吐鲁番拗陷中生界砂岩成岩演化及孔隙特征

通过常规薄片、铸体薄片、扫描电镜及ｘ－衍射等观察和分析，研究了吐鲁番拗陷中生界砂岩成岩演化及孔隙发育特征。结果表明，压实作用、胶结作用是砂岩孔隙减少的主要因素；溶蚀作用是产生次生孔隙的主要来源；砂岩成岩演化及孔隙发育程度主要受沉积作用和成岩作用控制．     

高场强下聚酰亚胺薄膜电导的研究

本文研究了聚酰亚胺薄膜(PI)在不同温度、厚度下的电压电流特性,以及热刺激去极化电流(TSDC)与极化电压的关系。由实验结果表明:聚酰亚胺的电导与电极限制电流有关,电流密度与电场的关系接近于肖特基效应;热刺激电流峰是由电极注入陷阱的电子热释放形成的。     

成岩圈闭油藏中含油饱和度分布的预测方法

本文根据马岭油田南一试验区延10成岩圈闭油藏特点,利用古构造分析法,拟合油藏自由水界面的位置,确定出自由水界面以上储层高程与含油(水)饱和度的关系曲残,预测出饱和度的分布状况,在生产实际中获得较好的效果。     

用DLTS技术研究MNOS结构界面陷阱

提出利用深能级瞬态谱技术ＭＮＯＳ结构中界面陷阱的分布，阐述了并建立了ＭＮＯＳ结构ＤＬＴＳ存储峰和界面态峰的解析理论，并给出区分这两个谱峰的实验方法，并研制的ＭＯＮＳ结构进行的ＤＬＴＳ描述了理论结果，所获得的存储陷阱和界面态的分布规律与应用热少许电流谱和保留特性方法交     

n型金属氧化物半导体场效应晶体管噪声非高斯性研究

基于n型金属氧化物半导体场效应晶体管（nMOSFET）噪声的数涨落模型,采用高阶统计量双相干系数平方和研究了nMOSFET噪声的非高斯性.通过对nMOSFET实际测试噪声的分析,发现nMOSFET器件噪声存在非高斯性;小尺寸器件噪声的非高斯性强于大尺寸器件;在器件的强反型线性区,其非高斯性随着漏压的增加而增加.文中还通过蒙特卡罗模拟和中心极限定理理论对nMOSFET噪声的非高斯性作了深入的探讨. 关键词： 噪声 非高斯性 n型金属氧化物半导体场效应晶体管 氧化层陷阱     

东营凹陷南斜坡东部地区沙四段储层成岩作用研究

东营凹陷南斜坡东部地区沙四段储层岩性主要有砂砾岩、砾状砂岩、砂岩和粉砂岩,砂岩类型以岩屑长石砂岩为主,长石砂岩和长石岩屑砂岩次之.成岩矿物类型主要有粘土矿物、石英、长石、碳酸盐、黄铁矿等,其中粘土矿物有高岭石、伊利石、绿泥石、伊-蒙混层.储层成岩演化阶段处于晚成岩A1亚期,油气注入时间为7.5～25 Ma前.砂岩储层成岩相划分为三种类型:压实成岩相、碳酸盐胶结成岩相和不稳定碎屑溶蚀成岩相.储层性质明显地受到成岩相的控制,水下辫状河道砂体是油气储集的主要场所.     

和田河气田奥陶系碳酸盐岩成岩作用及孔隙演化

奥陶系碳酸盐岩储层是塔里木盆地和田河气田的主要产层 ,受成岩作用的改造非常强烈。通过对岩心、普通薄片、铸体薄片、阴极发光、碳氧同位素、微量元素和流体包裹体等多种资料进行综合研究 ,详细阐述了主要成岩作用的形成机理及其产物 ,分析了其对储层的影响和成岩序列。胶结作用和压实作用是原生孔隙和部分次生孔隙的主要破坏者 ;溶蚀 (岩溶 )作用、压溶作用、破裂作用和白云石化作用是次生孔隙的主要建造者 ,它们产生的溶孔、溶洞和裂缝是天然气的主要储集空间和运移通道。成岩作用是该储层物性的主要控制因素 ,它控制了孔隙的演化过程。     

卤化银乳剂制备中的新型掺杂剂

本文综述了近年来乳剂制备中常用的新型掺杂剂,较详细地介绍了两种能提高光电子利用效率的掺杂剂,即过渡金属络合物浅电子陷阱掺杂剂和羧酸盐(酯)有机空穴陷阱掺杂剂,总结了掺杂剂的选择原则,并举例说明了掺杂剂对乳剂感光度的影响.     

The energy distribution of an ion in a radiofrequency trap interacting with a nonuniform neutral buffer gas

An ion in a radiofrequency (rf) trap sympathetically cooled by a simultaneously trapped neutral buffer gas exhibits deviations from thermal statistics caused by collision-induced coupling of the rf field to the ion motion. For a uniform density distribution of the buffer gas, the energy distribution of the ion can be described by Tsallis statistics. Moreover, runaway heating of the ion occurs if the buffer gas particles are sufficiently heavy relative to the ion. In typical experiments, however, ultracold buffer gases are confined in traps resulting in localised, non-uniform density distributions. Using a superstatistical approach, we develop an analytical model for an ion interacting with a localised buffer gas. We demonstrate theoretically that limiting collisions to the centre of the ion trap enables cooling at far greater mass ratios than achievable using a uniform buffer gas, but that an upper limit to the usable mass ratio exists even in this case. Furthermore, we analytically derive the functional form of the energy distribution for an ion interacting with a buffer gas held in a harmonic potential. The analytical distribution obtained is found to be in excellent agreement with the results of numerical simulations.     

High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated by employing SiN passivation, this paper investigates the degradation due to the high-electric-field stress. After the stress, a recoverable degradation has been found, consisting of the decrease of saturation drain current I_Dsat, maximal transconductance g_m, and the positive shift of threshold voltage V_TH at high drain-source voltage V_DS. The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer. The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress. After the hot carrier stress with V_DS=20 V and V_GS=0 V applied to the device for 10⁴ sec, the SiN passivation decreases the stress-induced degradation of I_Dsat from 36% to 30%. Both on-state and pulse-state stresses produce comparative decrease of I_Dsat, which shows that although the passivation is effective in suppressing electron trapping in surface states, it does not protect the device from high-electric-field degradation in nature. So passivation in conjunction with other technological solutions like cap layer, prepassivation surface treatments, or field-plate gate to weaken high-electric-field degradation should be adopted.