Formation of Fe i –B pairs in silicon at high temperatures

We report on the detection of Fe _i –B pairs in heavily B doped silicon using ⁵⁷Fe emission Mössbauer spectroscopy following implantation of radioactive ⁵⁷Mn⁺ parent ions (T _1/2?=?1.5 min) at elevated temperatures >?850 K. The Fe _i –B pairs are formed upon the dissociation of Fe _i –V pairs during the lifetime of the Mössbauer state (T _1/2?=?100 ns). The resulting free interstitial Fe_i diffuses over sufficiently large distances during the lifetime of the Mössbauer state to encounter a substitutional B impurity atom, forming Fe _i –B pairs, which are stable up to ～1,050 K on that time scale.     

K2O-ZnO-Al2O3-B2O3-SiO2系掺Cr3+透明莫来石微晶玻璃的研究

采用了X射线衍射、透射电镜和吸收光谱及荧光光谱技术研究了K2O－ZnO-Al2O3-B2O3－SiO2系掺Cr^3 玻璃的析晶性能和光谱。研究结果表明：在K2O－Al2O3-B2O3-SiO2系掺Cr^3 玻璃的基础上引入ZnO后，析晶性能明显改善；析晶温度降低，析出的纳米莫来石微晶均匀、规则；微晶玻璃的发光强度明显增强。     

受激喇曼散射在掺铒光纤放大器中的影响

本文在分析了均匀掺杂分布式光纤放大器（d－EDFA）的基础上，提出了沿传输方向掺杂浓度单调下降（单变），和降升结合（两变）的两种渐变型分布式光纤放大器，并用传输方程研究了透明传输和最佳掺杂浓度下，受激喇曼散射对均匀、单变和两变型三种d－EDFA的各种特性的影响．     

孤子掺杂光纤放大的半径典模型与分析

建立了孤子掺杂光纤放大的半经典模型，给出了分布放大透明传输的泵浦条件，详细讨论了激发态吸收的影响．文中结果为Ｅｒ￣３＋掺杂光纤孤子放大器的设计提供了重要理论依据．     

Rare Earth Doped Polymer Waveguide Materials and Devices

1 Results Rare earth doped waveguide amplifiers and devices have been demonstrated in silica, crystal and other glass hosts. These rare earth doped optical waveguide devices are based on inorganic materials. Many processing steps are required and can lead to long fabrication time and low yield.Polymer materials offer many distinct properties compared to inorganic materials, such as ease of fabrication, low production costs, simple processing steps, and compatibility with micro-fabrication technologies. ...     

Structure induced by irradiation of femtosecond laser pulse in dyed polymeric materials

We investigated the structures induced by an irradiation of a near‐infrared (NIR) femtosecond laser pulse in dye‐doped polymeric materials {poly(methyl methacrylate) (PMMA), thermoplastic epoxy resin (Epoxy), and a block copolymer of methyl methacrylate and ethyl acrylate‐butyl acrylate [p(MMA/EA‐BA) block copolymer]}. Dyes used were classified into two types—type 1 with absorption at 400 nm and type 2 with no absorption at 400 nm. The 400‐nm wavelength corresponds to the two‐photon absorption region by the irradiated NIR laser pulse at 800 nm. Type 1 dye‐doped PMMA and p(MMA/EA‐BA) block copolymer showed a peculiar dye additive effect for the structures induced by the line irradiation of a NIR femtosecond laser pulse. On the contrary, dye‐doped Epoxy did not exhibit a dye additive effect. The different results among PMMA, p(MMA/EA‐BA) block copolymer, and Epoxy matrix polymers are supposed to be related to the difference of electron‐acceptor properties. The mechanism of this type 1 dye‐additive‐effect phenomenon for PMMA and p(MMA/EA‐BA) block copolymer is discussed on the basis of two‐photon absorption of type 1 dye at 400 nm by the irradiation of a femtosecond laser pulse with 800 nm wavelength and the dissipation of the absorbed energy to the polymer matrix among various transition processes. Dyes with a low‐fluorescence quantum yield favored the formation of thicker grating structures. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 2800–2806, 2002     

Effect of Ga doping on magneto-transport properties in colossal magnetoresistive La0.7Ca0.3Mn1−xGaxO3 (0<x<0.1)

Samples of La_0.7Ca_0.3Mn_1−xGa_xO₃ with x=0, 0.025, 0.05 and 0.10 were prepared by standard solid-state reaction. They were first characterized chemically, including the microstructure. The magnetic properties and various transport properties, i.e. the electrical resistivity, magnetoresistivity (for a field below 8 T), thermoelectric power and thermal conductivity measured each time on the same sample, are reported. The markedly different behaviour of the x=0.1 sample from those with a smaller Ga content, is discussed. The dilution of the Mn³⁺/Mn⁴⁺ interactions with Ga doping considerably reduces the ferromagnetic double exchange interaction within the manganese lattice leading to a decrease of the Curie temperature. The polaron binding energy varies from 224 to 243 meV with increased Ga doping.     

Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.     

Influence of Temperature and Time on the Stability of Silver in Silica Sol-Gel Glasses

The darkening of silica sol-gel glasses doped with 0.05 mol% silver was studied. Six sols were prepared from TEOS and silver nitrate. Different additives were used, to influence the chemical and physical states of silver: oxidizing or reducing agents (H₂O₂, As₂O₅), colloid stabilizer (sodium citrate) and network modifiers (Li₂O, CaO). Sols were gelified at 60°C and densified at 600°C. The samples without additives and those prepared with H₂O₂ at room temperature even if they were protected from light. With increased temperature, the darkening became samples were heated above, 400°C, reversible bleaching took place. This darkening-bleaching is of thermal nature (“thermochromic effect”) and seems to be determined by a reversible aggregation-disaggregation of tiny silver particles. The presence of sodium citrate, as an additive delayed the darkening effect and the presence of CaO delayed it even further. Lithium oxide inhibited it totally.     

Anodic Stripping Voltammetry of Heavy Metals at Nanocrystalline Boron‐Doped Diamond Electrode

Boron‐doped Diamond (BDD) electrode has become one of the important tools for heavy metal detection. By studying some analytical parameters of DPASV method, like deposition time and potential in different electrolyte concentrations (acetate buffer), the conditions for detecting very low metal ion levels (Zn, Cd, Pb, and Cu) could be chosen. Diluted electrolyte (0.01 M buffer) was one of the factors favoring low detection and quantification limits, but its quantification range is short in comparison to more concentrated media. For ?1.7 V deposition potential, the detection of single metal at ppb levels was reached in 60 s deposition time. Understanding different metal‐metal interactions shows the limits to the simultaneous determination of heavy metals at BDD. Quantification was possible for the simultaneous determination of Zn, Cd and Pb despite the overlapping of Zn and Cd peaks. The performance of the BDD was compared with that of another C‐based solid electrode: the glassy carbon electrode (without mercury plating). A lower base line current, wider potential range, higher sensitivity (3 to 5 times higher than GC) and longevity of the material were noticed for the BDD.