岩石电阻率毛管理论的验证

本文简要介绍了新的毛管理论.它是孔隙结构理论的一种,认为多种介质是由无限多的毛管组成。毛管压力曲线呈双曲线,毛管的孔径的分布曲线是幂函数。本文还着重用毛管理论公式求取含水岩石电阻率,在中原油田桥口、白庙地区作了一些验证,效果良好。     

细菌在电子行业高纯水系统运行中的影响与防治

阐述了在电子工业高纯水制取过程中,细菌对制水每个工艺环节的影响与采取的相应措施,说明了控制细菌繁殖对提高水质和延长备件使用寿命的重要性。     

过套管电阻率测井在中低渗透储层评价中的应用

过套管电阻率测井是电法测井中一个新的领域,通过测量金属套管壁外岩石的单位电阻率(p)可以评价储集层的含水饱和度,进而寻找未动用油气.跟踪油藏流体饱和度的变化以及油藏流体界面的运移情况,对解决老井和部分套管井的重新评价,以及开发过程中的油藏监测具有非常重要的意义和广阔的应用前景.在阐述过套管电阻率测井仪器结构及工作原理的基础上,通过对实际测井资料进行综合分析,总结了过套管电阻率测井资料的优势所在,并针对中低渗透储层评价的技术需求进行了积极地探索.     

Nd0.5 Cao.5MnO3电荷有序态下电荷输运机制的研究

制备了单相多晶Nd0.5Ca0.5MnO3样品,研究了该体系在电荷有序态下的电荷输运机制.研究表明,该体系在低温下表现为半导体输运特性,在250K处发生了电荷有序相变;电荷有序态下的电荷输运机制满足可变程跃迁模型.     

空气中飞秒激光自聚焦等离子体通道的电导特性

 通过电学探测法,采用不同焦距的聚焦透镜,在不同激光能量、不同极性外加电压的条件下,对大气中的飞秒激光自聚焦等离子体电离通道特性进行了实验研究。发现激光脉冲经不同焦距的聚焦透镜作用后均存在较长的电离通道,通道的等效电阻率有所变化,通常电阻率的最大值出现在透镜的几何焦点附近,并且焦距越长,此电阻率的局部峰值点离几何焦点位置越近。在外加不同极性电压时,自由电子受到所加静电场作用力、洛仑兹力以及有质动力的共同作用。焦点前,通道电流变化不明显,加正向电压产生的电流略微大于加负向电压时的电流;焦点后则是加负向电压产生的电流大于加正向电压时的电流。     

Development of Cu2+ substituted Ni–Zn ferrite nano-particles and their high-temperature semiconductor behaviour

Cu substituted nickel-zinc ferrites with composition Ni_0.2Cu_xZn_0.8-xFe₂O₄ (x ?= ?0 to 0.8) were developed with the technique of citrate-gel method. Rietveld analysis confirmed Fd-3m space grouped cubic spinel structure of single phase. Dislocation density (?) and packing factor percentage (%) of samples under study increase with increased Cu composition. The fine and uniform structure was confirmed from the studies of morphology index. Measurements on electrical resistivity were taken up by using the two-probe method at high temperatures. Arrhenius plots confirm an increase in observed resistivity (Ω) of ferrite samples with a temperature increase. The energy of activation in the ferromagnetic region (E_F) is less when compared to that of the paramagnetic region (E_P). The hopping mechanism decreases Curie temperature, while the activation energy of hopping increases with an increase in Cu substitution. Mobility of charge carriers and temperature are inversely correlated.     

X-ray Diffraction Study on Pressure-Induced Phase Transformation in Nanocrystalline GaAs

We have shown that the onset and transition pressures of the GaAs I M II transition are 17 GPa and 20 GPa, respectively, for both bulk and nanophase material. The observed gradual change in resistivity of nanophase GaAs at the semiconductor-to-metal transition is explained by the two-component model developed by Gleiter.     

Collapse of 5 f -Electron Ferromagnetism in UPtAl Under High Pressures

UPtAl exhibits a ferromagnetic ordering of U magnetic moments at temperatures below T C =42.5 K. The magnetic-ordering transition is accompanied by an anomaly in the temperature dependence of electrical resistivity. This allows us to determine the value of Curie temperature from 𝜌 vs. T data that can be measured at very high pressures, at which reliable magnetization measurements are difficult. We report on resistivity measurements performed on an UPtAl single crystal under hydrostatic pressures p h 8 GPa. It was observed that the initial increase of T C with p becomes gradually reduced for p >2 GPa until the maximum T C value of , 48 K is reached between 4 and 6 GPa that is followed by a progressively developing downturn of the T C ( p ) curve. The latter result is attributed to the approaching collapse of the U 5 f -moment ferromagnetism. Low-temperature resistivity data point to a rapidly reduced magnetic anisotropy at highest pressures.     

Microstructure and physical properties of bismuth–lead–tin ternary eutectic alloy

Using different experimental techniques, microstructure, electrical resistivity, attenuation coefficient, and mechanical and thermal properties of the quenched Bi–Pb–Sn ternary eutectic alloy have been investigated. From the X-ray analysis, Bi₃Pb₇ and Bi–Sn meta-stable phases are detected, in addition to rhombohedral bismuth and Sn body-centered tetragonal phases. This study also compared the physical properties of the Bi–Sn–Pb ternary eutectic alloys with the base binary Bi–Sn and Bi–Pb eutectic alloys.     

Studies on transport properties of copper doped tungsten diselenide single crystals

During recent years, transition metal dichalcogenides of groups IVB, VB and VIB have received considerable attention because of the great diversity in their transport properties. 2H-WSe₂ (Tungsten diselenide) is an interesting member of the transition metal dichalcogenide (TMDC's) family and known to be a semiconductor useful for photovoltaic and optoelectronic applications. The anisotropy usually observed in this diamagnetic semiconductor material is a result of the sandwich structure of Se-W-Se layers interacting with each other, loosely bonded by the weak Van der Waals forces. Recent efforts in studying the influence of the anisotropic electrical and optical properties of this layered-type transition metal dichalcogenides have been implemented by doping the samples with different alkali group elements. Unfortunately, little work is reported on doping of metals in WSe₂. Therefore, it is proposed in this work to carry out a systematic growth of single crystals of WSe₂ by doping it with copper in different proportions i.e. Cu_xWSe₂ (x=0, 0.5, 1.0) by direct vapour transport technique. Transport properties like low and high temperature resistivity measurements, high pressure resistivity, Seebeck coefficient measurements at low temperature and Hall Effect at room temperature were studied in detail on all these samples. These measurements show that tungsten diselenide single crystals are p-type whereas doped with copper makes it n-type in nature. The results obtained and their implications are discussed in this paper.