Enhancement of corrosion resistance of electrocodeposited Ni–SiC composites by magnetic field

The corrosion behavior and surface morphology of Ni–SiC composite coatings produced by electrodeposition with the aid of magnetic field were studied. The results of the electrochemical analysis including polarization resistance and potentiodynamic polarization curves showed that a magnetic field of 0.1 T could significantly improve the corrosion resistance of the composite. The electrochemical impedance spectra revealed that a passive layer was formed on the surface of the Ni–SiC coating with the magnetic field. The microstructures of electrodeposited Ni–SiC composite coatings were also examined. More SiC particles were found to be incorporated into the coating with the presence of magnetic field, which was considered to be one of the reasons for the enhancement of corrosion resistance as SiC particles were reported to be corrosion inhibitors. Contribution to special issue “Magnetic field effects in Electrochemistry”     

6H-SiC/3C-SiC/6H-SiC量子阱结构制备及其发光特性

利用固源分子束外延(SSMBE)生长技术, 在1350K的衬底温度下, 通过改变Si束流强度, 在6H-SiC(0001)面上外延生长6H-SiC/3C-SiC/6H-SiC量子阱结构薄膜, 并用反射高能电子衍射(RHEED)与光致发光(PL)谱对生长的薄膜的晶型和发光特性进行表征. RHEED 结果显示生长的薄膜为6H-SiC/3C-SiC/6H-SiC量子阱结构薄膜. 室温下He-Gd激光激发的光致发光(PL)谱显示, 薄膜在480-600 nm范围内存在衬底未观察到的较强发光. 拟合得到的发光峰与依据量子阱结构模型计算出的发光位置较为一致. 由此表明, 该强发光带可能是6H-SiC/3C-SiC/6H-SiC量子阱结构的发光.     

碳纤维表面原位SiC纳米纤维的合成与生长

基于化学气相反应法,以高纯Si和SiO₂为反应源材料,在碳纤维表面原位生长β-SiC纳米纤维。采用XRD、SEM和TEM 等分析测试手段对SiC纳米纤维进行了表征分析,研究了不同反应温度和时间对生成β-SiC纳米纤维微观形貌和结构的影响,并探讨了β-SiC纳米纤维的生长机制。研究结果表明：采取化学气相反应法能够制备高质量、高纯度的β-SiC纳米纤维,纳米纤维的直径约为100~300 nm。随着反应温度的提高和时间的延长,纳米纤维的产额增加,且微观组织形貌发生了变化。结合制备过程和纳米纤维微观结构的观察分析,表明气-固(VS)机制是SiC纳米纤维生长的主要机理。     

Molecularly engineered graphene surfaces for sensing applications: A review

Graphene is scientifically and commercially important because of its unique molecular structure which is monoatomic in thickness, rigorously two-dimensional and highly conjugated. Consequently, graphene exhibits exceptional electrical, optical, thermal and mechanical properties. Herein, we critically discuss the surface modification of graphene, the specific advantages that graphene-based materials can provide over other materials in sensor research and their related chemical and electrochemical properties. Furthermore, we describe the latest developments in the use of these materials for sensing technology, including chemical sensors and biosensors and their applications in security, environmental safety and diseases detection and diagnosis.     

SiC单晶片的取向研磨

优质晶体生长常常需要籽晶或衬底偏离常规结晶取向.为便于按任意偏向角度研磨晶片,本实验室设计并应用了晶片取向研磨夹具及相应的研磨工艺.本文介绍了该夹具和工艺的工作原理、技术要点以及对技术指标的鉴定情况.测试结果表明,研磨取向误差范围可控制在5;之内,研磨片厚度偏差小于5 μm、粗糙度Ra=0.12 μm.     

双环缝喷射共沉积SiC颗粒的捕获与分布研究

采用坩埚移动式喷射共沉积装置及其双环缝复合雾化器制备了SiC颗粒增强铝基复合材料坯件,研究了过程中增强颗粒的捕获机制及特点.实验结果表明,双环缝复合雾化器所引入的SiC颗粒捕获率较高,分布均匀;增强颗粒主要在雾化初时阶段被雾化液滴所捕获,而沉积坯表面因基本呈固相且温度较低,对SiC颗粒的直接捕获效果不明显;沉积坯快冷凝固界面前沿捕获对SiC颗粒的分布影响不大,SiC颗粒在沉积坯中的最终分布主要取决于由雾化液滴对增强颗粒的捕获,特别决定于SiC颗粒在单个雾化颗粒内部及空间雾化颗粒群中的分布.     

电站锅炉中粉煤灰与SiC耐火材料结渣性研究

本文主要研究含Cr2O3的硅酸锆结合SiC耐火材料的抗粉煤灰侵蚀规律,将两种不同的粉煤灰平铺在SiC耐火材料上,作用温度为1250～1450 ℃,保温时间为40小时,然后用视频光学显微镜和XRD衍射图谱来确定其显微结构和物相组成,初步实验结果表明SiC质耐火材料具有较好的抗煤灰侵蚀性能.     

Al_2O_3/SiC纳米陶瓷复合材料的制备及力学性能

采用一次粒径分别为10nm和15nm的αAl2O3和SiC粉体为原料,制备了Al2O3/SiC纳米陶瓷复合材料·纳米SiC颗粒明显抑制Al2O3基体晶粒的长大,SiC体积分数超过4%时,材料的断裂方式由沿晶断裂变为穿晶断裂·随SiC含量的增加,Al2O3/SiC纳米复合材料的硬度增大·材料的弯曲强度和断裂韧性在SiC体积分数为5%时达到最大值·最大三点弯曲强度和断裂韧性分别为641MPa和47MPam1/2,明显高于热压单相Al2O3陶瓷(344MPa和31MPam1/2)·复合材料的强化主要来源于内晶颗粒残余应力强化和晶粒细化...     

Theoretical calculations on the atomic and electronic structure of β-SiC(110) surface

We present a theoretical calculation of the atomic and electronic structure of β-SiC and its non-polar (110) surface using the full potential linear augmented plane wave (FPLAPW) approach. The calculated lattice constant and bulk modulus of β-SiC crystal are in excellent agreement with experimental data. The atomic and electronic structure of β-SiC(110) surface has been calculated by employing the slab and supercell model. It is found that the surface is characterized by a top-layer bond-length-contracting rotation relaxation in which the Si-surface atom moves closer towards the substrate while the C-surface atom moves outward. This relaxation is analogous to that of Ⅲ-Ⅴ semiconductor surface. The driving mechanism for this atomic rearrangement is that the Si atom tends to a planar sp²-like bonding situation with its three N neighbors and the N atom tends to a p³-like bonding with its three Si neighbors. Furthermore, surface relaxation induces the change from metallic to semiconducting characterization.     

SiC冶炼炉温度场的有限元分析及其ANSYS模拟研究

采用有限元分析方法对Acheson炉内温度场进行研究 ,进而采用ANSYS数值模拟软件对冶炼炉内温度分布进行模拟 ,得到了冶炼炉内温度分布的模拟图 ,分析了炉内的温度分布规律及其对SiC的生成和产率的影响 ,并提出了扩大SiC生成温度区域的措施