Growth process and structure of Fe/Si(1 1 1) ultrathin film: Transition from single-domain Fe(1 1 1)/Si(1 1 1) to β-FeSi2

The growth processes and structures of Fe/Si(1 1 1) ultrathin films grown by solid-phase reactive epitaxy were investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS). It has been revealed that the Fe(1 1 1) thin films with a bcc-type structure were epitaxially grown on a Si(1 1 1) crystal, even at room temperature, and formed a single-domain structure: Fe(1 1 1)∥Si(1 1 1). After annealing at above 600 °C, the Fe(1 1 1) films were transformed into β-FeSi₂ via the collapse of the bcc-type structure to an amorphous or polycrystalline structure. On the basis of the thickness dependences of the growth processes, this phenomenon was discussed in terms of the diffusion of Si into Fe thin films.     

Eu- and Yb-induced reconstructions on a vicinal Si(1 0 0) surface

Early stages of rare-earth metal (Yb and Eu) growth on a vicinal, single-domain Si(1 0 0)2 × 1 surface have been studied in the coverage range of 0.1-0.3 monolayer (ML) by low energy electron diffraction, scanning tunneling microscopy, and synchrotron radiation photoemission spectroscopy. We show that Yb induces the 2 × 3 periodicity in the whole range of coverage studied. The 2 × 3 reconstruction coexists with the local 3 × 2/4 × 2 structure at about 0.2 ML of Yb. In contrast, Eu forms the 3 × 2 periodicity at 0.1-0.2 ML, whereas this structure is converted into the 2 × 3 phase at about 0.3 ML. The atomic arrangement and electronic properties of these reconstructions and the adsorbate-mediated modification of surface morphology are investigated.     

线弹簧模型法在含表面裂纹球壳中的应用

本文应用线弹簧模型法,基于Sih.G.C.含二维裂纹球壳理论建立了含表面裂纹球壳的控制方程,采用数值方法选取位移试函数及合理地处理了对偶奇异积分方程使计算大为简化,通过电算实现了计算求解过程,从而获得了球壳表面裂纹前沿各点的应力强度因子之值。 最后将计算结果与考虑“膨胀效应”后的Ncwoun-Raju 解进行了比较,同时研究了曲率因素对表面裂纹线弹性断裂性态的影响。     

激子复合区厚度对有机磁效应的影响

在常规型有机发光二极管的基础上, 通过改变发光层tri-(8-hydroxyquinoline) aluminum (III) (Alq₃)厚度, 研究了激子复合区厚度对有机发光二极管磁效应的影响.测量了器件在不同温度及偏压下电致发光及注入电流在外加磁场作用下的变化, 着重研究了低温下的有机磁电导效应和有机磁电致发光效应.实验发现, 低温(50 K)高磁场 (500 mT)下, 器件表现出随Alq₃厚度的减薄, 磁电导值由正到负再到正的非单调变化.利用磁场调控的超精细相互作用、 磁场抑制的三重态激子-电荷反应以及激子在界面的淬灭效应, 对有机磁电导在低温下表现出的现象进行了定性的解释.实验结果表明, 通过改变激子复合区的厚度, 可以实现对激子浓度的有效调节, 进而实现对有机磁电导和磁电致发光效应的调节. 该研究进一步丰富了有机磁效应的实验现象, 同时提供了一种调控有机磁效应的手段. 关键词： 激子复合区 激子浓度 有机磁电导 有机磁电致发光     

Measurement of the impedance of very thin superconducting YBaCuO films at 10 GHz with a cavity perturbation method between 4 and 300 K

We have measured the complex film impedance 1/σd (σ conductivity, d film thickness) of three YBaCuO thin films with d = 44, 115, and 168 nm on MgO substrates at 10.2 GHz in the temperature range between 300 and 4 K. Below T_c, the experimental results are discussed in terms of the two-fluid model and the BCS theory. The residual resistance decreases with the film thickness. The thinnest film has a residual surface resistance of 3 · 10^?4 Ω. For this film, the complex microwave conductivity is calculated and compared with the models. Apart from the residual resistance, the measured conductivity is in agreement with the peak caused by the energy gap of the BCS theory. All measurements were performed with a cavity perturbation method which we have to our knowledge applied for the first time to superconducting thin films. The method allows to determine the complex impedance of films with arbitrary thickness. In particular, films with thicknesses small compared to the skin depth δ or the London penetration depth λ can be measured. Therefore, we are able to measure the impedance both in the normal and superconducting state.     

多辊轧机冷轧技术在靶材料制备中的应用

 叙述了多辊轧机轧制金属薄膜原理,以Ti膜制备为例,借助多辊轧机冷轧技术进行1.5 μm厚钛薄带的制备工艺研究。对薄膜的特性测试结果表明：工作辊的表面粗糙度对于轧制薄膜的表面粗糙度的影响很大,降低工作辊表面的粗糙度可以得到粗糙度为25.2 nm的金属薄膜。     

Heterogeneous Chemiluminescence of Crystal Phosphors on X‐Ray or UV Irradiation

Using a highvacuum assembly with molecular beams and setups with an implemented atom probe, we investigated atomic and molecular adsorption luminescence of the oxides CaOBi and MgO in O and O₂ beams and also radicalrecombination luminescence excited by H and O atoms in ZnS and in ZnS,CdS samples activated with silver, copper, and the rareearth element Tm. It is established that exposure to UV light and xray radiation of the CaOBi, MgO, and ZnSTm samples, where the mechanism of direct excitation of heterogeneous chemiluminescence (HCL) is realized, does not influence the characteristics of the heterogeneous chemiluminescence, whereas similar exposure of the ZnS,CdSCu,Al and ZnS,CdSAg samples and of selfactivated ZnS, in which the excitation of heterogeneous chemiluminescence is due to the ionization of the lattice, leads to an increase in the intensity of heterogeneous chemiluminescence up to five orders of magnitude. The mechanisms of the phenomenon are considered.     

高Z等离子体中的双电子复合与电子碰撞激发

 采用准相对论性Hartree-Fock-Relativistic方法与不可分辨跃迁组模型相结合,对Au和Ta元素的类Ni离子的双电子复合速率,以及Au元素类Cu离子的电子碰撞激发速率进行了计算。计算结果表明,对于Au类Ni离子的3d¹⁰-3d⁹4l5f-3d¹⁰4l双电子复合过程以及类Cu离子的3d¹⁰4l-3d⁹4l5f电子碰撞激发过程,当电子温度高于1.0 keV时,电子离子碰撞激发速率随电子温度增加而增加,双电子复合速率随电子温度增加而减小,并且电子碰撞激发对谱线辐射的贡献要比双电子复合大得多。     

Characterization of electrodeposited nickel film surfaces using atomic force microscopy

Microstructures of nickel surfaces electrodeposited on indium tin oxides coated glasses are investigated using atomic force microscopy. The fractal dimension D and Hurst exponent H of the nickel surface images are determined from a frequency analysis method proposed by Aguilar et al. [J. Microsc. 172 (1993) 233] and from Hurst rescaled range analysis. The two methods are found to give the same value of the fractal dimension D∼2.0. The roughness exponent α and growth exponent β that characterize scaling behaviors of the surface growth in electrodeposition are calculated using the height-difference correlation function and interface width in Fourier space. The exponents of α∼1.0 and β∼0.8 show that the surface growth does not belong to the universality classes theoretically predicted by statistical growth models.