Preparation and optical properties of solid solution semiconductor (Zn x Cd1−x S) doped silica glasses

Semiconductor(Zn_xCd_1−x S) doped silica glasses were prepared by Sol-Gel process andin situ growth technique. The structure of the materials was characterized by X-ray diffraction technique, the particle size of semiconductor crystallites from X-ray patterns was estimated less than 10 nm. From absorption spectra, it is obtained that the absorption edges shifted to short wavelength direction when Zn contents increased, and the absorption edge can be adjusted from 2.46 eV to 2.96 eV by controlling Zn contents. The third-order nonlinear optical susceptibility was studied at 532 nm with 8 ns pulse laser by degenerate four wave mixing (DFWM) technique.     

关于时滞Liénard型方程的周期解

本文研究具有时滞的Lienard型方程周期解的存在性,得到了一些新的结果。     

(磁)流体波动力学问题的近似求解─参数微分法

针对非线性物理如等离子体物理、流体力学、大气科学等领域中信受人们关注的两类摄动问题（Ⅰ）、（Ⅱ）,引进"参数微分法"得到其近似解,其结果可用于研讨摄动对原物理问题解的影响。类似的问题在许多动力学问题物理解的数值定性分析及其应用WKB方法处理时也会经常遇到。这里的方法仅对两个特例给出,无疑可用于其它类似问题的处理。     

一类积分方程的极小模最小二乘解稳定性的讨论

设Ｈ为Ｈｉｌｂｅｒｔ空间,Ａ为Ｈ上的有界线性算子,简记为Ａ∈Ｂ（Ｈ）．Ａ的值域Ｒ（Ａ）为闭时,则记为Ａ∈ＢＣ（Ｈ）．我们熟知对任意Ａ∈ＢＣ（Ｈ）,存在唯一有界线性算子Ａ＋∈Ｂ（Ｈ）,使得：１）ＡＡ＋＝ＰＲ（Ａ）,２）Ａ＋Ａ＝ＰＲ（Ａ＊）,３）Ｎ（Ａ＋...     

应用区间套法求解填充丝加热状态方程

热丝填充埋弧焊是在传统埋弧焊基础上发展起来的一种优质,高效,节能的焊接新工艺,在该工艺中,填充丝的加热状态十分重要,本文介绍了应用区间套法求解填充丝加热状态方程的思路,并给出计算结果和应用实例。     

半胱氨酸组成的二肽与锌络合的研究(部分二)用电位滴定法研究二肽和锌络合物的结构(英文)

利用电位滴定法测定了溶液中二肽Ｈ－Ｃｙｓ－Ｃｙｓ－ＯＥｔ（１）的ｐＫａ值以及它的锌络合物的稳定常数和组分分布,从而推断出锌络合物的结构     

一些含指数函数的函数方程（Ⅰ）

本文确定满足条件ｆ（ｘｙｚ）＝ｆ（ｘｚｙ）的方程ｆ（ｘｙ）＋ｆ（ｘｙ－１）－［Ψ（ｙ）＋Ψ（ｙ）－１］ｆ（ｘ）＝ｇ（ｘ）ｈ（ｙ）的一般解．     

具有空间对照结构渐近解的构造(Ⅰ)

对具有快慢变量非线性方程组的边值问题(μ是小参数) (du)/(dx)=g(x,u,v,w) μ(dv)/(dx)=F(x,u,w) μ(dw)/(dx)=G(x,u,v) u(0,μ)=v(0,μ)=v(1,μ)=0 本文讨论了产生空间对照结构时的渐近解构造,“啪”型内部层解位置的确定及给出了渐近解的误差估计。     

在"高聚物的结构与性能"课程中应该引入的几个新概念

在“高聚物的结构与性能”课程教学中，很有必要向学生介绍高分子科学近十几年来的发展，尤其是在高分子凝聚态基本物理问题上的研究成果以及相关的新概念、新知识，特别是我国学者的贡献。本文较为详细地讨论了近年来作者在教学中介绍的几个新概念，如：动态接触浓度、单链凝聚态、凝聚缠结等。     

Defect clusters and precipitation/oxidation of MgO-Co1−xO solid solution

MgO and Co_1−xO powders in 9:1 and 1:9 molar ratio (denoted as M₉C₁ and M₁C₉, respectively) were sintered and homogenized at 1600°C followed by annealing at 850°C and 800°C, respectively to form defect clusters and precipitates. Analytical electron microscopic observations indicated the protoxide remained as rock salt structure with complicated planar diffraction contrast for M₉C₁ sample, however with spinel paracrystal precipitated from the M₁C₉ sample due to the assembly of charge- and volume-compensating defects of the 4:1 type, i.e., four octahedral vacant sites surrounding one Co³⁺-filled tetrahedral interstitial site. The spacing of such defect clusters is 4.5 times the lattice spacing of the average spinel structure of Mg-doped Co_3−δO₄, indicating a higher defect cluster concentration than undoped Co_3−δO₄. The {111} faulting of Mg-doped Co_3−δO₄/Co_1−xO in the annealed M₁C₉ sample implies the possible presence of zinc blend-type defect clusters with cation vacancies assembled along oxygen close packed (111) plane.