ZnSe纳米带前驱物的化学合成和性质

通过水热法,在Zn片上直接生长ZnSe纳米带前驱物（ZnSe：en,en=ethylenediamine,乙二胺）.通过扫描电镜（SEM）.透射电镜（TEM）和X光散射（XRD）的分析,ZnSe纳米带前驱物具有较好的ZnSe材料的结构特征.SEM可以清晰地看到前驱物具有很好的带状结构,SEM和XRD实验则很好地标定了ZnSe的结构特征.室温吸收和低温光荧光也显示出前驱物的ZnSe结构特征.     

ZnSe薄膜的化学反应辅助热壁外延法生长及特性研究

本文通过将新型化学气相反应促进剂Zn(NH4)3Cl5引入到热壁外延系统中,以二元素单质Zn和Se为原料,直接在Si(111)衬底上生长了高质量的ZnSe晶体薄膜,薄膜成分接近理想化学计量比。研究了主要工艺参数对薄膜生长形貌和性能的影响。采用SEM、AFM、EDS和PL谱技术研究了生长的ZnSe薄膜的形貌、成分和发光特性。研究结果表明,热壁温度和生长时间是影响ZnSe薄膜形貌的主要因素;气相反应促进剂在薄膜生长和调节成分方面扮演了关键角色,Zn(NH4)3Cl5的存在使得Zn(g)和Se2(g)合成ZnSe晶体的反应转变为气固非一致反应,从而更容易获得近乎理想化学计量比的ZnSe薄膜。ZnSe薄膜在氦镉激光激发下,室温下PL谱由近带边发射和(VZn-ClSe)组合的SA发光组成,而在飞秒激光激发下,仅在481nm处显示出强烈的双光子发射峰。     

ZnO-Si不同退火条件对生长ZnSe薄膜的影响

研究了作为缓冲层的ZnO薄膜在不同的退火时间、退火温度下退火对Si衬底上生长ZnSe膜质量的影响。当溅射有ZnO膜的Si(111)衬底的退火条件变化时，从X射线衍射谱（XRD）和光致发光谱（PL）中可见，ZnSe(111)膜的晶体质量有较大的变化。变温的PL谱表明，Si衬底上生长的具有ZnO缓冲层的ZnSe膜的近带边发射峰起源于自由激子发射。     

飞秒激光诱导硒化锌晶体表面自组织生长纳米结构

 以250 kHz高重复频率钛宝石飞秒激光聚焦到硒化锌晶体表面,利用扫描电子显微镜观测飞秒激光辐照后晶体的表面结构。发现线偏振激光辐照的区域形成了自组织周期性纳米结构,其周期为160 nm左右,并且可以通过改变激光的偏振方向调节纳米光栅结构的取向;当晶体相对于激光光束以10 mm/s速度移动,经激光扫描后,在晶体表面形成了长程类布拉格光栅。当飞秒激光光束为圆偏振光时,辐照区域形成均匀的纳米颗粒。     

基于硒化锌薄膜法的食源性致病菌原位红外光谱检测

食源性致病菌是引发和威胁公众健康的主要因素之一.由于食源性致病菌种类繁多,常规检测方法复杂耗时要求高,因此迫切需要一种更加快速精确的致病菌检测技术.在传统红外光谱检测致病菌的流程中,如经典的溴化钾压片法,除了压片本身的操作之外通常还需对样品进行冷冻干燥(约需2 d)等耗时前处理过程,因而不利于高通量快速检测.本研究利用...     

ZnSe、ZnS量子点的可控合成与表征

采用改进后的合成方法,以Se和ZnO粉末为原料,在十六胺(HDA)、月桂酸(LA)和三辛基膦(TOP)有机溶剂体系中合成了胶体ZnSe和ZnS量子点。主要研究了溶剂配比、反应温度及生长时间对ZnSe量子点粒径和光学性质的影响。结果表明:制得的ZnSe和ZnS量子点均是纤锌矿型结构,且具有较好的尺寸均匀性、分散性及荧光特性。粒子直径可控制在4.5~8 nm范围内。采用参数n(ZnO) : n(HDA) : n(LA)=1 : 2.1 : 5.2,c(TOPSe)=1 mol/L,在280 ℃成核,240 ℃生长条件下合成的ZnSe量子点具有最佳的尺寸范围,并且随着生长时间的延长,粒径变大,荧光发射峰明显红移。     

Fabrication of ZnSe/C Hollow Polyhedrons for Lithium Storage

ZnSe has got extensive attention for high-performance LIBs anode due to its remarkable theoretical capacity and environmental friendliness. Nevertheless, the large volume variation for the ZnSe in the discharge/charge processes brings about rapid capacity fading and poor rate performance. Herein, ZnSe/C hollow polyhedrons are successfully synthesized by selenization of zeolitic imidazolate framework-8 (ZIF-8) with resorcinol-formaldehyde (RF) coating. The protection of C layer derived from RF coating layer and Ostwald ripening during the process of selenization play important roles in promoting formation of ZnSe/C hollow polyhedrons. The ZnSe/C hollow polyhedrons exhibit good rate performance and long-term cycle stability (345 mAh g⁻¹ up to 1000 cycles at 1 A g⁻¹) for lithium ion batteries (LIBs) anode. The improved electrochemical performance is benefit from the unique ZnSe/C hollow structure, in which the hollow structure can effectively avoid terrible volume expansion, and the thin ZnSe/C shell can not only provide adequate diffusion paths of lithium ions and but also enhance the electronic conductivity.     

Effect of annealing in N2 atmosphere on net acceptor concentration in ZnSe:N grown by MOCVD

Annealing effect on net acceptor concentration in ZnSe:N is investigated. ZnSe:N homo-epitaxial layer was grown at 823 K by MOCVD using ammonia (NH₃) as a dopant source. Photoluminescence (PL) spectra measured on as-grown layer exhibited the strong deep donor–acceptor pair (D^dAP) emission and the weak I₁^N emission line. In order to enhance the activation of nitrogen in ZnSe epitaxial layer, sample was annealed at the 823 K in nitrogen (N₂) and hydrogen (H₂) atmosphere. Only the annealing in nitrogen atmosphere increased I₁^N emission intensity indicate the activation of nitrogen acceptor. And net acceptor concentration was estimated to be 3 × 10¹⁷cm⁻³ by C–V measurements. This activation mechanism is interpreted as hydrogen is released from N–H bonds during annealing in nitrogen atmosphere.     

浅ZnCdSe/ZnSe量子阱的光泵受激发射

本文主要研究浅ZnCdSe/ZnSe单量子阱在77K温度下的光致发光。在不同激发密度下,讨论了该结构的发光机制,把77K温度下的受激发射归结为是激子-激子散射所引起的。文中还分析了在浅ZnCdSe/ZnSe量子阱中能够实现与激子相关的受激发射的原因。     

Zn0.8Cd0.2Se-ZnSe应变层超晶格的激子发光和受激发射

本文用MOCVD技术在GaAs衬底上成功地制备了具有波导结构的Zn0.8Cd0.2Se-ZnSe应变层超晶格样品,在77K温度的光致发光光谱中观测到n=1的重空穴和轻空穴激子的辐射复合。在光泵浦下,在波导结构的F-P腔中观测到具有多模结构的受激发射,受激发射谱中的不同模具有不同的阈值功率密度;时间延迟衰减曲线的半宽度越窄,阈值光强越大.