Properties of solvent-free perylene iodine

The perylene iodine system was prepared by a vapour-phase reaction without the use of solvents. Compositions between peryleneI₂ and peryleneI₆ were synthesized and studied by gravimetric analysis, infrared spectroscopy, X-ray diffraction and temperature-dependent resistivity measurements. Infrared spectra in the region 400–4000 cm⁻¹ taken after different amounts of iodine were removed from the sample are distinct from perylene with new absorption lines at 1551 and 1302 cm⁻¹ and shifts of some perylene frequencies. Powder X-ray diffraction measurements indicate that the lattice is monoclinic with parameters a=11.65 Å, b=10.85 Å, c=10.1 Å, β=100.5°. The (1 0 0) reflection, which is forbidden in the space group of perylene, is observed from the compound. The material is electrically conductive and obeys Ohm's law at high temperatures. At low temperatures and high currents, nonlinear effects are observed. The conductivity of the material increases to 1.0 (Ω cm)⁻¹ at room temperature as the iodine content increases to a composition of peryleneI₆. The resistivity obeys an exponential temperature dependence.     

The effect of hydrogenation/dehydrogenation cycles on palladium physical properties

A series of hydrogenation/dehydrogenation cycles have been performed on palladium wire samples, stressed by a constant mechanical tension, in order to investigate the changes in electrical and mechanical properties. A large increase of palladium electrical resistivity has been reported due to the combined effects of the production of defects linked to hydrogen insertion into the host lattice and the stress applied to the sample. An increase of the palladium sample strain due to hydrogenation/dehydrogenation cycles in α→β→α phase transitions is observed compared to the sample subjected to mechanical tension only. The loss of initial metallurgical properties of the sample occurs already after the first hydrogen cycle, i.e. a displacement from the initial metallic behavior (increase of the resistivity and decrease of thermal coefficient of resistivity) to a worse one occurs already after the first hydrogen cycle. A linear correlation between palladium resistivity and strain, according to Matthiessen's rule, has been found.     

Structural and physical properties of ZnO:Al films grown on glass by direct current magnetron sputtering with the oblique target

ZnO:Al films were deposited on glass substrates at 300 K and 673 K by direct current magnetron sputtering with the oblique target. The Ar pressure was adjusted to 0.4 Pa and 1.2 Pa, respectively. All the films have a wurtzite structure and grow with a c-axis orientation in the film growth direction. The films grow mainly with columnar grains perpendicular to the substrate and some granular grains also exist in the films. The film deposited at 673 K and 0.4 Pa has the largest grains whereas that prepared at 300 K and 0.4 Pa consists of the smallest grains and is porous. The films exhibit an n-type semiconducting behavior at room temperature. The ZnO:Al film deposited at 673 K and 0.4 Pa has the lowest resistivity (3.40 × 10⁻³ Ω cm), the highest free electron concentration (4.63 × 10²⁰ cm⁻³) and a moderate Hall mobility (4.0 cm² V⁻¹ s⁻¹). The film deposited at 300 K and 0.4 Pa has the highest resistivity and the lowest free electron concentration and Hall mobility. A temperature dependence of the resistivity reveals that the carrier transport mechanism is Mott’s variable range hopping in the temperature region below 100 K and thermally activated band conduction above 215 K. The activation energy for the film deposited at 300 K and 0.4 Pa is 41 meV and that for the other films is about 35 meV. All the films have an average optical transmittance of over 85% in the visible wavelength range. The absorption edge of the film deposited at 300 K and 0.4 Pa shifts to the longer wavelength (redshift) relative to the films prepared under the other conditions.     

Roughness influence on the sheet resistance of the PEDOT:PSS printed on paper

The use of paper as a platform to manufacture organic electronic devices, electronic paper, has expanding potential for many applications because of several properties offered. In this work, we show a study of PEDOT:PSS printed by inkjet on bond paper, vegetal paper and sheets of PET. The relation between the surface density of the deposited material, morphology and resistivity was investigated for samples printed with a commercial Hewlett-Packard(HP)^® printer and Microsoft Word^® software. The amount of material deposited, i.e. surface density, was controlled using the print number in the same position and changing the gray scale used in the image formation. Changing the surface density of printed PEDOT:PSS, it is possible to produce a continuous film permeating the papers fibers. Sheet resistances obtained, when 7.0 mg cm⁻² of PEDOT:PSS were deposited on the surfaces, were: (a) 413.2 kΩ/Sq for bond paper, (b) 5.6 kΩ/Sq for vegetable paper and (c) 2.3 kΩ/Sq for PET. The exponential dependence of sheet resistance with the surface density of printed material allows us to evaluate the strong influence of substrate roughness on PEDOT:PSS conductivity and to predict, for each one, conditions to minimize it.     

Low temperature electronic transport in sputter deposited a-IGZO films

We report on the electrical properties of a-IGZO thin films prepared by reactive sputtering. Without oxygen injection, dc resistivity measured at room temperature is ρ_300K = 1.22 × 10⁻³ Ωm. The lowest resistivity ρ_300K = 4.86 × 10⁻⁵ Ωm is obtained at a certain oxygen supply into the deposition process. Hall effect measurements of these films reveal a metallic-like behavior from mobility and carrier concentration vs. temperature in the range 15–300 K whereas films deposited without oxygen or for the highest oxygen flows behave as semiconductors. These enhanced electrical properties are connected to the oxygen vacancies and the local coordination structure around the In³⁺ cations.     

Effects of metal doping on the physical properties of ZnTe thin films

Zinc telluride (ZnTe) thin films were sublimated on a glass substrate using closed space sublimation (CSS) technique. ZnTe thin films of same thickness were tailored with copper (Cu) & silver (Ag) doping, considered for comparative study. X-ray diffraction (XRD) patterns of as-deposited ZnTe thin film and doped ZnTe samples exhibited polycrystalline behavior. The preferred orientation of (111) having cubic phase was observed. XRD patterns indicated that the crystallite size had increased after silver and copper immersion in as-deposited ZnTe thin films. Scanning electron microscopy (SEM) was used to observe the change of as-deposited and doped sample's grains sizes. EDX confirmed the presence of Cu and Ag in the ZnTe thin films after doping respectively. The optical studies showed the decreasing trend in energy band gap after Cu and Ag-doping. Transmission also decreased after doping. Resistivity of as-deposited ZnTe thin film was about 10⁶ Ω cm. The resistivity was reduced to 68.97 Ω cm after Cu immersion, and 10⁴ Ω cm after Ag immersion. Raman spectra were used to check the crystallinity of as-deposited, Cu and Ag-doped ZnTe thin film samples.     

X-ray photoemission spectra measurements of CeNi2Sb2 and CeCu2Sb2

X-ray photoemission spectra, resistivity and susceptibility of CeNi₂Sb₂ and CeCu₂Sb₂ were measured and are discussed. The results indicate that these alloys are Kondo systems. For comparison of the valence band properties, the spectra of the isostructural alloys of RT₂X₂-type with R = La, Gd, T = Cu, Ni and X = Sn, Sb were investigated, too.     

Structural features of melts in the In-Bi system

A testing device for the resistivity of high-temperature melt was adopted to measure the resistivity of In-Bi system melts at different temperatures. The resistivity of In_xBi_100−x(x=0-100) melt is in linear relationship with temperature, which is within the temperature measuring range. The resistivity of melt lowers with the increase of the In content. Based on Nordheim law and combined with the experimental resistivity of In-Bi melts, we verified the existence of InBi atom clusters and estimated the mole fraction of the InBi atom clusters in the melt, and the estimated value shows fine consistency with the result in literature [1]. The study reveals that the structural feature of In-Bi melts can be briefly divided into two intervals: in the interval of 0-50 at% In, the structural feature of the melt is that InBi atom clusters distribute in matrices, which have similar properties of Bi; in the interval of 50 at%-100 at% In, the structural feature of the melt is that InBi atom clusters distribute in matrices, which have similar properties of In. The content of InBi atom clusters in In₅₀Bi₅₀ melts reaches a higher value when the temperature is cooled down to a point, which is 152 K above the melting point. At the same time, the melts have an obvious fluctuation of concentration, which leads to that the resistivity of the melts deviates from the linear relationship at high temperature.     

Influence of rare earth Ce on structural, electrical and magnetic properties of Sr based W-type hexagonal ferrites

A series of single phase W-type Sr_3−xCe_xFe₁₆O₂₇ (x=0, 0.02, 0.04, 0.06, 0.08, 0.10) hexagonal ferrites prepared by the Sol-Gel method was sintered at 1050 °C for 5 h. The X-ray diffraction analysis reveals that all the samples belong to the family of W-type hexagonal ferrites. The c/a ratio falls in the range of W-type hexagonal ferrites. The grain size was measured by SEM varies from 0.7684 to 0.4366 μm which shows that the Ce³⁺ substituted samples have smaller grain size than pure ferrite Sr₃Fe₁₆O₂₇ which results from the difference in ionic radii of Ce³⁺ (1.034 Å) and Sr²⁺ (1.12 Å). The room temperature resistivity of the present samples varies from 6.5×10⁸ to 272×10⁸ Ω-cm. The coercivity increases from 1370 to 1993 Oe which is consistent with the decrease in grain size. The coercivity values indicate that the present samples fall in the range of hard ferrites. The large value of H_c may be due to domain wall pinning at the grain boundaries.     

A New Method for Calculating Two-Phase Relative Permeability from Resistivity Data in Porous Media

Many resistivity data from laboratory measurements and well logging are available. Papers on the relationship between resistivity and relative permeability have been few. To this end, a new method was developed to infer two-phase relative permeability from the resistivity data in a consolidated porous medium. It was found that the wetting phase relative permeability is inversely proportional to the resistivity index of a porous medium. The proposed model was verified using the experimental data in different rocks (Berea, Boise sandstone, and limestone) at different temperatures up to 300°F. The results demonstrated that the oil and water relative permeabilities calculated from the experimental resistivity data by using the model proposed in this article were close to those calculated from the capillary pressure data in the rock samples with different porosities and permeabilities. The results demonstrated that the proposed approach to calculating two-phase relative permeability from resistivity data works satisfactorily in the cases studied.