全文获取类型
收费全文 | 1944篇 |
免费 | 34篇 |
国内免费 | 118篇 |
专业分类
化学 | 401篇 |
晶体学 | 21篇 |
力学 | 43篇 |
综合类 | 2篇 |
数学 | 566篇 |
物理学 | 595篇 |
综合类 | 468篇 |
出版年
2024年 | 13篇 |
2023年 | 127篇 |
2022年 | 28篇 |
2021年 | 38篇 |
2020年 | 39篇 |
2019年 | 37篇 |
2018年 | 32篇 |
2017年 | 61篇 |
2016年 | 40篇 |
2015年 | 49篇 |
2014年 | 109篇 |
2013年 | 131篇 |
2012年 | 152篇 |
2011年 | 161篇 |
2010年 | 142篇 |
2009年 | 85篇 |
2008年 | 64篇 |
2007年 | 67篇 |
2006年 | 66篇 |
2005年 | 55篇 |
2004年 | 52篇 |
2003年 | 39篇 |
2002年 | 40篇 |
2001年 | 40篇 |
2000年 | 54篇 |
1999年 | 31篇 |
1998年 | 34篇 |
1997年 | 30篇 |
1996年 | 28篇 |
1995年 | 24篇 |
1994年 | 29篇 |
1993年 | 15篇 |
1992年 | 19篇 |
1991年 | 11篇 |
1990年 | 15篇 |
1989年 | 16篇 |
1988年 | 16篇 |
1987年 | 10篇 |
1986年 | 3篇 |
1985年 | 19篇 |
1984年 | 11篇 |
1983年 | 2篇 |
1982年 | 13篇 |
1981年 | 5篇 |
1980年 | 11篇 |
1979年 | 15篇 |
1978年 | 12篇 |
1977年 | 3篇 |
1974年 | 1篇 |
1973年 | 1篇 |
排序方式: 共有2096条查询结果,搜索用时 0 毫秒
181.
一类三阶拟线性发展方程的整体解 总被引:1,自引:0,他引:1
杨志坚 《高校应用数学学报(A辑)》1998,13(1):31-38
本文研究一类三阶拟线性发展方程utt-Δut+ut=ni=1xiσi(uxi),(x,t)∈Ω×(0,T)的初边值问题,其中ΩRn(n≥1)为一有界域.证明了只要σi(s)∈C1,σ′i(s)(i=1,…,n)有界并且初始函数满足一定的条件,则上述问题存在唯一的整体弱解. 相似文献
182.
D. Dimova-Malinovska 《Journal of luminescence》1998,80(1-4):207-211
Porous silicon/c-Si heterostructures have been formed by the method of stain etching.The properties of light emitting diodes (LED) and solar cells have been studied. The transport mechanism of the diode has been investigated from the current–voltage characteristics measured at different temperatures (296–380 K). A model based on multi-step tunneling of carriers at reverse and low forward bias (<1 V) and on field tunneling across a narrow barrier at higher forward bias (>1.5 V) is proposed for the LED. In the case of the solar cells the porous silicon is formed in between the fingers of the front grid contact. Application of porous silicon in solar cells results in an increase of the short-circuit current and efficiency of the cells by about 30%. 相似文献
183.
The present experimental status in the search for neutrinoless double beta decay is reviewed, with emphasis on the first indication for neutrinoless double beta decay found in the HEIDELBERG-MOSCOW experiment, giving first evidence for lepton number violation and a Majorana nature of the neutrinos. Future perspectives of the field are briefly outlined. 相似文献
184.
方学荣 《新疆师范大学学报(自然科学版)》1997,(2)
本文介绍了“问题解决”的意义及其在世界各国的概况,通过例题阐述了它对培养和发展学生智力的作用,并分析了它与高校“数学建模”的密切关系,指出其在进行素质教育与培养实用人才过程的价值. 相似文献
185.
A. Cacciani F. Fabbri D. Ricci P. Rosati R. Marquedant E. Smith 《Il Nuovo Cimento C》1990,13(1):163-168
Summary An observing station to detect low-degree global solar oscillations is already operational at Jet Propulsion Laboratory (Pasadena,
CA-USA). In collaboration with Reparto Raggi Cosmici, I.F.S.I.-C.N.R., a second station for continuative measurements of such
oscillations has recently been installed and successfully tested in Rome. The high transmission and stability of the magneto-optical
filter (MOF) coupled with the lock-in amplifier technique allow analogic and real time detection of oscillation modes with
a noise level of only a few cm/s. We show observing runs and estimates of the signal-to-noise ratio in time and frequency
domains. Routine observations will establish whether the MOF sensitivity and stability is suitable to detect stellar oscillations.
To speed up publication, the proofs were not sent to the authors and were supervised by the Scientific Committee. 相似文献
186.
一类半线性卷积积分微分方程的初边值问题 总被引:1,自引:0,他引:1
张卫国 《高校应用数学学报(A辑)》1995,(4):403-410
本文考虑具线性粘弹性杆受粘性阻尼的横振动所引出的积分微分方程的初边值问题,在某些条件下,得到了解的存在性、唯一性、稳定性和正则性的结论。 相似文献
187.
本文主要讨论高维空间非线性波动方程的Cauchy问题整体解的非存在性,我们证明对Uu-△u=f(u),f(u)=c|u|p-1u,当1<p≥时,若初始能量非正,则无论初值数据的ck-范数(连续空间范数)多么小,解按Ck-范数或按Hs(Rn)(S≥1)都在有限时间内Blowup,并且有相同的生命跨度. 相似文献
188.
通过对已有补偿问题的模型进行总结,抽象与升华,本文建立了Banach空间中一般形式多阶段有补偿随机规划问题的一个非线性模型,使已有所有的补偿问题均成为其特例;然后利用可测集值映射理论,正规凸的被积函数的性质及文[8」中的结论等,讨论了所给模型的适定性与其基本性质. 相似文献
189.
B. R. Frieden 《Optics Communications》1998,150(1-6):15-21
We show how, in principle, to solve the ‘blind deconvolution' problem. This is in the context of the problem of imaging through atmospheric turbulence. The approach is digital but not iterative, and requires as input data but two short-exposure intensity images, without the need for reference point sources. By taking the Fourier transform of each image and dividing, a set of linear equations is generated whose unknowns are sampled values of the two random point spread functions that degraded the images. An oversampling by 50% in Fourier space equalizes the number of unknowns and independent equations. With some prior knowledge of spread function support, and in the absence of added noise of image detection, the inverted equations give exact solutions. The two observed images are then inverse filtered to reconstruct the object. 相似文献
190.
K. Ramamoorthy M. Jayachandran K. Sankaranarayanan Pankaj Misra L. M. Kukreja C. Sanjeeviraja 《Current Applied Physics》2004,4(6):679-684
Intrinsic epitaxial zinc oxide (epi-ZnO) thin films were grown by laser-molecular beam epitaxy (L-MBE), i.e., pulsed laser deposition (PLD) technique using Johnson Matthey “specpure”-grade ZnO pellets. The effects of substrate temperatures on ZnO thin film growth, electrical conductivity (σ), mobility (μ) and carrier concentration (n) were studied. As well as the feasibility of developing high quality conducting oxide thin films was also studied simultaneously. The highest conductivity was found for optimized epi-ZnO thin films is σ=0.06×103 ohm−1 cm−1 (n-type) (which is almost at the edge of semiconductivity range), carrier density n=0.316×1019 cm−3 and mobility μ=98 cm2/V s. The electrical studies further confirmed the semiconductor characteristics of epi-n-ZnO thin films. The relationship between the optical and electrical properties were also graphically enumerated. The electrical parameter values for the films were calculated, graphically enumerated and tabulated. As a novelty point of view, we have concluded that without doping and annealing, we have obtained optimum electrical conductivity with high optical transparency (95%) for as deposited ZnO thin films using PLD. Also, this is the first time that we have applied PLD made ZnO thin films to iso-, hetero-semiconductor–insulator–semiconductor (SIS) type solar cells as transparent conducting oxide (TCO) window layer. We hope that surely these data be helpful either as a scientific or technical basis in the semiconductor processing. 相似文献