C~ 注入Si中形成SiC的初步研究

将C 离子注入硅衬底,衬底温度约为400℃,C 离子引出电压为45keV注入剂量为5×1017cm-2.经高温退火形成碳化硅沉淀,利用X射线光电子能谱(XPS),俄歇电子能谱(AES)及傅立叶变换红外吸收光谱(FTIR),对所形成的碳化硅埋层作了初步的分析.     

聚锆碳硅烷陶瓷先驱体的制备与表征

为了提高SiC陶瓷纤维的综合性能,利用聚二甲基硅烷(PDMS)热解制得的液相产物聚硅碳硅烷(PSCS)与乙酰丙酮锆(Zr(AcAc)4)反应,制备了含锆SiC陶瓷纤维的先驱体聚锆碳硅烷(PZCS).选用液相PSCS作为反应原料,可使锆元素在先驱体中分布更加均匀,并能防止Zr(AcAc)4在反应过程中升华.实验合成的PZCS化学式为SiC1.94HxO0.066Zr0.0104,数均分子量Mn=200~400,再成型性良好.反应机理研究表明,反应过程中存在PSCS裂解重排反应,Si—H键在反应中显示出很高的活性,PZCS分子量的增加是PSCS形成的Si—H键与Zr(AcAc)4的配位基发生交联反应的结果.利用PZCS制备的Si—Zr—C—O陶瓷纤维平均强度2.6GPa,平均直径11μm,性能优异.     

A TEM study on the microstructure of spark plasma sintered ZrB_2-based composite with nano-sized SiC dopant

Sintering behavior of ZrB₂ ceramic with nano-sized SiC dopant was studied. ZrB₂-25 vol% nano-sized SiC was selected as the starting mixture to fabricate the composite. The manufacturing process was accomplished at 1800℃ for 5 min under 25 MPa via spark plasma sintering(SPS). The as-sintered sample reached a relative density of 99%. Besides the initial phases, namely ZrB₂ and SiC, the high-resolution X-ray diffraction(HRXRD) was used to study the formation of an i...     

Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC(0 0 0 1)

The Ge growth on SiC(0 0 0 1) follows a Stranski–Krastanov mode for Si-rich (3×3) and reconstructed surfaces. For Ge deposit in particular temperature conditions, a new (4×4) superstructure takes place and the reflection high energy electron diffraction (RHEED) specular spot intensity presents one oscillation proving a wetting layer formation. An island nucleation is then ascertained by the oscillation vanishing and by the appearance of a k-modulated RHEED pattern. On the other hand, on a C-rich surface, a direct Ge island nucleation is observed from the first growth stage. Indeed, for 1 ML Ge, the RHEED diagram consists in spots and rings, and the atomic force microscopy analysis indicates a high density (8×10¹⁰ cm⁻²) of small islands (30 nm, h3 nm). The RHEED spot analysis shows a preferential epitaxial relationship with the substrate Ge(1 1 1)//SiC(0 0 0 1). The Ge–C bonding being energetically unfavourable, Ge tends to form islands immediately rather than wetting the graphite-terminated surface. The Ge growth mode on C-rich surface is thus of Volmer–Weber type.     

Growth and characterization of β-SiC films obtained by fs laser ablation

We achieved the growth of cubic silicon carbide (SiC) films on (1 0 0)Si substrates by pulsed laser deposition (PLD) at moderate temperatures such as 750 °C, from a SiC target in vacuum. The as-deposited films are morphologically and structurally characterized by scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM). The morphology of deposited films is dominated by columns nucleated from a thin nanostructured beta silicon carbide (β-SiC) interface layer. The combined effects of columnar growth, tilted facets of the emerging columns and the presence of particulates on the film surface, lead to a rather rough surface of the films.     

SiC/SiC复合材料第一壁热工设计

以日本原子力研究所那珂研究所聚变堆设计室进行的先进稳态托卡马克聚变堆2（A－SSTR2）概念设计为基础，对SiC/SiC复合材料包层／第一壁热工设计进行了分析计算。通过选取各种几何位形和材料敏感特性参数，用有限元法进行了大量的热工计算，以最高温度、最大热应力为基础建立了包层／第一壁设计窗口，选取了满足热工要求的最佳设计方案，对今后的工程设计具有指导作用和重要的参考价值。     

Si_3N_4结合的SiC质砖衬的蚀损行为

系统地研究了 Si_2N_4 结合的 SiC 质砖衬在高炉冶炼环境中的氧化特征及其碱蚀行为,初步探讨了高炉用 SiC 砖衬的蚀损机理。结果表明;氧化→碱蚀→剥落或熔蚀是高炉用 SiC 砖蚀损的基本过程。传中杂质将使砖衬产生“溶洞”现象,热应力将导致砖衬工作面形成龟裂。“熔洞”和龟裂直接破坏了砖衬工作面的完整性,结果将诱发和加速 SiC 砖衬的蚀损。     

加压排气渗流法制备高体积分数铝基复合材料

采用正交试验法，研究了ＳｉＣ粒子预热温度、金属液温度、外加渗流压力及ＳｉＣ粒子直径对加压排气渗流法制备复合材料的影响．试验结果表明，粒子预热温度是影响加压排气渗流法制备复合材料的显著因素．并通过对加压排气过程渗流中液态金属温度的测量，探讨了液态金属在该过程中停止流动的机理．     

SiCp/ZA22复合材料组织的研究

对含10％～15％（Vol），10～20μmSiC颗粒增强ZA22基复合材料铸态和挤压态的组织、SiC分布特征进行了比较分析，为SiCp／ZA22进一步的研究，应用提供了理论依据及实践指导。     

SiCw/6061 Al复合材料中界面相的研究

利用电子显微镜分析研究了ＳｉＣ２／６０６１Ａｌ复合材料的界面相。电子衍射分析表明，ＳｉＣｗ／６０６１Ａｌ面相 体心立方结构，点阵常数为１．２８ｎｍ用Ｘ－射线能谱仪测定了界面相的化学成分。