ZnCdSe-ZnSe组合超晶格的受激发射

77K下首次观测到了来自ZnCdSe-ZnSe组合超晶格的受激发射过程。在组合超晶格中由于载流子转移过程的存在,受激发射出现在具有宽阱的超晶格中。     

Exciton reflection of ZnSe single crystals with account for the effect of the surface electric field

The mechanism of formation of an exciton reflection band is analyzed using a multilayer model of the near-surface region of ZnSe single crystals. It is shown that the appearance of a fine structure (a spike) in the reflection spectra at large damping parameters of the exciton is due to the surface electric field and the Stark exciton effect. The exciton-resonance energies and the damping parameters of free excitons for temperatures ranging from 12 to 100 K are determined by comparing experimental and predicted contours of the reflection spectrum. The surface concentration of charged centers and the characteristics of the space-charge region are evaluated within the framework of the model employed. Brest Polytechnic Institute, 267, Moskovskaya Str., Brest, 224017, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 3, pp. 401–407, May–June, 1999.     

ZnSe单晶生长及性能研究

采用物理气相输运法对ZnSe(4N)多晶原料在850℃±10℃进行提纯,再用高压坩埚下降法在1530℃、氩气保护气氛下生长出高质量ZnSe单晶体.研究了提纯过程温度的选择以及氧含量和压力对于晶体生长的影响.对生长出的单晶体进行均匀性测试表明ZnSe单晶完整性和均匀性良好.对ZnSe单晶进行光学性能测试分析表明ZnSe单晶的折射率高,吸收系数低,红外透过率大于70;.     

ZnSe、ZnS量子点的可控合成与表征

采用改进后的合成方法,以Se和ZnO粉末为原料,在十六胺(HDA)、月桂酸(LA)和三辛基膦(TOP)有机溶剂体系中合成了胶体ZnSe和ZnS量子点。主要研究了溶剂配比、反应温度及生长时间对ZnSe量子点粒径和光学性质的影响。结果表明:制得的ZnSe和ZnS量子点均是纤锌矿型结构,且具有较好的尺寸均匀性、分散性及荧光特性。粒子直径可控制在4.5~8 nm范围内。采用参数n(ZnO) : n(HDA) : n(LA)=1 : 2.1 : 5.2,c(TOPSe)=1 mol/L,在280 ℃成核,240 ℃生长条件下合成的ZnSe量子点具有最佳的尺寸范围,并且随着生长时间的延长,粒径变大,荧光发射峰明显红移。     

生物荧光标记物的新型材料——过渡金属离子掺杂的ZnS、ZnSe量子点

目前研究最成熟的是CdSe量子点,然而由于其包含有毒的重金属Cd离子使其在未来的生物、医学、药学等应用中存在着隐患,因此开发新的无镉量子点作为基质材料用于生物荧光标识成为当务之急．本文在介绍量子点作为荧光生物标记物研究进展的同时,重点阐述了过渡金属离子掺杂的ZnS、ZnSe量子点相对于非掺杂的含重金属的量子点的本质优越性,以及作为一种新型的生物荧光标记物的研究意义和进展,相信其将会在未来的生物医学领域大有作为．     

化学气相沉积法制备ZnSe微球

采用化学气相沉积方法,以MiSe2为前驱体,制备出尺寸均匀、分散度好的ZnSe微球.通过XRD、EDS和FESEM对产物的结构、成分和形貌进行了测试与表征.结果表明:所得ZnSe微球为立方闪锌矿结构,直径在800～1000 nm之间,具有近于理想的化学计量比.变温光致发光谱研究表明,ZnSe微球在550～640 nm处存在与Zn空位及杂质能级相关的发光峰.     

非简谐振动和形变对ZnSe类石墨烯德拜温度热容量以及极性的影响

应用哈里森(Harrison)键联轨道法和固体物理理论和方法,考虑到原子的高阶非简谐振动,计算了ZnSe类石墨烯化合物的σ键和π键的极性、简谐系数和非简谐系数,得到它的德拜温度和定容热容量随温度变化的解析式以及形变引起的极性参量的改变量,探讨了形变对ZnSe类石墨烯极性的影响,并讨论了原子非简谐振动对化合物热力学性质的影响,结果表明:在300 K到1600 K温度区间内,简谐近似下,ZnSe的德拜温度为常量,热容量随着温度的升高呈非线性增大,其中温度较低时变化较快,温度较高时变化较慢并随着温度的升高而趋于常量.考虑到非简谐项后,德拜温度随着温度升高而增大,几乎为正比关系,而热容量的值比简谐近似的值有所减小,与第一非简谐项的影响相比,第二非简谐项的影响很小.形变对ZnSe类石墨烯的极性有重要的影响,在它的几种形变中,剪切形变对σ键的极性的影响最大,而键长形变对π键的极性的影响最小.温度愈高,非简谐效应愈显著.     

Room‐temperature terahertz emission from ZnSe‐based quantum cascade structures: A simulation study

We identified conditions for room‐temperature operation of terahertz quantum cascade lasers (THz QCLs) where variable barrier heights are used on ZnSe/Zn_1–xMg_x Se material systems. The THz QCL devices are based on three‐level two‐well design schemes. The THz QCL lasers with alternating quantum barriers with different heights were compared with THz QCL laser structures with fixed quantum barrier heights. It is found that the THz QCL device with novel design employing variable barrier heights achieved the terahertz emission of about 1.45 THz at room‐temperature (300 K), and has improved laser performance due to the suppression of thermally activated carrier leakage via higher‐energy parasitic levels. Thus, THz QCL devices employing the design with variable barrier heights may lead to future improvements of the operating temperature and performance of THz QCL lasers. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

A Simple Strategy to Prepare Colloidal Cu‐Doped ZnSe(S) Green Emitter Nanocrystals in Aqueous Media

A novel and simple method is described for preparing colloidal Cu‐doped ZnSe(S) quantum dots (QDs) in aqueous media by introducing copper ions using the same method as to prepare colloidal ZnSe(S). More specifically, the Cu‐doped ZnSe(S) are prepared through the nucleation‐doping method in the presence of 3‐mercaptopropionic acid as stabilizers using zinc perchlorate, copper sulphate, and NaHSe as precursors. Confirmation of the preparation of Cu‐doped ZnSe(S) nanocrystals (NCs) is done with absorption and emission spectroscopies (UV–vis and PL) as the QDs show intensive green emissions. The reduction of ions Cu²⁺ to Cu⁺ is confirmed by using electron paramagnetic resonance (EPR), in which Cu⁺ ions are silent. The size determination is performed by using transmission electron microscopy (TEM) and dynamic light scattering (DLS), resulting in Cu‐doped ZnSe(S) particles with a mean diameter of 4.6 ± 3.5 nm. The excellent stability observed for the nanoparticles overcomes the intrinsic instability of traditional aqueous Cu‐doped ZnSe(S) NCs.     

硫脲修饰ZnSe:Cu量子点的水相合成及荧光特性

以3-巯基丙酸为稳定剂在水相中合成了Cu掺杂的ZnSe量子点(QDs), 并利用硫脲(CH₄N₂S)对其进行表面修饰, 制备出核壳结构的ZnSe:Cu/ZnS 量子点. 制得的量子点呈闪锌矿结构, 尺寸约为5 nm, 有较好的分散性, 其荧光发射峰在460 nm左右. 经CH₄N₂S修饰后, 量子点表面形成了宽禁带的ZnS包覆层, 将电子和空穴限域在了ZnSe:Cu 核内, 减少了表面发生非辐射复合的载流子, 显著提高了量子点的荧光强度. 与Na₂S、硫代乙酰胺(TAA)等常用硫源相比, 以CH₄N₂S为硫源制得的ZnSe:Cu/ZnS 量子点壳层厚度可控, 表面钝化效果更好, 显示出更佳的荧光效率和稳定性. ZnSe:Cu/ZnS 量子点经过紫外线照射后消除了表面的悬空键, 进一步提高了其量子产率, 最终获到了具有较好荧光性质的ZnSe:Cu/ZnS量子点.