QY16汽车起重机主梁断裂失效分析

利用断裂力学理论和试手段对ＱＹ１６汽车起重机主梁断裂失效进行分析，找出断裂的主要原因为焊缝开裂。     

Pseudo-epitaxial C60 films prepared by a hot-wall method

We have used both reflection-geometry and grazing-incidence-geometry X-ray scattering to study thin films of C₆₀ evaporated onto mica substrates via a hot-wall technique. The growth mode yields close-packed C₆₀ planes, which are parallel to the substrate surface and which exhibit out-of-plane correlation lengths of 850 Å. In the film plane the C₆₀ is at best pseudo-epitaxial, with a 0.9° distribution of crystallite orientations, a 450 Å in-plane correlation length, and a 3.7% lattice mismatch, better than obtained by other thin film techniques but far from the accepted definition of single crystal thin film epitaxy.     

有限群的π′－闭性

将Ｅｎｇｅｌ条件进行了推广，利用（ｐ，ｑ）－子群的性质，得到了有限群为π′－闭的几个重要结果。     

Desargues定理的推广

本文将射影几何著名的Desargues透视三点形定理推广到四面体和三维射影空间的完全n(n≥4)点形(体)中。     

地下洞室形状优化设计

洞室开挖会使围岩周边产生应力集中 ,产生拉应力与压应力。围岩出现拉应力对洞室稳定十分不利 ,通常通过改变洞室形状和轴比来消除围岩中的拉应力。本文提出一种使洞室拉应力σθ=0 ,而压应力最小的确定洞室最优几何形状的方法。     

与半群的完全不可逆生成集相关的几个性质

讨论了半群环的两个性质以及关于半群的a.c.c.p.（主理想升链条件）的一个结论。     

关于Herstein定理的逆问题研究

设R是一个环,如果存在n>1使f:x→xn为R的一个环同态,则映射f:R→R称为一个幂自同态。本文将完全刻划出无零因子环的所有幂自同态。     

Diamagnetic susceptibility of hydrogenic donor impurity in low-dimensional semiconducting systems

The binding energies of a hydrogenic donor both in the parabolic and non-parabolic conduction band model within the effective mass approximation have been computed for the low-dimensional semiconducting systems (LDSS) like quantum well, quantum well wire and quantum dot taking GaAs/Al_xGa_1−xAs systems as an example. It is observed that the effect of non-parabolicity is not effective when the system goes to lower dimensionality. The diamagnetic susceptibility of a hydrogenic donor impurity has also been computed in these LDSS in the infinite barrier model. Since no theoretical or experimental works on the diamagnetic susceptibility of LDSS are available in the literature, as a realistic case the diamagnetic susceptibility has been computed in the finite barrier model (x=0.3) for a quantum well and the results are discussed in the light of semiconductor-metal transition.     

A rational approximation and its applications to nonlinear partial differential equations on the whole line

An orthogonal system of rational functions is discussed. Some inverse inequalities, imbedding inequalities and approximation results are obtained. Two model problems are considered. The stabilities and convergences of proposed rational spectral schemes and rational pseudospectral schemes are proved. The techniques used in this paper are also applicable to other problems on the whole line. Numerical results show the efficiency of this approach.