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11.
Experimental study on radiation effects in floating gate read-only-memories and static random access memories
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Radiation effects of the floating gate read-only-memory (FG ROM) and
the static random access memory (SRAM) have been evaluated using the
14~MeV neutron and 31.9MeV proton beams and Co-60 $\gamma $-rays. The
neutron fluence, when the first error occurs in the FG ROMs, is at
least 5 orders of magnitude higher than that in the SRAMs, and the
proton fluence, 4 orders of magnitude higher. The total dose
threshold for Co-60 $\gamma $-ray irradiation is about 10$^{4}$~rad
(Si) for both memories. The difference and similarity are attributed
to the structure of the memory cells and the mechanism of radiation
effects. It is concluded that the FG ROMs are more reliable as
semiconductor memories for storing data than the SRAMs, when they are
used in the satellites or space crafts exposed to high energy
particle radiation. 相似文献
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提出一种新型电流模式SRAM灵敏放大器结构。该灵敏放大器采用两级结构, 通过增加一级基于锁存器结构的高速放大电路, 能够快速感应位线的电流变化并放大为全摆幅信号, 不仅能加快求值速度, 而且电流传送器还起到隔离直流通路、减少电路直通功耗的作用。 基于1.0 V/65 nm工艺的HSPICE仿真结果显示, 与WTA灵敏放大器相比, 该灵敏放大器速度提高17%, 功耗减少86%。 相似文献
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The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array.TCAD simulation was performed.TIDinduced degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs. 相似文献
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Chih‐Jung CHen Hung‐Ju Yen Wen‐Chang Chen Guey‐Sheng Liou 《Journal of polymer science. Part A, Polymer chemistry》2011,49(17):3709-3718
The functional polyimide (OMe)2TPPA‐6FPI ( PI ) and the polyamide (OMe)2TPPA‐6FPA ( PA ) consisting of electron‐donating N,N′‐bis(4‐aminophenyl)‐N,N′‐di(4‐methoxylphenyl)1,4‐phenylenediamine [(OMe)2TPPA‐diamine] for memory application were prepared in this study. These polyimide and polyamide memory devices were fabricated with the sandwich configuration of indium tin oxide (ITO)/polymer/Al, and could be switched from the initial low‐conductivity (OFF) state to the high‐conductivity (ON) state with high ON/OFF current ratios of 107 and 109, respectively. PI exhibited dynamic random access memory (DRAM) performance, whereas PA showed static random access memory (SRAM) behavior. To get more insight into the memory behaviors of these two different types of polymer memory devices, molecular simulation on the basic unit was carried out. Furthermore, the differences of highest occupied molecular orbital (HOMO) energy level, lowest unoccupied molecular orbital (LUMO) charge density isosurfaces, dipole moment, and linkage conformation between PI and PA were found to affect the volatile memory behavior. Both polymer memory devices revealed excellent stability with long operation time of 104 s at continuous applied voltage of ‐2 V. The effect of polymer thickness on the volatile memory behavior of PA was also investigated in this study. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011 相似文献
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本文利用60Coγ源和兰州重离子加速器,开展不同累积剂量下,静态随机存储器(static random access memory,SRAM)单粒子效应敏感性研究,获取不同累积剂量下SRAM器件单粒子效应敏感性的变化趋势,分析其辐照损伤机理.研究表明,随着累积剂量的增加,SRAM器件漏电流增大,影响存储单元低电平保持电压、高电平下降时间等参数,导致"反印记效应".研究结果为空间辐射环境中宇航器件的可靠性分析提供技术支持. 相似文献
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随着半导体及电子工艺技术的迅速发展,器件向着小尺度、低电压、低电荷、高集成度迈进,大气中子对航空及地面的电子系统造成的单粒子效应越来越显著.本文采用PHITS2.24蒙特卡罗程序及其事件发生器功能,借助于核反应模型与截面数据,验算了描述器件发生单粒子翻转能力的MBGR参数,并采用大气高能中子能谱,对SRAM器件的单粒子翻转率进行了计算与分析.这为我们今后模拟大气中子产生的各类单粒子效应提供了基本方法,也为将来开展相应的辐照实验提供了理论基础. 相似文献
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一种I2C总线接口的串行时钟芯片 总被引:1,自引:0,他引:1
论述了一种采用I2C总线接口的串行实时时钟芯片的设计方法.该芯片是一个低功耗、完全BCD码的时钟/日历芯片,地址和数据通过I2C双向数据总线串行传输.时钟/日历提供秒、分、时、日、星期、月和年的时间信息;集成的249 byte的静态随机存储器(SRAM)可用于存储临时信息;内置了电源电压监控电路,可使芯片在掉电时自动转入电池供电模式,并对SRAM进行掉电保护;与微处理器连接时,只占用CPU的2条I/O口线(SDA口线和SCL口线),数据传输速率最高可达400 kHz. 相似文献
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文章采用萨方程对CMOS工艺的6管静态存储单元结构进行分析计算,探讨了在工艺特征尺寸确定的情况下,晶体管沟道宽度为何值时存储阵列的数据输出延迟最小的估算方法;利用Matlab求解得到一个非线性方程;该方法适用于不同的存储阵列和特征尺寸,可以快速地估算出晶体管沟道宽度,为设计存储器单元版图时提供了方便。 相似文献