Anodic Stripping Voltammetry of Heavy Metals at Nanocrystalline Boron‐Doped Diamond Electrode

Boron‐doped Diamond (BDD) electrode has become one of the important tools for heavy metal detection. By studying some analytical parameters of DPASV method, like deposition time and potential in different electrolyte concentrations (acetate buffer), the conditions for detecting very low metal ion levels (Zn, Cd, Pb, and Cu) could be chosen. Diluted electrolyte (0.01 M buffer) was one of the factors favoring low detection and quantification limits, but its quantification range is short in comparison to more concentrated media. For ?1.7 V deposition potential, the detection of single metal at ppb levels was reached in 60 s deposition time. Understanding different metal‐metal interactions shows the limits to the simultaneous determination of heavy metals at BDD. Quantification was possible for the simultaneous determination of Zn, Cd and Pb despite the overlapping of Zn and Cd peaks. The performance of the BDD was compared with that of another C‐based solid electrode: the glassy carbon electrode (without mercury plating). A lower base line current, wider potential range, higher sensitivity (3 to 5 times higher than GC) and longevity of the material were noticed for the BDD.     

对甲苯磺酸铜的电化学表征

合成了对甲苯磺酸铜,用X光单晶衍射确定了其结构.实验结果表明,该盐容易脱除全部结晶水,在空气中不潮解.分别测定了对甲苯磺酸铜(Cu(p-OTs)2)在H2O、CH3OH和DMF中的电化学参数.实验结果表明Cu(p-OTs)2在不同溶剂中的反应机理各异. Cu(II)的电化学还原在H2O中是分两步进行,而在CH3OH和DMF中的电化学还原是一步两电子过程.对实验结果进行了分析讨论.     

Characterization of Carbon Film Electrodes for Electroanalysis by Electrochemical Impedance

The interfacial behavior of electrodes fabricated from carbon film resistors of 2 and 20 Ω in supporting electrolyte solutions of varying pH used in electroanalytical experiments has been characterized by electrochemical impedance spectroscopy with complementary cyclic voltammetric experiments. Equivalent circuits are proposed to fit the experimental data and the influence of electrode pretreatment has also been investigated.     

低温高氯酸水溶液体系中碲在金电极上的循环伏安和溶出伏安法研究

本文测定了20°～-60℃Te(Ⅳ)/Te(0)在金电极和HClO_4水溶液中的循环伏安图,证明了在常温下受吸附和扩散控制的还原过程在凝固介质中发生了变化,温度低于介质的凝固点时吸附作用受到抑止,扩散控制成为唯一的还原过程。根据不可逆循环伏安响应和Tafel作图,测定了还原阶的电荷传输系数α和速率常数k_s。碲的低温阳极溶出伏安法不仅能在液态溶液也能在凝固的电解质中进行。     

盐酸氨溴索在碳糊电极上阳极伏安法的研究

在０．５ ｍｏｌ／Ｌ Ｈ２ＳＯ４底液中，用碳糊电极阳极伏安法测定盐酸氨溴索，被测的阳极峰电位为１．１０Ｖ（ｖｓ．ＳＣＥ），另外，在０．４６Ｖ处还产生一对可逆的氧化还原峰。１．１０ Ｖ处的峰电流与盐酸氨溴索的浓度在３．９８×１０~（－７）～６．３４ × １０~（－５）ｍｏｌ／Ｌ范围内呈良好的线性关系，该方法的检出下限为３．０ × １０~（－８）ｍｏｌ／Ｌ。用标准加入法测得回收率范围为９２．８％～１０２％，ＲＳＤ为２．９％（ｎ＝１０）。对电极响应机理进行了初步探讨，氨溴索在１．１０ Ｖ处的氧化为不可逆过程，其氧化产物在０．４６０Ｖ处产生一对２电子２质子受扩散控制的可逆波，用该波也可进行定量测定并且干扰较少，但灵敏度略低。     

金在碳糊电极上的静电吸附及溶出伏安测定

阳极溶出伏安法测定金具有灵敏度高,操作简便等优点,但共存金属往往干扰测定,影响该方法的应用。为减少干扰,已有阴极溶出伏安法的报道。 作者曾采用修饰了三烷基叔胺的碳糊电极,通过开路萃取富集和介质交换,测定矿样中的金,并且发现,碳糊电极本身能在正电位下直接富集微量金,在阴极溶出伏安法中显示了     

络合吸附体系吸附性的研究

本文论述了研究络合吸附体系吸附性的重要意义,较详细地讨论了各种方法,包括微分电容曲线法、交流极谱法和计时电量法等在吸附性研究和吸附量测定中的应用。     

硅钼杂多阴离子薄膜修饰电极的研究和应用——线性扫描伏安法测定水中可溶性硅酸盐

本文研究了以玻碳电极为基体的1:12硅钼杂多酸根(SiMo_(12)O_(40)~(4-)简称12-MSA)修饰电极的制备及其电化学行为,将12-MSA电极应用于线性扫描伏安法测定天然水中可溶性硅酸盐,结果满意.硅浓度在8.0×10~(-7)～1.7×10~(-3)mol/L,相对标准偏差(n=7)为1.85％,加标回收率为98.2％～103.6％,SiMo_(12)电极具有优良的选择性和稳定性。     

锗（Ⅳ）─苯基荧光酮体系差分脉冲吸附伏安法的研究

在１．４１×１０－２ｍｏｌ／Ｌ的硫酸介质中，锗与苯基荧光酮试剂反应在－０．５７Ｖ（ＶＳ．ＳＣＥ）电位处产生灵敏的络合吸附波．用差分脉冲极谱法测定．该络合吸附波的峰高与锗（Ⅳ）浓度在３．２×１０－８ｍｏｌ／Ｌ－４．０×１０－７ｍｏｌ／Ｌ范围内成正比，检测下限是８．５×１０－９ｍｏｌ／Ｌ．本文详细讨论了测定的最佳条件及电极反应的机理，并用该法测定了人参中锗的含量。     

A study on the utility of bismuth-film electrodes for the determination of In(III) in the presence of Pb(II) and Cd(II) by square wave anodic stripping voltammetry

This work is an investigation into the utility of bismuth-film electrodes (BiFEs) for the determination of indium in the presence of cadmium and lead by square wave anodic stripping voltammetry (SWASV). The purpose of this study was to demonstrate that, after judicious choice of the associated chemical and instrumental conditions, it is possible to achieve satisfactory separation of the relevant stripping peak and, thus, to determine simultaneously trace concentrations of cadmium, lead and indium. It was conclusively demonstrated that a BiFE performed better than the equivalent mercury-film electrode (MFE) in this particular application.