基于半导体光放大器中非线性偏振旋转效应单一光缓存环全光时隙交换处理能力研究

对基于半导体光放大器(SOA)中非线性偏振旋转效应(NPR)效应的单一光缓存环多数据包的全光时隙交换(TSI)处理能力进行了理论和实验研究,在使用归纳法导出单一缓存环实现多数据包全光时隙(TSI)必要条件的基础上,针对各种全光TSI操作要求得出了相应光数据包的调度方案,在实验上,以基于SOA中NPR效应的单一光缓存环实验系统,开展了多数据包全光TSI操作的实验研究,根据上述光数据包理论调度方案进行相应系统参数设定,进行了速率为10 Gb/s的3个和4个数据包的全光TSI实验,实验结果与理论预期相符合,研究成果为减少昂贵SOA元件的用量、简化基于光缓存环全光TSI系统的结构提供了可靠依据,对推进全光TSI技术的发展具有重要意义。     

缓冲层对量子阱二能级系统中电子子带间跃迁光吸收的影响

由于ZnO缓冲层对纤锌矿ZnO/Mg_xZn_(1-x)O有限深单量子阱结构左垒的限制作用,导致阱和右垒的尺寸、Mg组分值等因素将影响系统中形成二能级.本文考虑内建电场、导带弯曲及材料掺杂对实际异质结势的影响,利用有限差分法数值求解Schr?dinger方程,获得电子的本征能级和波函数,探讨ZnO缓冲层对此类量子阱形成二能级系统的尺寸效应及三元混晶效应的影响;利用费米黄金法则探讨缓冲层、左垒、阱及右垒宽度和三元混晶效应对此类量子阱电子子带间跃迁光吸收的影响.计算结果显示:对于加入ZnO缓冲层的ZnO/Mg_xZn_(1-x)O有限深单量子阱二能级系统,左垒宽度临界值会随着阱宽和Mg组分值的增大而逐渐减小,随着右垒宽度和缓冲层厚度的增大而逐渐增大;量子阱中电子子带间跃迁光吸收峰会随着左垒、右垒尺寸以及Mg组分的增大发生蓝移,随着阱宽增大而发生红移.本文所得结果可为改善异质结器件的光电性能提供理论指导.     

AWG and EDFA based optical packet switch using feedback shared loop buffer memory

Optical packet switching provides high speed, data rate/format transparency, efficient use of bandwidth and flexibility. The major problem in the implementation of “all-optical” switching is contention which occurs when two or more packets arrive at the same time for the same destination. To resolve the contention, we have proposed an optical packet switch architecture based on WDM loop buffer memory in the feedback configuration. In that architecture, the contending packets are stored in a loop buffer module, and routed in the free time slots. The buffering duration in the recirculating loop is limited by a circulation limit. The analysis was been done to obtain the maximum number of allowed circulations. This paper proposes improved version of that optical packet switch architecture, to increase the number of maximum allowed circulations. The modification is done either by adding an extra erbium doped fiber amplifier (EDFA) in the original switch or by replacing the core space switch with arrayed waveguide grating (AWG). The performance analysis has been done by the simulations.     

(111)择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜的制备及研究

选用不同浓度的Pb(Zr_0.52Ti_0.48)O₃溶胶，用Sol-gel法在Pt/Ti/SiO₂/Si基片上沉积一层厚度不同的Pb(Zr_0.52Ti_0.48)O₃ (PZT52)过渡层，经400℃烘烤、550℃退火等程序后，再用Sol-gel法在PZT52过渡层上沉积Pb(Zr_0.52Ti_0.48)O _{关键词： PZT铁电薄膜 择优取向 过渡层 剩余极化强度}     

毛细管电泳样品电堆积富集过程的数值研究

毛细管电泳样品电堆积富集过程可以浓缩样品组分,从而提高检测灵敏度,是一种有效的样品富集技术。本文通过合理的简化和假设,把毛细管中电堆积富集过程中所涉及的主要变量根据电势分布方程、缓冲溶液的浓度方程和样品粒子的质量传输方程进行耦合求解,建立了一个一维的数学模型,并应用有限元的方法对该模型进行了求解。计算结果给出了毛细管中缓冲溶液浓度及电场强度的分布随时间变化的过程,以及富集过程中毛细管中的电势分布曲线;得到了样品粒子浓度在电堆积富集过程和富集之后的再次扩散过程中的分布曲线以及正、负样品粒子的分离过程;最后分析了不同缓冲溶液浓度比对样品富集效果的影响。该研究为样品电堆积富集技术的进一步完善提供了一种简单可行的理论研究方法。     

Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire （0001） substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature （HT） A1N layer and a low-temperature （LT） A1N layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-A1N layer can result in the growth of GaN epilayer in Ga-polarity and the LT-A1N layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm^2/V.s at room temperature when the thickness of LT-A1N layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilavers by the utilization of LT-A1N layer.     

基于动态部分缓存共享机制的改进RED算法

为了解决Internet中网络业务流量不断增长而引发的网络拥塞问题,采用部分缓存共享机制对随机早期检测算法进行改进。根据网络节点缓存资源实时使用情况模糊动态调整丢弃阈值,结合采用比例调度算法,提高了网络共享资源的使用效率,保证了不同网络业务的服务质量。仿真试验结果表明,改进RED算法可以提高网络节点的成功转发率,改善关键业务的延迟指标,具有更好的拥塞控制性能。     

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.     

Second Dissociation Constants of 4-[N-morpholino]butanesulfonic Acid and N-[2-hydroxyethyl]piperazine-N′-4-butanesulfonic Acid from 5 to 55°C

The values of the second dissociation constant, pK ₂, for the dissociation of the NH⁺ charge center of the zwitterionic buffer compounds 4-(N-morpholino)butanesulfonic acid (MOBS), and N-(2-hydroxyethyl)piperazine-N-4-butanesulfonic acid (HEPBS) have been determined from 5 to 55°C, including, 37°C at intervals of 5°C. The electromotive-force (emf) measurements have been made utilizing hydrogen electrodes and silver–silver chloride electrodes. The value of pK ₂ for MOBS was found to be 7.702 ± 0.0005, and 8.284 ± 0.0004 for HEPBS, at 25°C, respectively. The related thermodynamic quantities, G ^o, H ^o, S ^o, and C _p ^o for the dissociation processes of MOBS and HEPBS have been derived from the temperature coefficients of pK ₂. Both the MOBS and HEPBS buffer materials are useful as primary pH standards for the control of pH 7.3 to 8.6 in the region close to that of physiological fluids.     

基于改进的变权缓冲灰色模型在沉降预测中的应用

针对灰色模型在中后期沉降预测中的精度问题,提出了单、双权幂函数弱化缓冲算子,并结合变权背景值建立改进的变权缓冲GM(1,1)模型。证明了新算子能提高光滑性、缩小级比偏差,实现对原始沉降数据的预处理。对于模型中的权值采用以还原值与原始值平均相对误差最小为目标的粒子群优化算法确定。最后,以高填方机场地表沉降数据预测为例,验证所提改进模型的有效性。结果表明：新算子能够有效弱化沉降序列受到的冲击扰动影响,结合变权背景值能显著提高灰色模型在中后期沉降预测中的精度。此外,对新算子的权值进行限定后,可得到两种不同的变权弱化缓冲算子。