Adhesion in the contact of a spherical indenter with a layered elastic half-space

With the emergence of micro- and nano-technology, the contact mechanics of MEMS and NEMS devices and components is becoming more important. Thus it is important to gain a better understanding of the role of coatings and thin films on micro- and nano-scale contact phenomena, and to understand the interactions of measurement devices, such as an atomic force microscope (AFM), with layered media.More specifically, in this work the frictionless contact, with adhesion, between a spherical indenter and an elastic-layered medium is investigated. This configuration can be viewed as either a single contact model or as a building block of a multi-asperity rough surface contact model. As the scale decreases to the nano level, adhesion becomes an important issue. The presence of adhesion affects the relationships among the applied force, the penetration of the indenter, and the size of the contact area. This axisymmetric problem includes the effect of adhesion using a Maugis type of adhesion model. This model spans the range of the Tabor parameter between the JKR and DMT regions. The key parameters in this analysis are the elastic moduli ratio of the layer and the substrate, the dimensionless layer thickness, and the Maugis adhesion parameter. The results can be applied to a rigid or to an elastic indenter.     

Extension of Stoney's formula to non-uniform temperature distributions in thin film/substrate systems. The case of radial symmetry

Current methodologies used for the inference of thin film stress through curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. By considering a circular thin film/substrate system subject to non-uniform, but axisymmetric temperature distributions, we derive relations between the film stresses and temperature, and between the plate system's curvatures and the temperature. These relations featured a “local” part which involves a direct dependence of the stress or curvature components on the temperature at the same point, and a “non-local” part which reflects the effect of temperature of other points on the location of scrutiny. Most notably, we also derive relations between the polar components of the film stress and those of system curvatures which allow for the experimental inference of such stresses from full-field curvature measurements in the presence of arbitrary radial non-uniformities. These relations also feature a “non-local” dependence on curvatures making full-field measurements of curvature a necessity for the correct inference of stress. Finally, it is shown that the interfacial shear tractions between the film and the substrate are proportional to the radial gradients of the first curvature invariant and can also be inferred experimentally.     

氧化铝陶瓷在高温磨损过程中的塑性变形与再结晶

Ａｌ２Ｏ３陶瓷在８００℃以上高温下的摩擦明显减小，在摩擦表面形成了由极细结晶构成的表面层。为了探讨这种表面层的形成机理，研究了Ａｌ２Ｏ３／Ａｌ２Ｏ３摩擦副在８００－１２００℃下于干摩擦时的塑性变形与再结晶，且用表面层厚度和晶粒大小来表征。表面层厚度和再结晶粒子尺寸均取决于试验温度、表观接触压力和滑动速度。根据对应变速率和摩擦表面温度的测算，发现再结晶粒了尺寸与Ｚｅｎｅｒ－Ｈｏｌｌｏｍｏｎ常数Ｚ的对     

Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate

Pt/TiO₂/TiN device with the amorphous TiO₂ film grown at room temperature under an oxygen partial pressure of 1.0 mTorr showed reliable bipolar switching behavior. During the electroforming process, a large number of oxygen vacancies formed in the TiO₂ film and accumulated at the Pt/TiO₂ interface. The barrier height of the Schottky contact of the Pt/TiO₂ interface was reduced owing to the presence of these oxygen vacancies, resulting in the low-resistance state (LRS). Moreover, oxygen ions diffused into the TiN electrode during the electroforming and set processes. On the other hand, the oxygen ions in the TiN electrode diffused out and reacted with oxygen vacancies in the TiO₂ film during the reset process, and the device changed from the LRS to the high-resistance state (HRS). Conduction in the LRS and HRS can be attributed to Ohmic conduction and the trap controlled space charged limited mechanism, respectively.     

Solvent‐Free Synthesis of Benzothiazolines in the Presence of Alumina

o‐Aminothiophenol reacted with ketones and β‐keto esters in the presence of alumina under mild and solvent‐free conditions to afford the corresponding benzothiazolines in high yields. Alumina can be reused for subsequent reactions without any loss of the activity.     

An Efficient General Synthesis of Squarate Esters

An efficient and general method for the synthesis of alkyl squarates is presented. This involves the reactions of squaric acid with the desired alcohol in the presence of an orthoformate. This was applicable for the synthesis of dimethyl-, diethyl-, diisopropyl, di-n-butyl and di-t-butyl squarates in yields ranging from 77–97%. It is a convenient and safe method that can be accomplished on a multigram scale.     

六棱柱状多晶γ-Al2O3的制备、表征及其形成机制研究

以AlCl₃·6H₂O为前驱物,在氨水介质中用水热法制备了具有新颖形貌特征的六棱柱状多晶γ-Al₂O₃颗粒。采用X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)及N₂物理吸脱附等方法对所制备的γ-Al₂O₃颗粒进行了表征,并对其形貌形成机制进行了分析。结果表明,铝前驱物在氨水介质中通过水热处理后,经焙烧可以形成形貌规整的六棱柱状γ-Al₂O₃颗粒,其边长与长度分别约为0.3 μm和2.5 μm。TEM图片显示,六棱柱颗粒是由尺寸在10 nm左右的粒子聚集而成,因而具有多晶γ相特征。所制备的γ-Al₂O₃材料具有发达的孔隙结构,比表面积为274 cm²/g,孔容为0.51 cm³/g,孔径集中分布在5.5 nm周围。研究发现,γ-Al₂O₃六棱柱形貌的形成机制与AlOOH二次粒子在NH₄⁺正电荷作用下发生的最稳态排列形式具有密切的关联。     

Formation of Trinuclear Rhodium‐Hydride Complexes [{Rh(PP*)H}3‐ (μ2‐H)3(μ3‐H)][anion]2—During Asymmetric Hydrogenation?

Recently described and fully characterized trinuclear rhodium‐hydride complexes [{Rh(PP*)H}₃(μ₂‐H)₃(μ₃‐H)][anion]₂ have been investigated with respect to their formation and role under the conditions of asymmetric hydrogenation. Catalyst–substrate complexes with mac (methyl (Z)‐ N‐acetylaminocinnamate) ([Rh(tBu‐BisP*)(mac)]BF₄, [Rh(Tangphos)(mac)]BF₄, [Rh(Me‐BPE)(mac)]BF₄, [Rh(DCPE)(mac)]BF₄, [Rh(DCPB)(mac)]BF₄), as well as rhodium‐hydride species, both mono‐([Rh(Tangphos)‐ H₂(MeOH)₂]BF₄, [Rh(Me‐BPE)H₂(MeOH)₂]BF₄), and dinuclear ([{Rh(DCPE)H}₂(μ₂‐H)₃]BF₄, [{Rh(DCPB)H}₂(μ₂‐H)₃]BF₄), are described. A plausible reaction sequence for the formation of the trinuclear rhodium‐hydride complexes is discussed. Evidence is provided that the presence of multinuclear rhodium‐hydride complexes should be taken into account when discussing the mechanism of rhodium‐promoted asymmetric hydrogenation.