The formation of stars

We review the process of star formation, detailing the theories underlying the stability of molecular clouds and their collapse to protostars, and discussing the empirical evidence and models which inform them. We give emphasis to the role that the magnetic field plays in influencing the stability of molecular clouds and hence the star formation rate. The end result of star formation is a mass function which appears constant within our Galaxy. A relative abundance of low mass stars is observed over high mass stars and most of the stars that do form are found to exist as members of a binary system. The origin of binarity is reviewed as is the discovery, formation and observations of some of the lowest mass stars known, the brown dwarfs.     

Spectral probing of carrier traps in Si–Ge alloy nanocrystals

Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si_0.2Ge_0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO₂ host with the ionization energy of about 1 eV, are characterized by a long‐range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Charge transport in anodic TiO2 nanotubes studied by terahertz spectroscopy

We report on the photoelectrochemical and terahertz measurements, of the charge transport properties of 1 μm thick self‐organized TiO₂ nanotube layers, prepared by the anodization of titanium. We provide evidence regarding the complexity of electron transport, and dynamics in the nanotubes. Shortly after photoexcitation, charge mobilites in amorphous and crystalline nanotubes are similar, but still lower compared to the bulk anatase. The mobility subsequently decreases due to trapping‐detrapping processes. The recombination rate in anatase nanotubes is much slower than in the amorphous ones, enabling the material to reach an internal photon to electron conversion efficiency exceeding 60%.     

Direct detection of carrier traps in Si solar cells after light‐induced degradation

In solar cells fabricated from boron‐doped Cz‐Si wafers minority and majority carrier traps were detected by deep level transient spectroscopy (DLTS) after so‐called “light‐induced degradation” (LID). The DLTS signals were detected from mesa‐diodes with the full structure of the solar cells preserved. Preliminary results indicate metastable traps with energy levels positioned at E_V + 0.37 eV and E_C – 0.41 eV and apparent carrier capture cross‐sections in the 10^–17–10^–18 cm² range. The concentration of the traps was in the range of 10¹²–10¹³ cm^–3. The traps were eliminated by annealing of the mesa‐diodes at 200 °C. No traps were detected in Ga‐doped solar cells after the LID procedure or below the light protected bus bar locations in B‐doped cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(～6.2 V)is much larger than that due to full charged electrons(～1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.     

溅射金膜对氧化铝陶瓷纳秒脉冲真空沿面闪络的影响

研究了溅射金膜对氧化铝陶瓷在真空环境中、纳秒脉冲高电压作用下沿面闪络特性的影响规律.通过对氧化铝陶瓷表面粗糙度、电极接触形式的研究,并结合表面态陷阱、界面能带结构、电荷注入过程的分析,探究了影响氧化铝陶瓷溅射金膜后沿面闪络电压的主要原因.在50 ns/1.2μs脉冲下、电极间距10 mm时,测量各试样的闪络电压60次,取后30次平均值作为稳定的闪络电压.研究结果发现,氧化铝陶瓷在溅射金膜电极试样的闪络电压比直接压接电极试样的闪络电压低,这是因为在不同电极接触方式下,氧化铝陶瓷材料的表面态对真空中的电子发射和材料表层的电荷注入的影响不同所致.     

新立地区嫩三段储层特征及其成岩作用

在岩心描述的基础上,利用薄片观察、阴极发光、扫描电镜、X射线衍射等分析化验资料,研究了新立地区嫩三段储层岩石学特征、储集空间类型、喉道类型,分析了该区嫩三段的成岩作用及沉积微相对储条物性的影响,进而探讨了成岩阶段的划分.研究区储层孔隙类型以粒间原生孔为主,其次为粒间溶孔;有效储层以高中孔-较细喉中喉、较高配位数结构储层为主,微观孔隙结构直接决定储层物性优劣.沉积微相是影响研究区储层物性发育的主控因素,水下分流河道微相控制着储层有效砂体的展布.确定了该区嫩三段目前处于早成岩B阶段,建立了该区的成岩演化序列;阐明了研究区成岩作用较弱以及各种成岩作用对物性的影响.     

Ion-trap quantum information processing:experimental status

Atomic ions trapped in ultra-high vacuum form an especially well-understood and useful physical system for quantum information processing. They provide excellent shielding of quantum information from environmental noise, while strong, well-controlled laser interactions readily provide quantum logic gates. A number of basic quantum information protocols have been demonstrated with trapped ions. Much current work aims at the construction of large-scale ion-trap quantum computers using complex microfabricated trap arrays. Several groups are also actively pursuing quantum interfacing of trapped ions with photons.      

苏里格庙地区盒8段高渗储层成岩相研究

针对苏里格庙地区盒8段砂岩强烈的成岩作用是造成储层非均质性强的主要原因，不同的沉积微相其胶结类型不同，从而导致酸性水溶蚀次生孔隙发育的程度迥异。通过沉积微相分析以及大量岩石显微薄片的观察，总结出7种苏里格庙地区中二叠统石盒子组盒8段砂岩储层成岩相，并分析了5种沉积充填类型（序列）与成岩相的关系。总结出高渗储层发育的有利成岩相带为净砂岩溶蚀相和净砂岩弱压实弱胶结成岩相，它们主要发育在辫状河心滩和三角洲平原分流河道微相中。根据沉积相展布及成岩相发育规律，对苏里格庙及其外围地区的高渗储集层发育带进行了预测。