Probe‐assisted spin manipulation in one‐dimensional quantum dots

We study a spin structure that arises in a one‐dimensional quantum dot with zero total spin under the action of a charged tip of a scanning probe microscope in the presence of a weak magnetic field. The evolution of spin structure with changing the probe position is traced to show that the movable probe can be an effective tool to manipulate the spin. The spin structures are formed when the probe is located in certain regions along the dot due to Coulomb interaction of electrons as they are redistributed between the two sections in which the quantum dot is divided by the potential barrier created by the probe. There are two main states: spin‐polarized and non‐polarized ones. The transition between them is accompanied by a spin precession governed by the Rashba spin–orbit interaction induced by the electric field of the probe. In the transition region the spin density changes strongly while charge distribution remains nearly unchanged. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

(e, 2e) triple differential cross section for ionization-excitation of helium

Simultaneous ionization and excitation of helium by electron impact is considered in an improved second Born approximation. The wave function of the low energy ejected electron is obtained in the field of residual He⁺ ion in 2s-state. The calculation has been done for the processe ⁻+He→e ⁻+He⁺(2s)+e ⁻ in the coplanar asymmetric geometry with Hartree-Fock wave function of Byron and Joachain for the helium ground state and the results are compared with the absolute experimental data of Dupreet al [J. Phys. B25, 259 (1992)] at ∼ 5.5 keV incident energy. Our results are found to increase the ratio of the recoil peak to binary peak intensity by about 30% over the first Born results and thus to bring it closer to the experimental data.     

Molten salt flux synthesis and structure of the new layered uranyl tellurite, K4[(UO2)5(TeO3)2O5]

The reaction of UO₃ and TeO₃ with a KCl flux at 800 °C for 3 days yields single crystals of K₄[(UO₂)₅(TeO₃)₂O₅]. The structure of the title compound consists of layered, two-dimensional sheets arranged in a stair-like topology separated by potassium cations. Contained within these sheets are one-dimensional uranium oxide ribbons consisting of UO₇ pentagonal bipyramids and UO₆ tetragonal bipyramids. The ribbons are in turn linked by corner-sharing with trigonal pyramidal TeO₃ units to form sheets. The lone-pair of electrons from the TeO₃ groups are oriented in opposite directions with respect to one another on each side of the sheets rendering each individual sheet nonpolar. The potassium cations form contacts with nearby tellurite units and axial uranyl oxygen atoms. Crystallographic data (193 K, MoKα, ): triclinic, space group , , , , α=99.642(1)°, β=93.591(1)°, γ=100.506(1)°, , Z=1,R(F)=4.19% for 149 parameters and 2583 reflections with I>2σ(I).     

高能电子辐射下聚四氟乙烯深层充电特性

介质深层充放电现象是诱发航天器异常故障的重要因素之一.分析了高能电子辐射下介质内部电荷沉积、能量沉积特性和电导特性,考虑了真空与介质界面电荷对电场分布的影响,建立了介质二维深层充电的物理模型,并基于有限元方法实现了数值计算.计算了高能电子辐射下聚四氟乙烯的深层充电特性.结果表明:真空环境下,介质的表面存在较弱的反向电场,随着介质深度增大,电场减小至零,随后逐渐增大,最大值出现在靠近接地附近,但在接地点,电场存在小幅降低.分析了不同辐射时间下(1 h,1 d,10 d和30 d),介质内部最大电位和最大电场的时空演变特性.随着辐射时间的增加,最大电位由-128V增加至-7.9×104V,最大电场由2.83×105V·m-1增加至1.76×108V·m-1.讨论了入射电子束流密度对最大电场的影响,典型空间电子环境(1×10-10A·m-2)下,电子辐照10 d时,介质内部最大电场为2.95×106V·m-1.而恶劣空间电子环境(2×10-8A·m-2)下,电子辐射42 h,介质内部最大电场即达到108V·m-1,超过材料击穿阈值(约为108V·m-1),极易发生放电现象.该物理模型和数值方法可以作为航天器复杂部件多维电场仿真的研究基础.     

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(～6.2 V)is much larger than that due to full charged electrons(～1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.     

Insight into the π‐hole···π‐electrons tetrel bonds between F2ZO (Z = C,Si, Ge) and unsaturated hydrocarbons

The intermolecular π‐hole···π‐electrons interactions between F₂ZO (Z = C, Si, Ge) molecules and unsaturated hydrocarbons including acetylene, ethylene, 1,3‐butadiene and benzene were constructed to reveal the differences of tetrel bonds forming by carbon and heavier tetrel atoms. The ab initio computation in association with topological analysis of electron density, natural bond orbital, and energy decomposition analysis demonstrate that the strength of Si···π and Ge···π tetrel bonds is much stronger than that of C···π tetrel bonds. The Si···π and Ge···π tetrel bonds exhibit covalent or partially covalent interaction nature, while the weak C···π tetrel bonds display the hallmarks of noncovalent interaction, the electrostatic interaction is the primary influencing factor. The Si···π and Ge···π interactions are determined by both the σ‐ and π‐electron densities, while the C···π interactions are dominated mainly by the π‐electron densities. The π‐hole···π‐electrons tetrel bonds are dominated by electrostatic interaction, and polarization has a comparable contribution in the Si···π and Ge···π tetrel bonds.     

Characterization of relativistic electrons generated by a cone guiding laser pulse

We demonstrated the interaction of a gold cone target with a femto second(fs) laser pulse above the relativistic intensity of 1.37×10 18 μm 2 W/cm 2.Relativistic electrons with energy above 2 MeV were observed.A 25%-40% increase of the electron temperature is achieved compared to the case when a plane gold target is used.The electron temperature increase results from the guiding of the laser beam at the tip and the intense quasistatic magnetic field in the cone geometry.The behavior of the relativistic electrons is verified in our 2D-PIC simulations.     

等电子原理引入无机化学教学的体会与建议

总结了在无机化学教学过程中引入等电子原理提高教学效果的体会,建议在无机化学教材中引入等电子原理.     

Detection of coaxial backscattered electrons in SEM

We present a coaxial detection of the backscattered electrons in SEM. The lens-aperture has been used to filter in energy and focus the backscattered electrons. This particular geometry allows us to eliminate the low energy backscattered electrons and collect the backscattered electrons, which are backscattered close to the incident beam orientation. The main advantage of this geometry is adapted to topographic contrast attenuation and atomic number contrast enhancement. Thus this new SEM is very suitable to analyze the material composition. Foundation item: Supported by the National Natural Science Foundation of China (10045001) Biography: JIANG Chang-zhong (1962-), male, Ph. D, Associate professor.