45钢固体粉末法稀土、硼、铬、铝共渗工艺研究

研究了RE_Mg合金对固体粉末法硼、铬、铝共渗层成分、组织和性能的影响 .发现随着RE_Mg合金加入量的增加 ,渗层中Al2 O3的量不断增多 ,当RE_Mg合金加入量为 5 %时 ,渗层中出现连续致密分布的Al2 O3黑区组织 ,对此进行了性能测试和机理探讨     

多点柔性墩连续顶推技术在梁桥中的应用

结合工程施工实践,介绍了多点柔性墩连续顶推施工技术.     

加强管理体制改革与创新努力使实验教学和管理上一个新台阶

结合化学系实验室现状 ,探讨了实验教学在实现两个重要转变的过程中 ,进行实验室体制改革等方面的思路和实践 .     

检测陀螺仪转子安装精度的一种新方法

陀螺仪转子的安装精度对其运行的稳定性和精确性有很大的影响。由于要求的安装误差很好，因此，对其误差的测量要求准则。其测量误差应经安装误差小1／10以及上，一般的检测方法很难达到要求，为此介绍了一种新型的光电检测方法，该方法利用狭缝的光学傅立叶变换提取陀螺仪转子的误差信息，采用计算机进行信息处理，从而完成陀螺仪转子的自动检测和分类，该方法也可用于其他一些精密年的自动检测处理。     

浅谈思想政治工作是社会主义精神文明建设的根本保证

思想政治工作作为党的工作的一条重要战线，在现代化建设事业中占极基重要地位。本文从思想政治工作在社会主义精神文明建设中的重要作用入手，试图从其基本内涵上阐述前者之于后者的根本保证作用。     

关于Herstein定理的逆问题研究

设R是一个环,如果存在n>1使f:x→xn为R的一个环同态,则映射f:R→R称为一个幂自同态。本文将完全刻划出无零因子环的所有幂自同态。     

Dominant modes of submerged thin cylindrical shells

The relationship between the dominant mode of the submerged thin cylindrical shell and the flexural wave velocity is investigated. The natural frequency corresponding to the vibration mode is obtained as the solution of characteristic equation of thin cylindrical shell. However, it is difficult to estimate the dominant mode, especially if two or more vibration modes are involved. To estimate the dominant mode of a thin shell in vacuo, the concept of “modified bending stiffness” has been introduced. In this paper, the concept of modified bending stiffness is extended to estimate the dominant mode of a submerged thin cylindrical shell. The dominant mode of a submerged thin cylindrical shell is theoretically discriminated from the other mode based on the smallness of the modified bending stiffness of the submerged shell. The validity of our theory is confirmed by a good agreement between theoretical and experimental results on flexural wave velocity.     

EXISTENCE OF PERIODIC SOLUTIONS OF SYSTEM OF DIFFERENCE EQUATIONS

This paper studies the nonautonomous nonlinear system of difference equationsΔx(n)=A(n)x(n)+f(n,x(n)),n∈Z,(*) where x(n)∈R~N,A(n)=(a_(ij)(n))N×N is an N×N matrix,with a-(ij)∈C(R,R) for i,j= 1,2,3,...,N,and f=(f_1,f_2,...,f_N)~T∈C(R×R~N,R~N),satisfying A(t+ω)=A(t),f(t+ω,z)=f(t,z) for any t∈R,(t,z)∈R×R~N andωis a positive integer.Sufficient conditions for the existence ofω-periodic solutions to equations (*) are obtained.     

Method of lines with boundary elements for 1‐D transient diffusion‐reaction problems

Time‐dependent differential equations can be solved using the concept of method of lines (MOL) together with the boundary element (BE) representation for the spatial linear part of the equation. The BE method alleviates the need for spatial discretization and casts the problem in an integral format. Hence errors associated with the numerical approximation of the spatial derivatives are totally eliminated. An element level local cubic approximation is used for the variable at each time step to facilitate the time marching and the nonlinear terms are represented in a semi‐implicit manner by a local linearization at each time step. The accuracy of the method has been illustrated on a number of test problems of engineering significance. © 2005 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 2006     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.