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231.
Damping in metal matrix composites is mainly caused by inelastic matrix deformation induced by the great difference in the mechanical properties of the single constituents of the materials. In this study, the finite-element method in combination with a highly accurate material model is employed to examine the effects of both the fiber volume fraction and the external loading amplitude on the energy dissipation process in an Al/SiC composite under a cyclic mechanical load. 相似文献
232.
低能电子衍射 (LEED)对 6H SiC(0 0 0 1) (3× 3)R30°表面的研究结果表明 ,该表面有 1/3单层的Si原子吸附在T4 空位上与第一个SiC复合层中的三个Si原子键接 ,它们之间的垂直距离为 0 171nm .通过对该表面 10个非等价垂直入射衍射束的自动张量低能电子衍射 (ATLEED)计算 ,得到“最佳结构”由于表面SiC复合层堆积顺序不同而产生的三种表面终止状态 (surfacetermination)的混合比例为S1∶S2∶S3 =15∶15∶70 ,理论计算与实验I V曲线比较得到可靠性因子RVHT=0 .16 5 ,RP=0 .142 ,表明表面生长符合能量最小化的台阶生长机制 相似文献
233.
234.
纳米SiC水悬浮液稳定性的研究 总被引:18,自引:0,他引:18
本文选用SiC纳米粉料,分别以聚乙二醇(PEG)和两种分子量不同的聚甲基丙烯酸铵(PMAA-NH4)作分散剂来制备稳定分散的2vo1%纳米SiC水悬浮液。通过沉降实验和粘度测量,研究SiC纳米颗粒水悬浮液的分散特征及最佳分散条件。 相似文献
235.
Sialon/SiC复相材料的组织与性能 总被引:1,自引:1,他引:0
研究了利用粘土、SiC为主要原料,直接合成的Sialon/SiC复相耐火材料的相组成和显微组织,并研究了材料中Sialon含量对复相材料的密度、抗折强度、耐压强度和热震稳定性的影响·结果表明,复相材料的抗折强度和耐压强度均随Sialon相含量的增加而增加,最大抗折强度为876MPa,最大耐压强度为193MPa;材料的体积密度随材料中Al2O3残余相含量的增加而增加,材料的最大体积密度为265g/cm3;材料的热震稳定性随Sialon相含量的增加而下降;材料的显微组织为Sialon和Al2O3形成的连续基质相包裹着SiC颗粒的显微复合组织· 相似文献
236.
Structures and Properties of Cast Irons Reinforced by Trace Addition of Modified SiC Nanopowders
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"To improve the performance of traditional cast iron, trance amount of surface modified nanometer SiC powders were added into the melted iron. The microstructures, the mechanical properties, as well as the wear resistance were investigated. The trace addition of SiC nano-powders were active due to the presence of structural defects arising from the treatment, they were eoient in affecting not only the generation and growth of crystals but also change the morphology of graphite. On the other hand, the addition of SiC nanopowders as heterogeneous seedings in the crystallization of liquid metals lead to the changing of supercooling temperature, so the ratio of ferrite and pearlite was changed. The mechanical characteristics and wear resistance were enhanced as a result of the improved graphite shape and changed matrix composition caused by the trace addition of SiC nanopowders (in amounts of about 0.01% mass). The strengthening mechanism and the free gap between powders were also discussed. It is suggested that the tensile strength, toughness, as well as the wear resistance can be improved simultaneously, which indicates the novel strengthening technology by trace addition of nanopowders is promising to extend to large-scale industrial production." 相似文献
237.
The Si on SiC heterojunction is still poorly understood,
although it has a number of potential applications in electronic and
optoelectronic devices, for example, light-activated SiC power
switches where Si may play the role of an light absorbing layer. This
paper reports on Si films heteroepitaxially grown on the Si face of
(0001) n-type 6H-SiC substrates and the use of B2H_6 as a
dopant for p-Si grown at temperatures in a range of
700--950~\du. X-ray diffraction (XRD) analysis and transmission
electron microscopy (TEM) tests have demonstrated that the samples
prepared at the temperatures ranged from 850~℃ to 900~℃ are
characterized as monocrystalline silicon. The rocking XRD curves
show a well symmetry with FWHM of 0.4339° Omega. Twin
crystals and stacking faults observed in the epitaxial layers might
be responsible for widening of the rocking curves. Dependence of the
crystal structure and surface topography on growth temperature is
discussed based on the experimental results. The energy band structure
and rectifying characteristics of the Si/SiC heterojunctions are
also preliminarily tested. 相似文献
238.
Jae Kyeong Jeong Hoon Joo Na Jaeho Choi Cheol Seong Hwang Hyeong Joon Kim Wook Bahng 《Journal of Crystal Growth》2000,210(4):629-636
Homoepitaxial silicon carbide (SiC) films were grown on 3.5° off-oriented (0 0 0 1) 6H–SiC by metal-organic chemical vapor deposition (MOCVD) using bis-trimethylsilylmethane (BTMSM, C7H20Si2). A pronounced effect of the growth conditions such as source flow rate and growth temperature on the polytype formation and structural imperfection of the epilayer was observed. The growth behavior was explained by a step controlled epitaxy model. It was demonstrated by high-resolution X-ray diffractometry and transmission electron microscopy that high-quality 6H–SiC thin films were successfully grown at the optimized growth condition of substrate temperature 1440°C with the carrier gas flow rate of 10 sccm. 相似文献
239.
R. G. Elliman 《辐射效应与固体损伤》2013,168(3):77-82
A new impurity redistribution mechanism is reported for low temperature annealing (525°C) of (100) Si samples implanted with high indium doses. The redistribution is a strong function of implant dose and is believed to be stress related. 相似文献
240.
The interface between nanoparticles and the polymer matrix, which dominates the electrical properties of nanocomposites, can effectively improve the DC breakdown and suppress space charge accumulation in nanocomposites. To research the interface characteristics, XLPE/SiC nanocomposites with concentrations of 1 wt%, 3 wt% and 5 wt% were prepared. The DC breakdown, dielectric properties and space charge behavior were examined using pulsed electro-acoustic (PEA) equipment and a dielectric analyzer. The test results show that the nanocomposites with concentrations of 1 wt% and 3 wt% have higher DC breakdown field strength than neat XLPE. In contrast, there is a lower DC breakdown strength at a concentration of 5 wt%, possibly due to the agglomeration of nanoparticles. Nanoparticle doping increases the real and imaginary permittivities over those of neat XLPE. Furthermore, with increasing concentration, a larger increase in the permittivity amplitude was observed. Based on the space charge behavior, all nanocomposites could suppress space charge accumulation, but the nanocomposite with a concentration of 1 wt% exhibited the best effect. Meanwhile, heterocharge accumulation near electrodes was observed in neat XLPE and the nanocomposite with a concentration of 5 wt%. In contrast, homocharge accumulation near electrodes was observed in the nanocomposite with a concentration of 3 wt%. This phenomenon may be due to different amounts of shallow traps in nanocomposites with different concentrations, which might lead to differing electron or hole mobility. 相似文献