Planar ion chip design for scalable quantum information processing

We investigate a planar ion chip design with a two-dimensional array of linear ion traps for scalable quantum information processing. Qubits are formed from the internal electronic states of trapped ^40Ca^＋ ions. The segmented electrodes reside in a single plane on a substrate and a grounded metal plate separately, a combination of appropriate rf and DC potentials is applied to them for stable ion confinement. Every two adjacent electrodes can generate a linear ion trap in and between the electrodes above the chip at a distance dependent on the geometrical scale and other considerations. The potential distributions are calculated by using a static electric field qualitatively. This architecture provides a conceptually simple avenue to achieving the microfabrication and large-scale quantum computation based on the arrays of trapped ions.     

外势场中玻色--爱因斯坦凝聚性质的研究

(1)简要介绍BEC概念的一种含义及BEC形成的条件；(2)着重对外势场中的BEC作了研究，得出了低维情况下产生BEC的条件：当U(x)-2^η时，一维情况发生BEC满足η＜2；二维情况发生BEC满足η＞0。     

蜀南地区上三叠统须家河组成岩相划分

蜀南地区须家河组储层物性的好坏受成岩作用的控制,研究成岩相及其展布规律,能有效地预测有利储层发育带,为油气勘探提供地质依据。根据控制沉积物孔隙形成与演化的成岩作用,将蜀南地区须家河组储层划分为五种成岩相,即浅埋藏强压实相、浅中埋藏钙质胶结相、中埋藏绿泥石胶结相、中深埋藏硅质胶结相和深埋藏溶蚀 高岭石胶结相。各种成岩相的形成和分布与沉积物的原始组分密切相关。各成岩相之间储层物性差别大,它们的不同组合可形成成岩圈闭。在蜀南地区的中部（川中—川南过渡带）有形成成岩圈闭的条件,因而在该地区进行油气勘探应不局限于构造圈闭。     

藏北羌塘盆地中上侏罗统碎屑岩储层成岩演化特征

运用分析化验、储层测试等多种资料 ,对羌塘盆地中上侏罗统碎屑岩储层的成岩演化特征进行了研究。将中上侏罗统地层划分为晚成岩期A亚期、B亚期和C亚期 3个成岩阶段 ,识别出压实作用、压溶作用、胶结作用、交代作用、次生溶蚀作用、重结晶作用、沥青充填作用和破裂作用等 7种成岩作用 ,以及机械压实成岩相、碳酸盐胶结成岩相、强压实压溶成岩相、不稳定组分溶解溶蚀成岩相和沥青充填成岩相等 5种成岩相类型。探讨了各种成岩相的岩性、物性等微观特征及其与沉积相类型之间的关系 ,总结出 3种成岩演化序列。分析结果表明 ,不同成岩作用类型对储层物性的影响不同 ,次生溶蚀作用、破裂作用使物性变好 ;压实作用、压溶作用和沥青充填作用使物性变差 ;胶结作用具有双重影响     

西部凹陷北部沙河街组成岩作用及成岩相研究

根据砂岩薄片、铸体薄片、扫描电镜、X-衍射分析,对辽河断陷西部凹陷北部沙河街组碎屑岩储层的成岩演化特征进行了研究。将沙河街组地层划分为早成岩A亚期、B亚期和中成岩A亚期     

Fundamental weak interaction studies using polarised nuclei and ion traps

Two experiments to search for new physics beyond the standard model for electroweak interactions by measuring correlations between different spin and momentum vectors in nuclear β-decay are discussed. In the first experiment the correlation between the emission asymmetry and the longitudinal polarisation of positrons emitted by polarised nuclei is determined. This type of measurement is sensitive to the presence of right-handed currents but also to possible scalar and tensor-type currents in the weak interaction. The aim of the second experiment is to determine the βν-correlation in β-decay by measuring the energy spectrum of the recoil ions, using a Penning trap and a retardation spectrometer. In this case the focus is on the search for scalar currents in the weak interaction. The results of the experiments presented here are complementary to results from experiments in muon decay and at high-energy colliders. This revised version was published online in July 2006 with corrections to the Cover Date.     

Thermoactivated spectroscopy of heterovalent impurity traps in CdWO4

Abstract

Recombination luminescence emission spectra, TSL and trap spectra estimated by fractional glow technique (FGT), in nominally pure and Li-, Bi- and Ho-doped CdWO₄, crystals are reported. According to the investigations by FGT heterovalent impurities Li, Bi and Ho causes localized electronic states which act as traps for charge carriers. It is shown that TSL results in emission of known blue-green luminescence band by emptying of the Li⁺-related traps in CdWO₄-Li and yellow luminescence band by emptying of the Bi³⁺-related traps in CdWO₄-Bi. It is proposed that blue-green and yellow luminescence occur by recombination correspondingly of free holes and free electrons at different intrinsic tungstate group related luminescence centers.     

Effect of 100 MeV Si7+ ions’ irradiation on Pd/n-GaAs Schottky diodes

Pd/n-GaAs realized devices (junction made on a virgin substrate prior to irradiation) and Pd/n-GaAs fabricated devices (junction realized after the virgin substrate irradiation) have been irradiated with 100?MeV Si⁷⁺ ions for the varying fluence of 10¹²–10^13?ions/cm². The devices have been characterized by I–V and C–V techniques for an electrical response. The electrical characterization of these devices shows the presence of interfacial layer. Moreover, the C–V characteristics show strong frequency dependence behavior, which indicates the involvement of interfacial charge layer with deep electron states. The hydrogenation of these devices has not caused any significant change in the electrical (I–V and C–V) characteristics. The observed results have been discussed in the realm of radiation-induced defects, which cause the carrier removal and compensation phenomena to cause the observed high resistivity and filling and unfilling of these traps’ level to cause strong frequency dependence behavior.     

Basic thermoluminescent and dosimetric properties of Al2O3:C irradiated by pulse intensive electron beam

The effect of deep traps filled by a pulse electron beam on the thermoluminescent (TL) properties in Al₂O₃:C dosimetric crystals is studied. When the deep traps are filled, the dosimetric peak at 170 °C acquires a double-peak structure not present in the initial samples. The effect of the population of the deep centers having various nature (electron or hole traps) and energy depth on the shape of the dosimetric TL peak structure is analyzed. An assumption is made that in the temperature ranges of 350–500 °C and 650–750 °C, electron traps are emptied, whereas at T = 500–650 °C hole traps are emptied. The possibility of using the TL associated with deep traps in high-dose dosimetry of pulse electron beams is shown.