Effect of laser irradiation of C-V characteristics of electrodeposited Ag/Tl-2223/CdSe hetero-nanostructures

One of the innovative technological directions for the high-temperature superconductors has been persued by fabricating the heteroepitaxial multilayer structures such as superconductor-semiconductor heterostructures. In the present investigation, metal/superconductor/semiconductor (Ag/Tl-2223/CdSe) hetero-nanostructures have successfully been fabricated using dc electrodeposition technique and were characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy (SEM) studies. The measurement of junction capacitance as a function of biasing voltage was used for the estimation of junction built-in-potential (V _D) and to study the charge distribution in a heterojunction. The Mott-Schottky plots were measured for each junction in dark and under the photo-irradiation. The effect of laser irradiation on C-V characteristics of hetero-nanostructure has been studied.     

界面势垒对碳纳米管场发射特性的影响

以界面势垒对碳纳米管(CNT)场发射的影响为研究目的,在硅衬底上引进很薄的二氧化硅层,以二氧化硅层作为绝缘势垒,然后在二氧化硅界面层上直接生长CNT,来研究二氧化硅绝缘势垒层对CNT场发射的影响。场发射结果为:Fowler-Nordheim(F-N)曲线分为两部分,高电场下偏离F-N曲线并趋于饱和。在双势垒模型的基础上,从电场在两势垒上的分布不同及电子在两势垒上的隧穿几率不同,理论上分析了界面势垒对场发射的影响:低电场下电子在界面势垒的隧穿几率大于在表面势垒的隧穿几率,界面势垒对场发射不起阻碍作用,场发射遵守F-N规律;高电场下电子在界面势垒的隧穿几率小于在表面势垒的隧穿几率,场发射偏离F-N规律。理论对实验结果进行了合理的解释。     

Magnetization reversal of microsized Fe elliptic rings

We report on the magnetization reversal of elliptic ring patterns lithographically prepared from Fe films. The elliptic rings in four different arrays are all of the same size , but their geometry is disturbed by introducing an increasing number of slits into the rings. The magnetization reversal is studied by regular longitudinal vector magneto-optical Kerr effect in specular geometry as well as in Bragg geometry, using the diffraction spots from the grating for hysteresis measurements. The measurements are compared with the results of micromagnetic simulation, which allow a detailed interpretation of the experimental data. We find that the remagnetization process in an external magnetic field is characterized by single-step switching or double switching depending on the geometry of the structure.     

A Non-Standard Coupling Between Quantum Systems Originated From Their Kinetic Energy

In standard quantum mechanics, the coupling between quantum systems is described by a potential interaction term in the Hamiltonian. This type of coupling is well-rooted in nature and shapes the universe around us, from the interactions between single photons to the attractive force between atoms that forms molecules. Quantum mechanics does not forbid other kinds of interactions to take place. In this paper, a non-standard quantum coupling between quantum systems is proposed, originated from the kinetic energy rather than the potential interaction in the Hamiltonian. Unlike the potential-based coupling, the proposed coupling changes the fundamental structure of quantum mechanics in the form of modified uncertainty relations that are shaped by the coupling between the particles in the system. Two prototypical examples of non-standard systems that perform such kinetic-based coupling are presented. In the first example, it considers a particle confined in a heterostructure, such as a quantum dot, where the coupling is between the particle and dynamic walls that determine the size of the heterostructure. The second example involves a particle in a 3D heterostructure with coupling between its position axes. It then discusses several future implications of the proposed type of non-standard coupling.     

A New Approach to Pricing Double-Barrier Options with Arbitrary Payoffs and Exponential Boundaries

Abstract

We consider in this article the arbitrage free pricing of double knock-out barrier options with payoffs that are arbitrary functions of the underlying asset, where we allow exponentially time-varying barrier levels in an otherwise standard Black–Scholes model. Our approach, reminiscent of the method of images of electromagnetics, considerably simplifies the derivation of analytical formulae for this class of exotics by reducing the pricing of any double-barrier problem to that of pricing a related European option. We illustrate the method by reproducing the well-known formulae of Kunitomo and Ikeda (1992 Kunitomo, N. and Ikeda, M. 1992. Pricing options with curved boundaries. Mathematical Finance, 2: 276–298.  [Google Scholar]) for the standard knock-out double-barrier call and put options. We give an explanation for the rapid rate of convergence of the doubly infinite sums for affine payoffs in the stock price, as encountered in the pricing of double-barrier call and put options first observed by Kunitomo and Ikeda (1992 Kunitomo, N. and Ikeda, M. 1992. Pricing options with curved boundaries. Mathematical Finance, 2: 276–298.  [Google Scholar]).     

Voltage control of millimeter-wave ferromagnetic resonance in multiferroic heterostructures thin films

Multiferroic heterostructures thin films, SrBi₂Ta₂O₉/BaFe₁₂O₁₉ (SBT/BaM), were grown on Pt/TiO₂/SiO₂/Si substrates by using magnetron sputtering and Sol-gel ways. X-ray diffractometer (XRD) analysis showed that only SBT and BaM phases appeared in the multiferroic heterostructures. Magnetic hysteresis loops revealed that the saturated magnetization was 3.7 kG and the M-H characteristics of SBT/BaM were not influenced by the presence of the SBT layer. Ferromagnetic resonance (FMR) measurement showed the lowest FMR linewidth of 205 Oe at 50 GHz. Additionally, when direct-current electric field was applied to SBT layer, as a result of which mechanical deformation of the ferromagnetic layer occurred that leads to a frequency shift in ferromagnetic resonance and the magnetoelectric coupling effect (α) is 1.8 MHz*cm/kV. Our findings indicate that these SBT/BaM thin films have a significant potential for the usage in millimeter wave tunable devices.