Fabrication and superconducting properties of nano-SiC doped MgB2 tapes

Nano-SiC doped MgB2 tapes were prepared by the in situ powder-in-tube method. Heat treatment was performed at 650℃ for 1 h. XRD data indicate that SiC particles had reacted with the MgB2 during sintering process. MgB2 core seemed to be denser after SiC doping, and the critical temperature was slightly depressed. The critical current density Jc of the SiC doped tapes was significantly enhanced in magnetic fields up to 14 T compared to the undoped ones. For the 5% SiC doped samples, Jc was in- creased by a factor of 32 at 4.2 K, 10 T. The enhancement of Jc-B properties in SiC doped MgB2 tapes is considered to be due to the enhancement of grain linkages and the introduction of effective flux pining centers. The substitution of B by C in MgB2 grains is thought to be the main reason for the improve- ment of the flux pinning ability in SiC doped MgB2 tapes.     

多节状SiC晶须的合成及在矿冶工程材料中的应用

运用TEM、XRD等分析检测技术对SiCw的形貌结构、长度与直径分布及其应用于复合材料中的特性进行了检测。研究表明：SiCw产品以直晶为主，表面呈多节状，以-SiC为主要晶型，直径为0.2～1.5m,长度为30～200m。此外，作者对SiCw在矿冶工程材料中的应用进行了展望。     

提高Si_3N_4结合SiC棚板坯体成型密度的研究

为了获得性能优良的Ｓｉ３Ｎ４－ＳｉＣ棚板，就棚板制造过程中的配料及成型工艺等问题进行了实验研究，探讨了提高Ｓｉ３Ｎ４－ＳｉＣ棚板坯体密度的最佳途径。实验表明：振动成型时，振动时间和振动压力要匹配适当，才能得到最佳的坯体密度。工艺调整适当后，Ｓｉ３Ｎ４－ＳｉＣ棚板实际使用寿命可达５００次以上。     

Preparation and characterizations of amorphous nanostructured SiC thin films by low energy pulsed laser deposition

Amorphous silicon carbide (SiC) thin films were deposited on silicon substrates by pulsed laser ablation at room temperature. Thicknesses and surface morphology of the thin films were characterized using optical profilers, atomic force and field emission scanning electron microscopy. Nanohardnes, modulus and scratch resistance properties were determined using XP nanoindenter. The results show that crack free, smooth and nanostructured thin films can be deposited using low laser energy densities.     

Delaminated zeolite‐catalysed synthesis of high‐molecular weight polycarbosilane as a low shrinkage SiC precursor

A polycarbosilane (PCS) with a higher number–average molecular weight (2710 vs. 1570), and hence with a higher ceramic yield (74 vs. 68%), compared to a commercial Nipusi type S PCS has been synthesized via the catalytic decomposition of polydimethylsilane at 400 °C using H‐ITQ‐2, a delaminated zeolite with a very high external surface area, as a solid acid. The silicon carbide film fabricated using this PCS was found to show a much lower level (16 vs. 39%) of shrinkage than the commercial PCS‐derived film, together with better mechanical properties, suggesting the potential of its preceramic polymer to produce robust ceramic coatings. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 725–732, 2008     

纳米SiC蓝光发射的研究

在４．６８ｅＶ的激光激发下，室温ＣＶＤ合成的纳米ＳｉＣ粉体，可发射４７５ｎｍ的蓝光，经６００～１１００℃在Ｎ２气氛下进行快速退火（ＲＴＡ）处理，其荧光强度随退火温度升高而增强，当Ｔ≥９００℃时，荧光强度下降，但发光峰位与退火温度无关．通过ＸＲＤ、ＩＲ、ＴＥＭ、ＸＰＳ等研究，认为纳米ＳｉＣ中与氧有关的缺陷可能是引起４７５ｎｍ蓝光发射的主要原因     

硅基SiC薄膜的制备及性能研究

文章采用电子束物理气相沉积法在单晶Si(100)基片上制备了单层SiC薄膜和Al2O3/SiC双层膜,然后在不同温度下经氩气保护退火。通过X射线衍射仪(XRD)、原子力显微镜(AFM)对所制备的薄膜进行了结构和表面形貌分析。研究表明:退火后SiC薄膜由非晶态转为晶态,随退火温度的升高,薄膜结晶更充分,薄膜表面平均粗糙度变小;双层膜与单层膜相比,其SiC衍射峰有所增强,薄膜表面更加平滑。     

Eight MeV per charge state from 300 ps laser ion acceleration by using micrometric foils

Proton acceleration using high-intensity laser pulses, at 10¹⁶ W/cm² was studied irradiating different types of thin metal and plastic targets having 1-micron thickness. The maximization of the proton energy process was investigated optimizing the laser parameters, the irradiation conditions and the target properties. Employing 600–700 J laser pulse energy, a focalization inducing self-focusing effects and using targets with optimized thickness, it was possible to accelerate protons up to energies of above 8 MeV. The time-of-flight diagnostics has allowed to monitor the plasma properties and to control the ion acceleration process.     

面向单晶SiC原子级表面制造的等离子体辅助抛光技术

目前Si基半导体由于其自身材料特性的限制,已经越来越难以满足高速发展的现代电力电子技术对半导体器件的性能要求.SiC作为新一代半导体材料具有显著的性能优势,但由于其属于典型的难加工材料,实现SiC晶圆的高质量与高效率加工成为了推动其产业化应用进程的关键.本综述在回顾近年来SiC超精密加工技术研究进展的基础上,重点介绍了一种基于等离子体氧化改性的SiC高效超精密抛光技术,分析了该技术的材料去除机理、典型装置、改性过程及抛光效果.分析结果表明,该技术具有较高的去除效率,能够获得原子级平坦表面,并且不会产生亚表面损伤.同时针对表面改性辅助抛光技术加工SiC表面过程中出现的台阶现象,探讨了该台阶结构的产生机理及调控策略.最后对等离子体辅助抛光技术的发展与挑战进行了展望.     

Selective area laser deposition of FCC beta silicon carbide

Silicon Carbide (SiC) has been deposited onto an alumina substrate by the thermal decomposition of the gaseous precursor tetramethylsilane (TMS). A 500 W ytterbium fibre laser was used to heat the surface of an alumina substrate locally, resulting in deposition of SiC at the sample surface. The SiC deposit was analysed using energy dispersive X‐ray spectroscopy and X‐ray diffraction (XRD). The deposit was confirmed to be silicon carbide and found to be face centre cubic (FCC) crystal structure. Raman spectroscopy was used to measure the stoichiometry of the deposit which initially was found to be carbon rich. Further analysis by Raman spectroscopy suggests the deposit may be more stoichiometric following a two hour thermal treatment of the sample at 600 degrees celcius in an atmosphere of air.