面向同源蛋白质探测的一种新型混合深度学习模型

根据蛋白质氨基酸链探测其同源蛋白质,进而预测蛋白质的功能,是生物信息学研究领域的一个重要挑战,也是众多生物医学研究领域的基础研究内容,有着重要的科研价值和广泛的应用需求。其研究难点在于:(1)如何学习对同源蛋白质预测有效、有用的蛋白质特征信息;(2)如何更好地运用蛋白质特征信息,实现同源蛋白质的探测与识别。为了解决同源蛋白质探测与识别研究中的关键难点,本文提出一种基于混合深度学习架构的同源蛋白质探测与识别模型(HDLM-PHP)。通过采用统一的"管道式"深度学习架构,将蛋白质特征学习和探测识别统一为一个整体,提高同源蛋白质探测与识别的效能。采用多组并行的深度卷积神经网络,学习蛋白质的各种属性信息,以期获得丰富的待检测蛋白质和靶蛋白质的高级相关性特征,并通过全连接方式使用多层RBM结构融合和精炼这些相关性特征为全局相关性特征。通过统一的深度网络连接方式,以探测和识别任务为导向,学习到对于同源蛋白质预测最有效、最全面的蛋白质特征信息。在标准数据集SCOPe上,对所提模型进行性能与效率评测,结果表明:本文提出的模型能有效地学习到符合任务导向的蛋白质特征数据,提升同源蛋白质探测与识别的准确度和召回率,优于现有的模型和算法。     

回采过断层采用深孔爆破技术的研究

介绍了3807回采工作面的地质构造情况,论述了采用深孔爆破技术解决回采工作面过断层的工艺,指出该工艺技术对于生产条件较差、岩石较多的回采工作面提高单产具有很好的借鉴作用。     

紧邻地铁站的超大深基坑逆作法变形规律研究

某超大深基坑紧邻城市2条地铁线交汇处的换乘站,周围环境复杂,基坑施工难度大,因此基坑支护结构施工顺利及对相邻地铁站的变形控制成为工程成败的关键。文章结合基坑工程2种施工方案,利用有限元软件MIDAS GTS建立三维有限元模型,研究了基坑盖挖逆作法施工对地表沉降、支护结构和相邻地铁站的变形和受力影响,得出影响逆作法施工的相关因素,并提出相关解决措施与建议。采用盖挖逆作法施工能够较好地控制基坑支护结构的变形,同时减小对地表和地铁站的影响。综合考虑基坑施工对围护结构、地表和地铁换乘站的影响,首层土体暗挖法要优于明挖法,但是暗挖法对围护结构强度和刚度要求高,特别是楼板临时洞口处。所得相关结论和建议可供设计和施工参考。     

量子阱层和垒层具有不同Al组分的270/290/330nm AlGaN基深紫外LED光电性能

为了研究AlGaN量子阱层和垒层中Al组分不同对AlGaN基深紫外发光二极管(LED)光电性能的影响,本文利用MOCVD生长、光刻和干法刻蚀工艺制备了AlGaN量子阱层和垒层具有不同Al组分的270/290/330nm深紫外LED,通过实验和数值模拟计算方法发现,量子阱层和垒层中具有低Al组分紫外LED的AlGaN材料具有较低的位错密度、较高的光输出功率和外量子效率。通过电流-电压(I-V)曲线拟合出的较大的理想因子(3.5)和能带结构图表明,AlGaN深紫外LED的电流产生是隧穿机制占据主导作用,这是因为高Al组分AlGaN量子阱中强极化场造成了有源层区域较大的能带弯曲和电势降。     

Characteristic behaviour of plasma fluctuations inside a plasma bubble in presence of a magnetic field due to the formation of a potential well

Experiments were carried out to observe the effect of a magnetic field and grid biasing voltage in presence of a plasma bubble in a magnetized, filamentary discharge plasma system. A spherical mesh grid of 80% optical transparency was negatively biased and introduced into the plasma for creating a plasma bubble. Diagnostics via an electrical Langmuir probe and a hot emissive probe were extensively used for scanning the plasma bubble. Plasma floating potential fluctuations were measured at three different positions of the plasma bubble. The instability in the pattern showed the dynamic transition from periodic to chaotic for increasing magnetic fields. Time scale analysis using continuous wavelet transform was carried out to identify the presence of non‐linearity from the contour plots. The mechanisms of the low‐frequency instabilities along with the transition to chaos could be qualitatively explained. Non‐linear techniques such as fast Fourier transform, phase space plot, and recurrence plot were used to explore the dynamics of the system appearing during plasma fluctuations. In order to demonstrate the observed chaotic phenomena in this study, characteristics of chaos such as the Lyapunov exponent were obtained from experimental time series data. The experimentally observed potential structure is confirmed with numerical analysis based on fluid hydrodynamics.     

Effects of built-in electric field on donor binding energy in InGaN/ZnSnN2 quantum well structures

In_xGa${}_{1?x}$N/ZnSnN₂ quantum well structures are studied in terms of a binding energy of a donor atom. 1s and $2p_{\pm }$ impurity states are considered. The Schrödinger's and Poisson's equations are solved self-consistently. A hydrogenic type wave function to represent each impurity state is assumed. The calculations include band-bending in the potential energy profile introduced by the built-in electric field existing along the structures. The binding energy and the energy of the transition between the impurity states are represented as a function of the quantum well width, the donor position, and the indium concentration. An external magnetic field up to 10 T is included into the calculations to compute the Zeeman splitting. The maximum value of the transition energy is around 30 meV (nearly 7.3 THz) which occurs in a 15-Å In_0.3Ga_0.7N/ZnSnN₂ quantum well. Being strong, the built-in electric field makes the transition energy drop quickly with the decreasing well width. For the same reason, the energy curves are found to be highly asymmetric function of the donor position around the well center. Compared to the bulk value, the transition energy in the quantum well structures enhances nearly two-fold.     

Ground state solutions for Klein–Gordon–Maxwell system with steep potential well

In this paper, we study the following Klein–Gordon–Maxwell system $\left\{\begin{array}{c}-\Delta u+(\lambda a\left(x\right)+1)u-(2\omega +\varphi )\varphi u=f(x,u),\mathrm{in}{\mathbb{R}}^3,\hfill \\ -\Delta \varphi =-(\omega +\varphi )u^2,\mathrm{in}{\mathbb{R}}^3.\hfill \end{array}\right.$Using variational methods, we obtain the existence of ground state solutions under some appropriate assumptions on $a$ and $f$.     

Modelling of high-temperature dark current in multi-quantum well structures from MWIR to VLWIR

In this paper, a model to calculate the dark current of quantum well infrared photodetectors at high-temperature regime is presented. The model is derived from a positive-definite quantum probability-flux and considers thermionic emission and thermally-assisted tunnelling as mechanisms of dark current generation. Its main input data are the wave functions obtained by time-independent Schrodinger equation and it does not require empirical parameters related to the transport of carriers. By means of this model, the dark current of quantum well infrared photodetectors at high-temperature regime is investigated with respect to the temperature, the barrier width, the applied electric field and the position of the first excited state. The theoretical results are compared with experimental data obtained from lattice-matched InAlAs/InGaAs, InGaAsP/InP on InP substrate and AlGaAs/GaAs structures with rectangular wells and symmetric barriers, whose absorption peak wavelengths range from MWIR to VLWIR. The corresponding results are in a good agreement with experimental data at different temperatures and at a wide range of applied electric field.     

A picosecond widely tunable deep-ultraviolet laser for angle-resolved photoemission spectroscopy

We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm,generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti:sapphire laser.A β-BaB2O4 walk-off compensation configuration and a KBe2BO3F2 prism-coupled device are adopted for the generation of second harmonic and fourth harmonics,respectively.The highest power is 3.72 mW at 193 nm,and the fluctuation at 2.85 mW in 130 min is less than ±2%.