用反向调制照明法分析光栅成像效应

提出了用反向调制照法明分析光栅成像效应的观点，研究了光栅系统的反向衍射干涉效应，成功地揭示了泰伯效应与劳效应的内在联系，并在白光双光栅衍射干涉的“消色效应”的基础上获得了白光扩展光源照明下白光光栅成像效应和具有实用意义的四光栅干涉系统。     

炭黑／结晶性含氟树脂合金在自控温加热电缆中应用

选择了结晶性含氟树脂添加改性剂为树脂基体，与炭黑制居复合导电体系。通过这个对体系不同条件下ＰＴＣ特性的研究，对其配方与加工工艺进行优化。并利用扫描电镜，Ｘ射线衍射，ＤＳＣ等分析测试手段，对体系的各种开矿结构进行了研究，阐明了该导电复合体系的形态结构与性能的关系。     

The Squeezing Effect in a Mesoscopic RLC Circuit

Using the path integral method we derive quantum wave function and quantum fluctuations of charge andcurrent in the mesoscopic RLC circuit. We find that the quantum fluctuation of charge decreases with time, oppositely,the quantum fluctuation of current increases with time monotonously. Therefore there is a squeezing effect in the circuit.If some more charge devices are used in the mesoscopic-damped circuit, the quantum noise can be reduced. We also findthat uncertainty relation of charge and current periodically varies with the period π/2 in the under-damped case.     

一种锰铜压阻测量新方法

 简单分析了几种常用的恒流供电锰铜压阻测量方法，并对这些测试方法的特点和不足进行了讨论。最后介绍一种利用数字示波器进行高保真高精度测量的方法，利用此法不仅提高了压力测量的精度，并且把小阻值锰铜压力计的测量范围向低端扩展到0.17 GPa。     

绝缘栅PMOS的SUPREM—SEDAN联机模拟研究

本文分析及研究了作者对绝缘栅ＰＭＯＳ场效应结构所进行的ＳＵＰＲＥＭ—ＳＥＤＡＮ联机模拟．重点在衬底电阻率（掺杂浓度）与ＭＯＳ结构阈值电压之间的定量关系上得到了与实验完全一致的结果．同时，定量地描述了栅氧层中电离电荷的分布及其行为．揭示了上述效应的机理．     

掺杂离子导体的粒子交叠广义晶格模型及其电导的粒子尺度效应

提出了一种掺杂离子导体（ＤＩＣ）的粒子交叠广义晶格模型，由此模型，推导随机－电阻－网络（ＲＲＮ）理论中３种导电键各自组分的几率，并采用有效介质近似（ＥＭＡ）计算了ＤＩＣ系统的电导及其粒子尺度效应。     

Effect of oxygen exposure on the magnetic properties of ultrathin Co/Ge(1 1 1) films

Influences of oxygen exposure on the magnetic properties of Co/Ge(1 1 1) ultrathin films have been investigated by surface magneto-optic Kerr effect technique. As the oxygen exposure increases on Co/Ge(1 1 1) films, their magnetic properties could be modified. As an example for 15 ML Co/Ge(1 1 1) films, the coercivity increases from 730 to 920 Oe and the remanence Kerr intensity is reduced for 500 Langmuir (L) of oxygen exposure. Corresponding compositions analyzed by Auger electron spectroscopy measurement shows that the amount of oxygen on the surface layers increases with increasing the oxygen exposure time. Oxygen distributes on the topmost layers of the film. The adsorbed oxygen influences the electronic density of states of Co and results in the changes of the magnetic properties. Besides, the appearance of O/Co/Ge interface could modify the stress anisotropy, and as a result the coercivity of ultrathin Co/Ge(1 1 1) film is enhanced.     

Stability control of the electrooptic effect with new maleimide copolymers containing photoreactive tricyanopyrrolidene‐based chromophores

New photocrosslinkable maleimide copolymers have been synthesized by the attachment of a tricyanopyrrolidene‐based chromophore. The 2‐(3‐cyano‐4‐(2‐{4‐[hexyl‐(6‐hydroxy‐hexyl)‐amino]‐phenyl}‐vinyl)‐5‐oxo‐1‐{4‐[4‐(3‐oxo‐3‐phenyl‐propenyl)‐ phenoxy]‐butyl}‐1,5‐dihydro‐pyrrol‐2‐ylidene)‐malononitrile chromophore exhibits nonlinear optical activity and contains a chalcone moiety that is sensitive to UV light (λ = 330–360 nm) for crosslink formation. The maleimide monomers have also been functionalized with chalcone moieties. The resultant copolymers exhibit great processability, and one of them shows a maximum electrooptic coefficient of 90 pm/V at 1300 nm. We could control the thermal stability of the electrooptic coefficient with the newly synthesized photoreactive copolymers successfully. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 531–542, 2007     

Andreev-Fano Effect in a Hybrid Normal-Metal/Superconductor Interferometer

We report on a new type of Fano effect, named as Andreev-Fano effect, in a hybrid normal-metal/supeeconductor (N/S) interferometer embedded with a quantum dot. Compared with the conventional Fano effect, AndreevFano effect has some new features related to the characteristics of Andreev reflection. In the Iinear response regime, the line shape is the square of the conventional Fano shape, while in the nonlinear transport, a sharp resonant structure is superposed on an expanded interference pattern, which is qualitatively different from the conventional Fano effect. The phase dependence of the hybrid N/S interferometer is also distinguished from those of all-N or all-S interferometers.