一种新型加氢精制磷化钨催化剂的研究

采用偏钨酸铵{(NH4)2W4O13·18H2O}与磷酸氢二铵{(NH4)2HPO4}溶解、蒸发、焙烧和程序升温还原的方法,制备了无负载WP催化剂.利用XRD和BET对合成样品进行表征,采用TG/DTA方法对催化剂前体的氢还原过程进行考察.以制备的磷化钨为活性组分,Al2O3为稀释剂,在空速为4h-1、氢油比为1000、反应压力为3.0MPa、不同反应温度的条件下,对吡啶加氢脱氮、噻吩加氢脱硫和模型化合物为二苯并噻吩(含3000ppm硫)、喹啉(含2000ppm磷)和环己烷(溶剂)加氢脱硫(HDS)和加氢脱氮(HDN)反应活性进行测定,结果表明:无负载WP催化剂有相当的活性,其对大分子脱氮、脱硫活性明显优于对小分子脱氮、脱硫活性.     

高温高压下碳化钨晶体的结构、力学、电子、光学以及热力学性能的第一性原理计算

本文利用密度泛函理论中的广义梯度近似对碳化钨晶体的三种结构(碳化钨相、闪锌矿相以及纤锌矿相)进行了优化,得到能量最低的稳定构型,并在此基础上计算了它的力学、电子、光学和高温高压下的热力学性质.研究表明:在0～300 GPa压力范围内,碳化钨相具有最高的稳定性.同时,高压下碳化钨相的弹性常数满足Born-Huang准则,且0 GPa和300 GPa下的声子色散没有虚频,证明了高压下碳化钨相的静力学稳定性和动力学稳定性.电子性质表明了碳化钨的金属性.光学性质表明碳化钨在高能区很难吸收光.热力学性质的研究表明:体积比V/V_0对压强的变化更敏感;高温时C_V曲线近似一条直线;给定压强下热膨胀系数α在600 K温度以上增长非常缓慢;压强对德拜温度Θ_D的影响较大;在低压下格林艾森系数γ的变化较大.     

Comparison of electrochromic characteristics of electrochromic device upon various sintering methods of sol-gel based WO3 electrode

Tungsten oxide is an electrochromic material, from which thin films are conventionally fabricated via heat treatment. Here, we develop a flash light sintering method to reduce sintering time; sintering delivers instantaneous photon energy created via the photothermal effect. The electrochromic efficiency of device with a flash light-sintered electrode was 88.50 cm²/C, about 1.46-fold greater than that of the device with a heat-sintered electrode. The diffusion coefficients of the former device were 1.35- and 1.46-fold greater than those of the latter device during bleaching and coloring, respectively. Therefore, a new way of sintering electrode was studied to show that the device with flash light–sintered electrode demonstrate better electrochromic performance than the device with heat-sintered one by enabling amorphous phase formation.     

Highly uniform electrochromic tungsten oxide thin films deposited by e-beam evaporation for energy saving systems

In the last few decades, there has been a surge of interest in using tungsten oxide thin films as an active layer of electrochromic device. These devices have several practical applications such as smart window of buildings and automobile glazing for energy saving. The main objective of this work was to construct highly homogeneous and uniform e-beam evaporated amorphous WO_3-x based films into electrochromic devices, which were fully characterized for switching speed, coloration efficiencies and cycling voltammetry responses. Fabricated devices contain indium doped transparent oxide coated glass as the transparent conductive electrode, ～200?nm thickness of WO_3-x as the cathodically coloring material and a lithium perchlorate based conducting gel electrolyte. X-ray diffraction patterns indicate that all as-deposited films are amorphous. Experimental results showed that both solid and liquid electrolyte electrochromic devices are initially very transparent that exhibit perfect optical modulation and coloration efficiency (up to 68.7?cm²/C and 52.6?cm²/C at 630?nm, respectively) due to easier intercalation of the Li⁺ within their structure. One of the more significant findings to emerge from this study is that e-beam coated electrochromic devices based on tungsten oxide thin films showed superior performance among to other coating methods. Therefore, excellent reversibility of color change behavior is attractive for pertinent use in electrochromic energy storage devices.     

Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode

The resistive switching characteristics of sputtered deposited molybdenum disulphide (MoS₂) thin film has been investigated in Cu/MoS₂/W₂N stack configuration for Resistive Random Access Memory (ReRAM) application. The benefits of incorporating tungsten nitride (W₂N) as a bottom electrode material were demonstrate by stability in operating voltages, good endurance (10³ cycles) and long non-volatile retention (10³?s) characteristics. Resistive switching properties in Cu/MoS₂/W₂N structure are induced by the formation/disruption of Cu conducting filaments in MoS₂ thin film. Ohmic law and space charge limited current (SCLC) are observed as dominant conduction mechanism in low resistance state (LRS) and high resistance state (HRS) respectively. This study suggests the application of MoS₂ thin films with W₂N bottom electrode for next generation non-volatile ReRAM application.