Effect of pressure on optical and electrical properties of tungsten diselenide single crystals

Optical absorption spectra of tungsten diselenide (WSe₂) single crystals subjected to different values of pressure (0, 2, 4 and 6 GPa) were obtained in the spectral range 700–1450 nm with the help of a UV–VIS–NIR spectrophotometer. The spectra were thoroughly analyzed in the absorption edge region for obtaining direct as well as indirect band gaps in this material. The high temperature resistivity and thermoelectric power on WSe₂ single crystals at various pressures were also studied. The results and their implications are discussed in the article.     

Electronic properties of nanocrystalline tin oxide dispersed in monolithic mesoporous silica

This paper is devoted to the study of the electrical properties of nanocrystalline tin oxide dispersed in the mesoporous silica. By immersing the silica in precursor solutions with different concentrations and heat-treatment, different samples were obtained. With precursor concentrations increasing from 0.1 to 4.0 M, the resistivities of the samples decrease from 3.15×10⁶ to 2.43×10³ Ω cm. The resistivity changes with the measurement time, and the deviations from Ohm's law in the voltage–current (V–I) measurements illustrate the capacitance property of these nanocomposites. For this new kind of nanocomposites, the obtained results provide experimental evidence of the conducting mechanism for tin oxide nanoparticles.     

Investigations on Chemical Vapour Transport of Intermetallic Phases in the System Co/Fe/Si

The ternary phases existing on the quasi binary section CoSi/FeSi and CoSi₂/β‐FeSi₂ have been investigated by solid state reactions and chemical transport. The solid solution serie Co_xFe_1‐xSi can be described as a regular solution. The transport behaviour calculated is in good agreement with the experiments. The phases have been characterized by X‐ray powder diffraction, EDX and ICP‐OES. The temperature dependence of the resistivity has been measured from 20 K up to room temperature on single crystals.     

Structural and physical properties of ZnO:Al films grown on glass by direct current magnetron sputtering with the oblique target

ZnO:Al films were deposited on glass substrates at 300 K and 673 K by direct current magnetron sputtering with the oblique target. The Ar pressure was adjusted to 0.4 Pa and 1.2 Pa, respectively. All the films have a wurtzite structure and grow with a c-axis orientation in the film growth direction. The films grow mainly with columnar grains perpendicular to the substrate and some granular grains also exist in the films. The film deposited at 673 K and 0.4 Pa has the largest grains whereas that prepared at 300 K and 0.4 Pa consists of the smallest grains and is porous. The films exhibit an n-type semiconducting behavior at room temperature. The ZnO:Al film deposited at 673 K and 0.4 Pa has the lowest resistivity (3.40 × 10⁻³ Ω cm), the highest free electron concentration (4.63 × 10²⁰ cm⁻³) and a moderate Hall mobility (4.0 cm² V⁻¹ s⁻¹). The film deposited at 300 K and 0.4 Pa has the highest resistivity and the lowest free electron concentration and Hall mobility. A temperature dependence of the resistivity reveals that the carrier transport mechanism is Mott’s variable range hopping in the temperature region below 100 K and thermally activated band conduction above 215 K. The activation energy for the film deposited at 300 K and 0.4 Pa is 41 meV and that for the other films is about 35 meV. All the films have an average optical transmittance of over 85% in the visible wavelength range. The absorption edge of the film deposited at 300 K and 0.4 Pa shifts to the longer wavelength (redshift) relative to the films prepared under the other conditions.     

Low temperature electronic transport in sputter deposited a-IGZO films

We report on the electrical properties of a-IGZO thin films prepared by reactive sputtering. Without oxygen injection, dc resistivity measured at room temperature is ρ_300K = 1.22 × 10⁻³ Ωm. The lowest resistivity ρ_300K = 4.86 × 10⁻⁵ Ωm is obtained at a certain oxygen supply into the deposition process. Hall effect measurements of these films reveal a metallic-like behavior from mobility and carrier concentration vs. temperature in the range 15–300 K whereas films deposited without oxygen or for the highest oxygen flows behave as semiconductors. These enhanced electrical properties are connected to the oxygen vacancies and the local coordination structure around the In³⁺ cations.     

Unusual resistivity broadening in the mixed state of NdBa2Cu3O7−δ crystals grown by a crystal-pulling technique

In order to clarify the origin of a strong peak effect in the magnetization curve of NdBa₂Cu₃O_7−δ crystals, we investigated the superconductivity transition behavior of the in-plane resistivity in static magnetic fields up to 8 T. Comparing the results for the samples exhibiting and not exhibiting the peak effect, we found that the former (peak effect sample) shows lower resistivity above the vortex melting temperature. This implies that the pinning force is effective in the vortex liquid state. We also found that the normal state resistivity behaviors of some samples were unusual, indicating inhomogeneous current flow. These results suggest an existence of sheet-like pinning centers perpendicular to the conduction planes.     

Optimum packing density and crystal structure of tin-doped indium oxide thin films for high-temperature annealing processes

The influence of high-temperature annealing on the electrical properties and microstructure of tin-doped indium oxide (ITO) thin films was investigated as a function of oxygen gas flow ratio to argon gas during the sputtering deposition. The ITO thin films were annealed at 500 °C in air after the deposition. It was found that the ITO thin films, which were deposited in relatively low oxygen gas flow ratio, exhibited high Hall mobility and low-resistivity after the annealing. Furthermore, the X-ray reflectivity and diffraction measurement revealed that the ITO thin film with low-resistivity after annealing exhibited high packing density, smooth surface and low crystallization degree. It can be considered that the carrier electron scattering was suppressed with increasing in the packing density of the ITO thin film; as a result, the Hall mobility and resistivity were improved.     

YIHn: A New Family of Metal‐rich Hydride Halides

The graphite‐like yttrium hydride halides, YIH_n (0.8 ? n ? 1.0), have been prepared in quantitative yields by heating either YI₃, YH₂ (1:2) or stoichiometric YI₃, YH₂, Y mixtures in sealed Ta ampoules at 900°C. A lower limit of the homogeneity range, n ≈ 2/3, has been determined from dehydrogenation experiments. All YIH_n phases adopt the ZrBr‐type heavy‐atom structure. The hydrogen variation is accompanied by a change in the c lattice constant from 31.162(3) to 31.033(1) Å for n = 0.61(3) to 1.02(3). The YIH_n phases reversibly react with hydrogen at 400‐600°C to form the light green transparent compound YIH₂. However, increasing the reaction temperature above 700°C causes decomposition to an unidentified phase being in equilibrium with YH₂ and YI₃. The arrangement of the heavy atoms in YIH₂ (P m1; a = 3.8579(3) Å, c = 10.997(1) Å) corresponds to a four‐layer I‐Y‐Y‐I slab with the stacking sequence (AbaB) as was found by x‐ray powder diffraction data refinement with the Rietveld method. A miscibility gap exists between YIH and YIH₂. Samples YIH_n (n ? 1.0) show metallic conductivity at room temperature, which changes into semiconducting behavior with decreasing temperature as n approaches its lower value ≈ 2/3.     

Low temperature deposition of transparent conducting ITO/Au/ITO films by reactive magnetron sputtering

Transparent conducting indium tin oxide/Au/indium tin oxide (ITO) multilayered films were deposited on unheated polycarbonate substrates by magnetron sputtering. The thickness of the Au intermediated film varied from 5 to 20 nm. Changes in the microstructure, surface roughness and optoelectrical properties of the ITO/Au/ITO films were investigated with respect to the thickness of the Au intermediated layer. X-ray diffraction measurements of ITO single layer films did not show characteristic diffraction peaks, while ITO/Au/ITO films showed an In₂O₃ (2 2 2) characteristic diffraction peak. The optoelectrical properties of the films were also dependent on the presence and thickness of the Au thin film. The ITO 50 nm/Au 10 nm/ITO 40 nm films had a sheet resistance of 5.6 Ω/□ and an average optical transmittance of 72% in the visible wavelength range of 400-700 nm. Consequently, the crystallinity, which affects the optoelectrical properties of ITO films, can be enhanced with Au intermediated films.     

Electric transmission behavior of self-assembled Cu–W nano multilayers

Metallic nano multilayers were usually prepared by dual targets alternating deposition method. In this paper, a series of self-assembled Cu–W nano multilayers with different modulation periods were deposited on single crystal silicon substrate by dual targets confocal magnetron sputtering technique. The self-assembled film presented an alternation of W-rich layer and Cu-rich layer. The degree of coherence of the layered interface can be adjusted by controlling both the solid solubility of W-rich...