Enhancement of the emission yield of silicon nanocrystals in silica due to surface passivation

The ability of surface passivation to enhance the photoluminescence (PL) emission of Si nanocrystals in SiO₂ has been investigated. Silicon precipitation in implanted samples takes place in a time scale of few minutes at 1100°C. For longer annealing at the same temperature, the PL intensity of the Si nanocrystals increases and eventually reaches saturation, while it correlates inversely with the amount of Si dangling bonds at the Si–SiO₂ interface (P_b centers), as measured by electron spin resonance. This combined behavior is independent on the silica matrix properties, implantation profiles and annealing atmosphere and duration. The observation that the light emission enhancement is directly related to the annealing of P_b centers is confirmed by treatment in forming gas. This mild hydrogenation at much lower temperature (450°C) leads to a complete passivation of the P_b defects, increasing at the same time the PL yield and the lifetime.     

超短脉冲激光微束对细胞作用的研究

本文详细地介绍了我们自己设计和安装的一个Nd:YAG超短脉冲激光微束系统,该系统分成二个部分:激光源和显微镜。由电光调Q非稳腔Nd:YAG激光倍频后得到355nm紫外光进入显微镜并由物镜聚焦。同时,这超短脉冲激光微束照射在细胞上并且在细胞上产生一个可以自恢复的小孔。在文中我们还讨论了超短脉冲激光微束与细胞之间作用效应及机理。     

Unique edge structure and stability of fabricated dimer islands on Si(001)

The edge structure and stability of monolayer-high islands fabricated on Si(001) surfaces by scanning tunneling microscopy have been analyzed theoretically. In contrast to the edges of similar islands grown by depositing Si, the properties of edges of fabricated islands are determined by the length of the trench of dimers that are removed to create the island. We demonstrate the possibility of controlling the edge structure, and thus the stability, through a selective process of atom removal.     

Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 °C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu_2−xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm² light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.     

Investigation of sulfonated poly(ether ether ketone sulfone)/heteropolyacid composite membranes for high temperature fuel cell applications

The sulfonated poly(ether ether ketone sulfone) (SPEEKS)/heteropolyacid (HPA) composite membranes with different HPA content in SPEEKS copolymers matrix with different degree of sulfonation (DS) were investigated for high temperature proton exchange membrane fuel cells. Composite membranes were characterized by Fourier transfer infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). FTIR band shifts suggested that the sulfonic acid groups on the copolymer backbone strongly interact with HPA particles. SEM pictures showed that the HPA particles were uniformly distributed throughout the SPEEKS membranes matrix and particle sizes decreased with the increment of copolymers' DS. The holes were not found in SPEEKS‐4/HPA30 (consisting of 70% SPEEKS copolymers with DS = 0.8 and 30% HPA) composite membrane after composite membranes were treated with boiling water for 24 h. Thermal stabilities of the composite membranes were better than those of pure sulfonated copolymers membranes. Although the composite membranes possessed lower water uptake, it exhibited higher proton conductivity for SPEEKS‐4/HPA30 especially at high temperature (above 100 °C). Its proton conductivity linearly increased from 0.068 S/cm at 25 °C to 0.095 S/cm at 120 °C, which was higher than 0.06 S/cm of Nafion 117. In contrast, proton conductivity of pure SPEEKS‐4 membrane only increased from 0.062 S/cm at 25 °C to 0.078 S/cm at 80 °C. At 120 °C, proton conductivity decreased to poor 0.073 S/cm. The result indicated that composite membranes exhibited high proton conductivity at high temperature. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 1967–1978, 2006     

Electrocatalytic activity of ordered intermetallic PtSb for methanol electro-oxidation

Ordered intermetallic PtSb had been synthesized by arc-melted and then sintering treatment. The electro-oxidation of liquid methanol on PtSb was investigated at room temperature by cyclic voltammetry and chronoamperometry. The results are compared to those at a polycrystalline platinum electrode surface. It was found that PtSb intermetallic was catalytically more active than pure platinum according to the onset potential and current density. X-ray diffraction (XRD) and XPS technologies had been used to investigate the crystal structure and electron effect.     

SIMS analysis of residual gas elements with a Cameca IMS-6f ion microprobe

In this paper, we present experimental data for SIMS analysis of residual gas elements (RGEs) with a Cameca IMS-6f ion microprobe. We considered a simple experimental technique, which provides an effective separation of the secondary ions, sputtered from the bulk of a target, and from the molecules, adsorbed on the analyzed surface from the residual atmosphere. The technique needs the sputtering yield of one monolayer (ML) per second to be applied. The method improves (in more than one order of magnitude) the detection limit for RGEs in SIMS analysis, and simultaneously, provides information about the residual atmosphere at the sample surface and in the main chamber of the experimental instrument. The method provides a calibration method for an ion gauge, and can be used for SIMS analysis with a gas (O₂) flooding.     

XRR and GISAXS study of silicon oxynitride films

Thin films of silicon oxynitride have largely replaced pure silicon oxide films as gate and tunnel oxide films in modern technology due to their superior properties in terms of efficiency as boron barrier, resistance to electrical stress and high dielectric strength. A single chamber system for plasma enhanced chemical vapor deposition was employed to deposit different films of SiO_xN_yH_z with 0.85 < x < 1.91. All films were previously characterized by Rutherford back-scattering and infrared spectroscopy to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity to determine the electron density profile across the depth, and we showed that the top layer is densified. Moreover, grazing incidence small-angle X-ray scattering was used to study inhomogeneities (clustering) in the films, and it is shown that plate-like inhomogeneities exist in the top and sphere-like particles at the bottom part of the film. Their shape and size depend on the stoichiometry of the films.     

Chemical analysis of acidic silicon etch solutions: I. Titrimetric determination of HNO3, HF, and H2SiF6

The chemical etching of silicon using HF-HNO₃ mixtures is a widely used process in the processing of silicon wafers for microelectronic or photovoltaic applications. The control of the etch bath composition is the necessary condition for an effective bath utilization, for the replenishment of the consumed acids, and to maintain a certain etch rate. The present paper describes two methods for the total analysis of the individual etch bath constituents HF, HNO₃, and H₂SiF₆. Both methods start with an aqueous acid-base titration determining the total acid concentration and the concentration of H₂SiF₆. The first method is an acid-base titration using a 0.1 mol L⁻¹ methanolic solution of cyclohexylamine (CHA) as non-aqueous titrant to determine the content of nitric acid. Then, the amount of hydrofluoric acid is calculated from the difference between the total acid and nitric acid content. The second method is based on the determination of the total fluoride concentration using a fluoride ion-selective electrode (F-ISE). The content of hydrofluoric acid is obtained from the difference between the total fluoride content and the amount of fluoride bound as H₂SiF₆. The amount of nitric acid results finally calculated as difference to the total acid content.     

极谱杂多酸吸附波测定合金中硅

在pH2—4的盐酸介质中,硅(Ⅳ)、锑(Ⅲ)与铝(Ⅵ)形成三元杂多酸,此三元杂多酸在0.4mol/L的HCl中能迅速在滴汞电极上还原而产生灵敏的极谱电流。其峰电位为-0.30V(vs.SCE)。测定下限是8×10~(-8)mol/L。