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41.
Physical aspects of an operation of the GaAs-based InGaAs/GaAs quantum-well (QW) VCSELs with the intentionally detuned optical
cavities have been considered in the present paper using the comprehensive three-dimensional self-consistent optical–electrical–thermal-gain
simulation. In GaAs-based structures, very good DBR resonator mirrors and a very efficient methods to confine radially both
the current spreading and the electromagnetic field with the aid of oxide apertures may be applied. It has been found using
the above simulation that even currently available immature technology enables manufacturing the above devices emitting radiation
of wavelengths over 1.20 μm. In particular, while the room-temperature 1.30-μm lasing emission is still beyond possibilities
of the InGaAs/GaAs QW VCSELs, these structures may offer analogous 1.25-μm emission, especially for the high-power and/or
high-temperature operation. 相似文献
42.
Nicolae Tomozeiu 《Applied Surface Science》2006,253(1):376-380
Thin films of a-SiOx (0 < x < 2) were prepared by reactive r.f. magnetron sputtering from a polycrystalline-silicon target in an Ar/O2 gas mixture. The oxygen partial pressure in the deposition chamber was varied so as to obtain films with different values of x. The plasma was monitored, during depositions, by optical emission spectroscopy (OES) system. Energy dispersive X-ray (EDX) measurements and infra-red (IR) spectroscopy were used to study the compositional and structural properties of the deposited layers.Structural modifications of SiOx thin films have been induced by UV photons’ bombardment (wavelength of 248 nm) using a pulsed laser. IR spectroscopy and X-ray photoemission spectroscopy (XPS) were used to investigate the structural changes as a function of x value and incident energy. SiOx phase separation by spinodal decomposition was revealed. The IR peak position shifted towards high wavenumber values when the laser energy is increased. Values corresponding to the SiO2 material (only Si4+) have been found for laser irradiated samples, independently on the original x value. The phase separation process has a threshold energy that is in agreement with theoretical values calculated for the dissociation energy of the investigated material.For high values of the laser energy, crystalline silicon embedded in oxygen-rich silicon oxide was revealed by Raman spectroscopy. 相似文献
43.
利用BUU模型模拟核-核碰撞36Ar+108Ag(35Mev/u)、14N+108Ag(35MeV/u)中的平衡前中子发射.模拟结果与唯象的运动源拟合给出的中等速度源成份相吻合.这说明中等速度源成份产生于核-核碰撞的早期,对应平衡前发射.并从级联碰撞的角度定量地研究了平衡前发射的持续时间 相似文献
44.
T. Drglin 《Accreditation and quality assurance》2003,8(3-4):130-133
A validation procedure based on the ISO/IEC 17025 standard was used to demonstrate the long-term stability of a calibration
process and to assess the measurement uncertainty of a standard test method for optical emission vacuum spectrometric analysis
of carbon and low-alloy steel (ASTM E 415–99a). The validation was used to provide documented evidence that the selected method
fulfils the requirements and that the method is ”fit for purpose”. A test for drift was applied to determine statistically
whether the analytical results vary systematically with time. The accuracy and traceability of the optimised method were tested
by an analysis of closely matched matrix certified reference materials (CRMs). The measurement uncertainty estimations took
account of the precision study, the bias and its uncertainty, and the qualification of uncertainties not considered in the
overall performance studies.
Received: 2 November 2002 Accepted: 2 January 2003
Acknowledgement The author expresses gratitude to Dr. Aleš Fajgelj for helpful discussions during the 3rd Central European Conference on Reference Materials and Measurements.
Presented at CERMM-3, Central European Reference Materials and Measurements Conference: The function of reference materials
in the measurement process, May 30–June 1, 2002, Rogaška Slatina, Slovenia
Correspondence to T. Drglin 相似文献
45.
Phenethylammonium-based perovskites, which can be regarded as a semiconductor/insulator multiple quantum well consisting of lead halide semiconductor layers sandwiched between phenethylammonium insulator layers were prepared. To investigate the effects of the electronic state and the orientation of organic insulator layers on the optical properties of layered perovskites, fluorine substituted analogues were also prepared. The structure and optical properties were investigated by the XRD, UV–Vis absorption, and fluorescence measurements. The exciton absorption peak was shifted by the substitution of fluorine atoms in organic ammonium compounds. It became clear that the optical properties of two-dimensional perovskite compounds were controlled by the substitution of fluorine atoms. 相似文献
46.
采煤工作面瓦斯涌出分析及控制技术 总被引:1,自引:0,他引:1
高艳龙 《科技情报开发与经济》2007,17(36):268-269
分析了采煤工作面瓦斯涌出规律及其主要影响因素,论述了瓦斯治理及控制技术。 相似文献
47.
A. S. Yasyukevich V. G. Shcherbitskii V. É. Kisel' A. V. Mandrik N. V. Kuleshov 《Journal of Applied Spectroscopy》2004,71(2):202-208
A new method of determining the stimulated emission cross-section spectra from the absorption cross-section spectra, which we call the integral method of reciprocity, is suggested it does not require knowledge of the structure of the impurity-center electron levels. Based on this method, formulas for calculating the radiation lifetime of impurity centers in crystals have been derived. The effectiveness of the integral method of reciprocity was demonstrated in determining the stimulated emission cross sections and radiation lifetime of an ytterbium ion in the laser crystals Yb3+:KYW and Yb3+:KGW. 相似文献
48.
工业污染排放中气──固两相流的光学测量 总被引:1,自引:0,他引:1
烟尘及各种工业性粉尘排放是典型的气-固两相系.迄今为止,国内外尚缺少有效的监测其排放的手段.本文基于光的散时原理,提出了一种非接触的光学方法,能对上述固体颗粒物的污染排放浓度及粒径大小进行实时、在线的监测。计算机模拟和实验研究表明,该方法具有广阔的工业应用前景。 相似文献
49.
L.A. Bakaleynikov E.Yu. Flegontova E. Zolotoyabko 《Journal of Electron Spectroscopy and Related Phenomena》2006
Capabilities of the imaging techniques, in which X-rays are converted to electrons and then the emitted electrons are registered by means of an electron microscope, are analyzed, the focus being on the factors limiting lateral resolution at the stage of electron emission. Bearing in mind the tendency to use harder synchrotron X-rays for some combined X-ray-electron microscopy methods, calculations were made for two significantly different X-ray energies: E = 1.828 keV (K-edge of Si) and E = 11.923 keV (L3-edge of Au). By using Monte Carlo simulations of the electron trajectories beneath the surface of the sample we show that the radius of the spot from which photoelectrons are emitted could be as small as 1 nm. However, when proper account is taken of an entire electron cascade associated with the re-building of electron shells after photoelectron emission, spots more than one order of magnitude larger result, limiting the best lateral resolution to 20–30 nm. 相似文献
50.