偏心因子数据的计算方法研究进展

从偏心因子(acentric factor)的定义出发，分析了ω数据的确定方法和获取数据的手段，评述了国内外ω计算方法的近期进展，包括对应态蒸气压关联方程法、对应态基团贡献法(CSGC)、图论法及拓扑法等，指出了各种方法的优缺点及最新的计算发展方向。     

一阶线性非齐次微分方程求解方法的讨论和一个简化的求解方法

本文证明了一阶线性非齐次微分方程y＇+P(x)·y=f(x)三个求解方法:参数变易法、积分公式、积分因子法之间的等同关系.从参数变易法中引出一个简化的积分公式.事实上此公式恰是对用参数变易法解高阶线性非齐次微分方程时对n=1的拓广.最后以实例验证此公式的简易.     

拟因子试验设计在生产中的应用

根据生产实际,综合利用并列、赋闲列和拟水平试验设计,运用多重比较进行方差分析,寻找水泥熟料的最佳工艺.不仅解决了不同水平多因素试验问题,同时还可考虑交互作用,大大减少了试验次数,从而提高经济效益.     

A Characterization of Graphs without Even Factors

In this paper, we first reduce the problem of finding a minimum parity (g,f)-factor of a graph G into the problem of finding a minimum perfect matching in a weighted simple graph G*. Using the structure of G*, a necessary and sufficient condition for the existence of an even factor is derived. This paper was accomplished while the second author was visiting the Center for Combinatorics, Nankai University. The research is supported by NSFC     

接触载荷作用下的表面裂纹分析

用边界积分方法分析了表面裂纹在接触载荷作用下的张开位移和应力强度因子，该方法将埋在无穷大弹性介质中裂纹模拟为连续分布的位错环，根据两个位错环之间的相互作用能可以得到弹性体的应变能，对弹性体的势能取极值，可以得到关于裂纹张开位移的边界积分方程，通过把半空间的边界模拟成一个包含在无穷大弹性介质中大裂纹，该方法能用已有的边界积分方法很好的处理具有任意表面形状的表面裂纹，文中算例分析了不同倾角的表面裂纹在法向和切向接触载荷作用下，裂纹尖端的应力强度因子，其结果对于分析路面表面裂纹的扩展具有重要意义。     

普通高校大学生英语学习焦虑和学习策略的调查研究

学习焦虑和学习策略是英语学习的两个重要因素,它们不仅影响学习者的英语学习,而且内部之间也相互影响。本研究以普通高校大学生为研究对象,调查了大学生的英语学习焦虑和英语学习策略使用情况,并分析了影响英语学习焦虑和英语学习策略使用的因素,以及英语学习焦虑和英语学习策略之间的关系。该研究结果对普通高校的大学英语教学具有实践指导意义。     

The crystal-like anatomical uniformity of the striate cortex

The visual field is topographically mapped onto the primary visual cortex (V1), forming a retinotopic map which is far more detailed for the foveal regions than for the periphery. We found that receptive field (RF) size in monkey V1 increases with eccentricity, and that a 1—2 m² V1 region contains roughly a complete set of machinery necessary to analyze a visual-field area whose size is about that of the RFs of the cells. This allows V1 to be anatomically uniform, and is in sharp contrast with the retina.     

Does the beam width affect the generalized M factor of hard-edged diffracted beams?

A detailed study of the generalized M² factor of hard-edged diffracted beams based on the truncated second-order moments method, asymptotic analysis and self-convergent beam width approach is performed. The dependence of the generalized M² factor on the parameters characterizing the spatial profile, and beam truncation, etc. is analyzed.     

On the role of the interface charge in non-ideal metal–semiconductor contacts

The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.