Influences of high-temperature annealing on atomic layer deposited Al2 O3/4H-SiC

High-temperature annealing of the atomic layer deposition (ALD) of Al2O3 films on 4H-SiC in O 2 atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al2O3 films annealed at 800℃ and 900℃ is pretty good, while the surface of the sample annealed at 1000℃ becomes bumpy. Grazing incidence X-ray diffraction (GIXRD) measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900℃. Furthermore, C-V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900℃ and 1000℃. It is indicated that high-temperature annealing in O2 atmosphere can improve the interface of Al2O3 /SiC and annealing at 900℃ would be an optimum condition for surface morphology, dielectric quality, and interface states.     

Ti3SiC2/TiC复合材料的制备及力学性能研究

弓网系统中,各种类型的受电弓滑板承担着传输电能的重要功能,其严酷的工作条件对受电弓滑板材料的性能提出了非常苛刻的要求。目前最主要的受电弓滑板有：粉末冶金滑板,纯碳滑板和浸金属碳滑板。其中碳滑板材料性能较好但价格昂贵,粉末冶金滑板材料价格便宜,但性能明显逊于前者。Ti3SiC2/TiC是一种兼具陶瓷与金属性质的新型材料,与碳滑板材料相比,其电阻率低,且具有良好的抗氧化性和自润滑减摩性,因此Ti3SiC2/TiC将可能成为一种工艺简单、成本更低、而性能则更高的新型受电弓滑板材料。本研究以Si、Ti和C为原料,利用熔渗反应烧结技术制备出Ti3SiC2/TiC复合材料,研究结果表明,制备样品的弯曲强度与硬度分别达到 423MPa~564MPa 和169~249HB。同时,本文对Ti3SiC2/TiC复合材料的断裂机理进行了研究。     

First-principles study on the electronic transport properties of M/SiC Schottky junctions (M=Ag,Au and Pd)

In this work, we investigate the electronic transport properties of M/SiC Schottky junctions (M=Ag, Au and Pd). The results show that the band structures of hydrogenated zigzag SiC nanoribbons (ZSiCNRs) and hydrogenated armchair SiC nanoribbons (ASiCNRs) are almost unaffected by their width changes. When the hydrogenated 7-ASiCNR is directly connected to the Ag, Au and Pd electrode, the transmission spectra of three metal-semiconductor junctions show that the Fermi level of metal is pinned to a fixed position in the semiconductor band gap of hydrogenated 7-ASiCNR. The nearly same rectifying current-voltage characteristics are found in three metal-semiconductor junctions. The average rectification ratios of three M/SiC Schottky junctions are all in the neighborhood of 10⁶. In other word, the M/SiC Schottky junction has remarkable application prospect as the candidate for Schottky Diode.     

喷射沉积 6061/SiC_p 复合材料的组织与拉伸性能

采用多层喷射共沉积法制备了６０６１铝合金／１０％ＳｉＣ颗粒增强复合材料,对其显微组织和拉伸性能进行了研究．结果表明,沉积坯组织为细小、均匀的等轴晶,增强相颗粒分布均匀,基体与增强相颗粒间没有发生界面反应．增强相颗粒加速了沉淀相析出并明显缩短峰时效时间,沉积坯热挤压后经５ｈ时效即可达到峰时效状态,此时力学性能为：σｂ４３９ＭＰａ,σ０．２４０９ＭＰａ,δ１０．４％,Ｅ１２０ＧＰａ．     

SiC 粒子增强铝基复合材料的断裂行为

通过拉伸和两种缺口断裂韧性试验（４ＰＢ和３ＰＢ）及断口和卸载试样金相观察分析,对ＳｉＣ粒子增强铝基复合材料的断裂行为进行了研究．结果表明：ＳｉＣ粒子与基体界面发生脱粘开裂形成微裂纹并扩展进入基体是其主要断裂过程．在ＳｉＣ粒子加入量相同,并进行Ｔ６处理的条件下,大尺寸ＳｉＣ粒子的复合材料具有较高的断裂强度和断裂韧性．     

碳化硅粒子增强铝基复合材料的研制

论述了ＳｉＣ粒子增强铝基复合材料的制备工艺,探讨了不同ＳｉＣ粒子加入量对材料物理性能、力学性能、磨损性能等的影响．结果表明,ＳｉＣ粒子的加入降低了材料的密度和热膨胀系数,但大大提高了材料的耐磨性能;复合材料与基体合金相比,抗拉强度有所下降．     

A modified polymethylsilane as the precursor for ceramic matrix composites

A novel SiC precursor, A-PMS, was synthesized through a reaction of polymethylsilane (PMS) with SbCl₃, where the Si-H in PMS reacts with Sb-Cl to form Si-Sb bond with HCl evaporated. A-PMS was used as a precursor to prepare C_f/SiC ceramic matrix composites (CMCs) via polymer infiltration and pyrolysis (PIP) process. It is evident that SbCl₃ plays a very important role in promoting chain crosslinking, transforming of the Si-Si into Si-C bonds and stabilizing PMS from very high oxidation trend of the active Si-H bonds. A-PMS keeps liquid at room temperature that is suitable for the infiltration in the absence of any solvent. A-PMS can be cured into a fully crosslinked structure at 320 °C that leads to a very high ceramic yield up to 91% and an Si/C ratio near 1.12 after pyrolysis. The resulted CMCs samples reached a density of 1.76 g cm⁻³ and a flexural strength of 381 MPa after only four infiltration-pyrolysis cycles.     

纳米SiC基光催化剂研究进展

Industrialization undoubtedly boosts economic development and improves the standard of living; however, it also leads to some serious problems, including the energy crisis, environmental pollution, and global warming. These problems are associated with or caused by the high carbon dioxide (CO₂) and sulfur dioxide (SO₂) emissions from the burning of fossil fuels such as coal, oil, and gas. Photocatalysis is considered one of the most promising technologies for eliminating these problems because of the possibility of converting CO₂ into hydrocarbon fuels and other valuable chemicals using solar energy, hydrogen (H₂) production from water (H₂O) electrolysis, and degradation of pollutants. Among the various photocatalysts, silicon carbide (SiC) has great potential in the fields of photocatalysis, photoelectrocatalysis, and electrocatalysis because of its good electrical properties and photoelectrochemistry. This review is divided into six sections: introduction, fundamentals of nanostructured SiC, synthesis methods for obtaining nanostructured SiC photocatalysts, strategies for improving the activity of nanostructured SiC photocatalysts, applications of nanostructured SiC photocatalysts, and conclusions and prospects. The fundamentals of nanostructured SiC include its physicochemical characteristics. It possesses a range of unique physical properties, such as extreme hardness, high mechanical stability at high temperatures, a low thermal expansion coefficient, wide bandgap, and superior thermal conductivity. It also possesses exceptional chemical characteristics, such as high oxidation and corrosion resistance. The synthesis methods for obtaining nanostructured SiC have been systematically summarized as follows: Template growth, sol-gel, organic precursor pyrolysis, solvothermal synthesis, arc discharge, carbon thermal reduction, and electrospinning. These synthesis methods require high temperatures, and the reaction mechanism involves SiC formation via the reaction between carbon and silicon oxide. In the section of the review involving the strategies for improving the activity of nanostructured SiC photocatalysts, seven strategies are discussed, viz., element doping, construction of Z-scheme (or S-scheme) systems, supported co-catalysts, visible photosensitization, construction of semiconductor heterojunctions, supported carbon materials, and construction of nanostructures. All of these strategies, except element doping and visible photosensitization, concentrate on enhancing the separation of holes and electrons, while suppressing their recombination, thus improving the photocatalytic performance of the nanostructured SiC photocatalysts. Regarding the element doping and visible photosensitization strategies, element doping can narrow the bandgap of SiC, which generates more holes and electrons to improve photocatalytic activity. On the other hand, the principle of visible photosensitization is that photo-induced electrons move from photosensitizers to the conduction band of SiC to participate in the reaction, thus enhancing the photocatalytic performance. In the section on the applications of nanostructured SiC, photocatalytic H₂ production, pollutant degradation, CO₂ reduction, photoelectrocatalytic, and electrocatalytic applications will be discussed. The mechanism of a photocatalytic reaction requires the SiC photocatalyst to produce photo-induced electrons and holes during irradiation, which participate in the photocatalytic reaction. For example, photo-induced electrons can transform protons into H₂, as well as CO₂ into methane, methanol, or formic acid. Furthermore, photo-induced holes can convert organic waste into H₂O and CO₂. For photoelectrocatalytic and electrocatalytic applications, SiC is used as a catalyst under high temperatures and highly acidic or basic environments because of its remarkable physicochemical characteristics, including low thermal expansion, superior thermal conductivity, and high oxidation and corrosion resistance. The last section of the review will reveal the major obstacles impeding the industrial application of nanostructured SiC photocatalysts, such as insufficient visible absorption, slow reaction kinetics, and hard fabrication, as well as provide some ideas on how to overcome these obstacles.      

Biomorphous SiC ceramics prepared from cork oak as precursor

Porous ceramic materials of SiC were synthesized from carbon matrices obtained via pyrolysis of natural cork as precursor. We propose a method for the fabrication of complex-shaped porous ceramic hardware consisting of separate parts prepared from natural cork. It is demonstrated that the thickness of the carbon-matrix walls can be increased through their impregnation with Bakelite phenolic glue solution followed by pyrolysis. This decreases the material’s porosity and can be used as a way to modify its mechanical and thermal characteristics. Both the carbon matrices (resulted from the pyrolysis step) and the resultant SiC ceramics are shown to be pseudomorphous to the structure of initial cork. Depending on the synthesis temperature, 3C-SiC, 6H-SiC, or a mixture of these polytypes, could be obtained. By varying the mass ratio of initial carbon and silicon components, stoichiometric SiC or SiC:С:Si, SiC:С, and SiC:Si ceramics could be produced. The structure, as well as chemical and phase composition of the prepared materials were studied by means of Raman spectroscopy and scanning electron microscopy.