failures has been studied. In the considered system, the parameter uncertainty satisfies the norm bounded condition and the involved time delay in control input are assumed to be randomly time‐varying which is modeled by introducing Bernoulli distributed sequences. By constructing a novel Lyapunov–Krasovskii functional involving with the lower and upper bounds of the delay, a new set of sufficient conditions are derived in terms of linear matrix inequalities (LMIs) for ensuring the robust asymptotic stability of the uncertain nonlinear stochastic system with random delay and disturbance attenuation level about its equilibrium point for all possible actuator failures. In particular, Schur complement together with Jenson's integral inequality is utilized to substantially simplify the derivation in the main results. The derived analytic results are applied to design robust reliable sampled‐data controller for hanging crane structure model and simulation results are provided to demonstrate the effectiveness of the proposed control law. © 2014 Wiley Periodicals, Inc. Complexity 21: 42–58, 2015     

故障模拟电路的故障数k值研究

本文从网格的有限可及的端口出发，测算其入端转移阻抗，建立故障与正常状态下转移阻抗差值矩阵，并根据其秩的情况，来预测电路可能的故障数或故障支路间的关系。这为减少组合验证时的盲目性，为确诊故障提供了一个理论依据。     

Stacking faults in close-packed clusters

Ground state geometries of small hard sphere clusters were studied using two different type of contact interaction, a pair-potential and a many-atom interaction. Monte Carlo method in an FCC lattice with all possible (111) stacking faults was used to obtain the minimum energy geometries for clusters up to 59 atoms. Due to the surface energy, FCC packing is generally favoured as opposite to the HCP structure. However, in most cluster sizes the ground state obtained with the many-atom interaction has one or more stacking faults. The most symmetric geometry is usually not the ground state. Clusters with 59 and 100 atoms were studied due the possibility of a high symmetry cluster with stacking faults in all four directions. The size dependence of the total energy has similarities with that of the average moment of inertia. Received 6 February 2002 / Received in final form 11 April 2002 Published online 19 July 2002     

相量图解法在变配电故障分析中的应用

运用相量图解法，对几种不同情况的电路故障进行详细分析，得出各种电路故障下各相电压、电流的特征，提供一种简便直观的判断电路故障类型的方法。     

Detecting arrays and their optimality

Detecting arrays were proposed by Colbourn and McClary in 2008, which are of interest in generating software test suites to cover all t-sets of component interactions and detect interaction faults in component-based systems. So far, optimality and constructions of detecting arrays have not been studied systematically. Indeed, no useful benchmark to measure the optimality of detecting arrays has previously been given, and only some sporadic examples of optimal detecting arrays have been found. This paper tries to take the first step by presenting a lower bound on the size of detecting arrays and some methods of constructing optimal detecting arrays. A number of infinite series of optimal detecting arrays are then obtained.     

Effect of crystallinity of ZnO buffer layer on the properties of epitaxial (ZnO:Al)/(ZnO:Ga) bi-layer films deposited on c-sapphire substrate

Bi-layer ZnO films with 2 wt.% Al (AZO; ZnO:Al) and 4 wt.% Ga-doped (GZO; ZnO:Ga) were deposited on the ZnO buffered and annealed ZnO buffered c(0 0 0 1)-sapphire(Al₂O₃) substrates respectively by Pulsed Laser Deposition (PLD). The effect of crystallinity of ZnO buffer layer on the crystallinity and electrical properties of the AZO/GZO bi-layer thin films was investigated. It was seen that the crystallinity of ZnO buffer layer had a great influence on the orientation and defect density of AZO/GZO bi-layer thin films from X-ray Diffraction (XRD) peaks and High Resolution Transmission Electron Microscopy (HRTEM) images. In a word, it was found in the films that more preferred c-axis orientation texture and reduction of the defects such as stacking faults and dislocations, with increasing of the crystallinity of ZnO buffer layer.     

汽轮发电机定子内部故障的负序阻抗方向保护

现有的绝大多数汽轮发电机中性点侧只引出3个端子。通常装设的完全纵差保护只能反应相间短路故障,纵向基波零序过电压保护和故障分量负序方向保护等对匝间短路故障都存在较大的动作死区。为提高汽轮发电机匝间短路故障的保护动作率,通过分析机端等值负序阻抗在电机内部不对称故障和外部不对称情况下的不同规律,提出了基于相角范围的负序阻抗方向判据。在此基础上考虑到各种防误动措施,提出了一种新的发电机定子内部不对称故障保护方法——由负序电流启动的故障分量负序阻抗方向保护(Z2′)。运用"多回路分析法",对两台典型汽轮发电机所有可能发生的内部短路故障进行了仿真计算和灵敏度分析。结果表明,Z2′保护对定子内部不对称故障(尤其对内部匝间短路故障)的灵敏性和保护范围都优于现有的其他原理保护,能为只引出3个中性点的汽轮发电机提供高质量的保护。     

东辛地区营26断层变换带形成机制模拟

为了分析叠覆型断层变换带的形成机制,揭示变换带内断裂体系的发育规律,根据区域应力机制设计相应的张扭及底辟复合作用实验装置,从湿度不同的砂、黏土及砂泥混合物中选取微湿的细砂作为实验材料,并与应力场数值模拟相结合,对东营凹陷东辛地区营26变换带沙河街组沉积期进行构造物理模拟。结果表明:营1与营31断裂是沙河街组沉积前由NE10°的伸展作用同时形成的两条平行断裂,二者向两侧的伸展位移在叠覆带边缘诱导出一条与伸展方向呈50°斜交的张扭性变换断层,随着二者叠置程度的增大,变换断层的发育程度也增大。之后,区域性的右旋走滑运动形成一系列雁列式分布的变换断层,其优势走向与剪切应力场方向一致,后期的底辟作用加剧了断裂系统的复杂程度。断层的转折端、交汇和分叉处以及次级断层形成的局部小断块内,最大主应力和最小主应力差值较大,为低级序断层的优势发育区。另外,平面上斜交的剪切断层在不同方向的走滑活动造成的局部断块的掀斜运动加剧了低级序断层复杂程度。     

Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers

Abstract

Shockley-type stacking faults expanded in 4H–SiC epilayers induced by ultraviolet illumination were investigated using a photoluminescence imaging method, a photoluminescence mapping method and X-ray topography. After ultraviolet illumination, more than 30 patterns of Shockley-type stacking faults which expanded from perfect basal plane dislocations were observed by photoluminescence imaging. The initial basal plane dislocations were crystallographically classified, and individual shapes of expanded Shockley-type stacking faults were predicted. The correspondence between the predicted shapes and observed ones was discussed.