Electron diffraction investigation of PPTA/nylon 3T blends from shear-oriented anisotropic solutions

Nematic solutions of PPTA and nylon 3T were prepared in H₂SO₄ Optical microscopy was used to ascertain the phase behaviour of the blends. In the studied concentration range, no phase separation was observed. The solutions were shear-oriented and coagulated, and the resulting samples were studied by x-ray and electron diffraction. Nylon 3T crystallised even at a low concentration, which is indicative of a phase separation. Electron diffraction investigations of the oriented samples showed that well-oriented areas, which were predominantly composed of PPTA, adjoined areas where the major component, nylon 3T, showed no orientation. The relative proportion of the unoriented areas increased with increasing nylon concentration. It was concluded that, upon coagulation, the nylon was segregated into separate phases and crystallised unoriented, whereas for PPTA, crystallisation proceeded with very little chain rearrangement therefore preserving the orientation.     

具有挠性附件的全充液刚体耦合系统的姿态控制动力学与稳定性

建立了一类带有挠性结构附件的全充液刚体耦合系统主动控制动力学模型，给出了系统的控制律，进而研究了控制与镇定问题，得到了受控系统姿态定位和指数渐近稳定的结论。     

激发数学学习兴趣的策略

针对多数学生对学习数学有枯燥、乏味的感觉，阐述了必须在教学中采用生动的富有感染力的教学方法，以激发学生对数学学习的浓厚兴趣，使学生在提出问题和解决问题中养成善于思考，勇于探索的良好品质。     

树状管网技术经济计算分析

通过对目标函数(年费用折算值)W0在水力约束条件下最小值的分析计算,介绍了起点水压未知树状管网技术经济计算的方法,并求出了相应的经济水头损失hij和经济管径Dij的表达式。     

Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.     

一个非线性系统动力学行为的注记

讨论参数λ＜０时非线性系统ｘｎ＋１＝λｘｎ（１－ｘｎ）的动力学行为．     

Structural anisotropy in friction‐deposited layers of polystyrene

Friction‐deposited layers of atactic polystyrene (PS) on inert and OH‐grafted gold substrates were the subject of this study to establish a relationship between the friction process and the resulting anisotropy of the transferred polymer chains. We show, by using polarization‐modulation infrared reflection‐absorption spectroscopy that the deposited PS chains involve an anisotropy in which PS main backbone is rather perpendicular to the friction support, fact that is surprising when compared with the majority of polymers where the anisotropy is along the sliding direction. Moreover, our calculation of the orientation angles revealed that PS chains are more perpendicular in the transferred layers than in spin‐coated films. This particular anisotropy is probably due to a parallel reorientation of the phenyl ring on the friction support whatever the surface chemistry is. On the other hand, this study was useful to rectify the assignment of infrared bands unclearly reported in the literature. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3272–3281, 2006     

Thermal properties and fracture toughness of a liquid‐crystalline epoxy resin cured with an aromatic diamine crosslinker having a mesogenic group

A mesogenic‐type curing agent was synthesized to introduce a mesogenic group not only into epoxy resin backbones but also into the crosslink units. In the mesogenic curing agent system, the domain size became larger, and the network arrangement in each domain existed to a greater extent than that in a system cured with the ordinary diamine curing system according to the evidence from polarized optical micrographs and polarized Fourier transform infrared mapping measurements. Moreover, the fracture toughness of the system was considerably improved. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2486–2494, 2006     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

太赫兹半导体探测器研究进展

太赫兹（THz）探测器是THz技术应用的关键器件之一．基于半导体的全固态THz量子阱探测器（THzQWIP）具有探测响应速度快、制作工艺成熟、体积小和易集成等优点．文章简要介绍了THz探测器的分类和特点，重点介绍了THzQWIP的工作原理和研究进展．