零级拟亚纯映射的Borel方向和充满圆

对于满足条件lim↑—r→∞S(r，f)/logr=∞lim↑—r→∞log S(r，f)/loglogr=1(1≤1＜∞)的零级拟亚纯映射，证明了其Borel方向的存在性，并由Borel方向构造了一列充满圆。     

监控软件图形组态子系统的研究与设计

提出了将面向对象程序技术应用到图形系统开发的技术，设计了静态图形部分基本图形类的继承结构，着重阐述了利用面向对象程序技术对动态图形部分的关键技术如图形缩放、百分比填充、页面切换以及出现屏幕闪烁时的解决方案，从而实现了图形组态系统的开发。     

注塑件局部形状与充模时间和充满时温度场的关系

运用比例，分析了１／８球面用于过渡时与周边几何约束之间的关系，并在此基础上提出了过渡曲面设计的新方法．上述设计注塑过程的工程分析表明：反映局部形状的过渡曲面与充模时间、充满型腔时刻温度场之间存在显著的联系，优美的外部造型对应着较短的充模时间和较均匀的温度场．这意味着对注塑件，优美外部造型与精良内在品质之间存在一种潜在的和谐．     

Decision problems in the space of Dehn fillings

Normal surface theory is used to study Dehn fillings of a knot-manifold. We use that any triangulation of a knot-manifold may be modified to a triangulation having just one vertex in the boundary. In this situation, it is shown that there is a finite computable set of slopes on the boundary of the knot-manifold, which come from boundary slopes of normal or almost normal surfaces. This is combined with existence theorems for normal and almost normal surfaces to construct algorithms to determine precisely those manifolds obtained by Dehn filling of a given knot-manifold that: (1) are reducible, (2) contain two-sided incompressible surfaces, (3) are Haken, (4) fiber over S¹, (5) are the 3-sphere, and (6) are a lens space. Each of these algorithms is a finite computation.Moreover, in the case of essential surfaces, we show that the topology of each filled manifold is strongly reflected in the combinatorial properties of a triangulation of the knot-manifold with just one vertex in the boundary. If a filled manifold contains an essential surface then the knot-manifold contains an essential normal vertex solution which caps off to an essential surface of the same type in the filled manifold. (Normal vertex solutions are the premier class of normal surface and are computable.)     

极化中束缚电荷成因的微观机制

本文通过对两侧电介质极化现象的讨论，从实验和极化理论上解释了介质表面出现电荷分布的原因     

Effects of Si-doped GaAs layer on optical properties of InAs quantum dots

We have investigated the optical properties of InAs self-assembled quantum dots (SAQDs) with the Si-doped GaAs barrier layer. Two types of samples are fabricated according to the position of the Si-doped GaAs layer. For type A samples the Si-doped GaAs layer is grown below the QDs, whereas for type B samples the Si-doped GaAs layer is grown above the QDs. For both types of samples the excited-state emissions caused by state filling are observed in photoluminescence (PL) spectra at high excitation power densities. The bandgap renormalization of QDs can be found from the shift of the PL peak energy. Particularly, for type A samples the Si atoms act as nucleation centers during the growth of InAs QDs on the Si-doped GaAs layer and affect the density and the size of the QDs. The Si-doped GaAs layer in type A samples has more effects on the properties of QDs, such as state filling and bandgap renormalization than those of type B samples.     

Ca和Ce双原子复合填充p型CamCenFexCo4－xSb12化合物的合成及热电性能

用高温熔融法合成了Ca和Ce复合填充的单相p型Ca_mCe_nFe_{xCo4-xSb12化合物，探索了两种原子复合填充对其热电性能的影 响规律.研究结果表明，填充分数相同时，Ca和Ce两种原子复合填充的p型CamCe nFexCo4-xSb12化合物的载流子浓度和电 导率介于Ca或Ce一种原子单独填充的化合物之间，且随两种原子填充分数m+n的增加而降低 ；赛贝克系数随两种原子填充总量，尤其是Ce填充分数m的增加以及温度的上升而增加；在 相同填充分数时，两种原子复合填充的p型CamCenFexC o4-xSb12化合物的晶格热导率较Ca或Ce一种原子单独填充的化合物 的晶格热导率低，当总填充分数m+n为0.3左右，且Ca和Ce的填充量大致相等时，化合物的晶 格热导率最低.p型Ca0.18Ce0.12Fe1.45Co2.55Sb12.21化合物的最大热电性能指数ZT值在750K时达到1.17. 关键词： skutterudite化合物 双原子复合填充 合成 热电性能}     

256色模式下图形图像处理系统中对不规则区域的处理

概述了图形图像处理系统中关于不规则区域的基本算法，包括：区域填充，边界跟踪，边界标志，几何处理，区域分割等等．并且，根据２５６色模式的特殊性，对传统的算法做了有针对性的改进，加快了处理速度，使其更适合于电影电视字幕、动画卡通人物等不规则图形图像区域．同时还给出了改进算法的程序设计的技巧．     

原子非简谐振动对石墨烯吸附系统电荷分布的影响

建立了石墨烯吸附原子系统的物理模型,考虑到原子的非简谐振动和电子-声子相互作用,计算了吸附原子与石墨烯原子的相互作用能,用统计物理理论和方法,得到在石墨烯上吸附原子的概率和金属原子电荷填充数随温度变化的解析表示式.以碱金属为例,探讨了电子-声子相互作用和原子非简谐振动对电荷填充数的影响.结果表明:石墨烯吸附系统的电荷填充数随吸附原子距离的增大而线性地减小,随温度的升高和电子-声子相互作用能的增大而非线性地增大;若不考虑非简谐振动,则电荷填充数与位置、温度等无关.温度愈高、电子-声子相互作用能愈小,非简谐效应愈显著.