Power spectrum of density fluctuations in a finite reactive-diffusive system: resistance fluctuation spectroscopy

The measurement in thermal equilibrium of the vacancy contribution to the residual resistivity of metals has posed certain difficulties. The recent experiment of Celasco and co-workers represents a new, powerful approach to this problem, via the measurement of the power spectrum of the voltage noise generated by resistivity fluctuations. The latter originate in vacancy number fluctuations. We develop a theory for the power spectrum, incorporating three basic features. Vacancies can be annihilated in the material and they diffuse. Grain boundaries act as sources and sinks for vacancies. Both annihilation (a form of reaction) and diffusion are noisy processes. We therefore set up and solve a reactive-diffusive stochastic equation for the instantaneous density, with appropriatefinite boundary conditions. Assuming for simplicity that the grains are spherical, the power spectrum is evaluated exactly, in closed form. A detailed comparison with experiment is made. The physical origins of different time scales in the problem and the consequent frequency regimes in the power spectrum are analysed. Recognising the very general applicability of our theory, we also mention possible applications to other problems.     

Air-exposure effect on the resistivity of thin bismuth films

A survey of previous studies on vacuum deposited metal films shows that in high frequency measurements, explicit reference to the effect of air-exposure is not made. The present work on bismuth films (in-situ and air-exposed) at dc and rf frequencies, carried out mainly to study the air-exposure effect, shows that in-situ dc and rf and exposed rf all show nearly the same resistivity for thick continuous films. But air-exposed dc film resistances, when compared to in-situ dc resistances, show that the grain boundary reflection coefficient, R _gin Mayadas-Shatzkes model changes from 0·2 to 0·6. This is shown to be due to the grain boundary oxidation. The result is substantiated by rf measurements.     

Optimum packing density and crystal structure of tin-doped indium oxide thin films for high-temperature annealing processes

The influence of high-temperature annealing on the electrical properties and microstructure of tin-doped indium oxide (ITO) thin films was investigated as a function of oxygen gas flow ratio to argon gas during the sputtering deposition. The ITO thin films were annealed at 500 °C in air after the deposition. It was found that the ITO thin films, which were deposited in relatively low oxygen gas flow ratio, exhibited high Hall mobility and low-resistivity after the annealing. Furthermore, the X-ray reflectivity and diffraction measurement revealed that the ITO thin film with low-resistivity after annealing exhibited high packing density, smooth surface and low crystallization degree. It can be considered that the carrier electron scattering was suppressed with increasing in the packing density of the ITO thin film; as a result, the Hall mobility and resistivity were improved.     

Study of magnetic properties and magnetoelectric effect in (x) Ni0.5Zn0.5Fe2O4+(1−x)PZT composites

Magnetoelectric (ME) composites consisting of ferrite phase (x) Ni_0.5Zn_0.5Fe₂O₄+ferroelectric phase (1−x)Pb Zr_0.8Ti_0.2O₃ (Lead Zirconate Titanate—PZT) in which x (mol%) varies between 0 and 1 (0.0≤x≤1.0) was synthesized by double sintering ceramic method. The presence of constituent phases of ferrite, ferroelectric and their composites was confirmed by X-ray diffraction studies. The hysteresis measurement was used to study magnetic properties such as saturation magnetization (M_S) and magnetic moment (μ_B). The existence of single domain (SD) particle in the ferrite phase and mixed (SD+MD) particle in the composites was studied from AC susceptibility measurements. ME voltage coefficient for each mol% of ferrite phase was measured as a function of applied DC magnetic field and at the same time influence of magnetic field on ME response and resistivity of composites was studied. The maximum ME voltage coefficient of 0.84 mV/cm Oe was observed for 15% of ferrite phase and 85% of ferroelectric phase in the composites.     

Effect of Si/Ge ratio on resistivity and thermopower in Gd5SixGe4−x magnetocaloric compounds

The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd₅Si_xGe_4−x compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd₅(Si,Ge)₄-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of −8 μV/K was obtained at the magneto-structural transition for the x=2 compound.     

Oxidation temperature dependent properties of MgO thin film on alumina

The magnesium oxide thin films were prepared by thermal oxidation (in air) of vacuum evaporated magnesium thin film on alumina. It was found that oxidation temperature (623 K, 675 K and 723 K) and thickness (103 nm and 546 nm) dependent effects were prominently manifested in the surface morphology. Electrical and microwave properties (8-12 GHz) of the MgO thin films were also carried out. X-ray diffraction showed orientation along (2 0 0) and (2 2 0) directions. Flowerlike morphology was observed from SEM and flake like morphology for films of higher thickness oxidized at higher temperatures. The magnesium oxide thin film showed NTC behavior. Microwave transmittance was found to increase with increase in oxidation temperature but was lower than alumina. Frequency and oxidation temperature dependent microwave permittivity was obtained. The microwave dielectric constant varied in the range 8.3-15.3.     

岩石电阻率频散现象的实验研究

电介质理论分析和实验研究证明，岩石电阻率存在频散现象，主要是由于岩石松驰极化所致。在实际测井中，纯岩石及盐水溶液电阻率的频散可以忽略不计。随着岩石泥质含量、含油气饱和度的增高和饱印溶液浓度的降低，频散现象明显增强；随着测量频率的增高。所测岩石电阻率逐渐降低。在实际测井中，不同电阻率测井方法因使用频率不同，在泥质地层中的测量结果将存在差别。     

Effect of pressure on optical and electrical properties of tungsten diselenide single crystals

Optical absorption spectra of tungsten diselenide (WSe₂) single crystals subjected to different values of pressure (0, 2, 4 and 6 GPa) were obtained in the spectral range 700–1450 nm with the help of a UV–VIS–NIR spectrophotometer. The spectra were thoroughly analyzed in the absorption edge region for obtaining direct as well as indirect band gaps in this material. The high temperature resistivity and thermoelectric power on WSe₂ single crystals at various pressures were also studied. The results and their implications are discussed in the article.     

Breakdown of the fractional Stokes–Einstein relation in silicate liquids

The fractional Stokes–Einstein relation postulates a direct relationship between conductivity and shear flow. Like viscosity, the electrical resistivity of a glass-forming liquid exhibits a non-Arrhenius scaling with temperature. However, while both viscosity and resistivity are non-Arrhenius, here we show that these two properties follow distinct functional forms. Through analysis of 821 unique silicate liquids, we show that viscosity is best represented using the Mauro–Yue–Ellison–Gupta–Allan (MYEGA) model, whereas the resistivity of the same compositions more closely follows the Avramov–Milchev (AM) equation. Our results point to two fundamentally different mechanisms governing viscous flow and conductivity and therefore cast doubt on the general validity of the fractional Stokes–Einstein relation.     

Magnetic properties of ErN films

We report a magnetization study of stoichiometric ErN nanocrystalline films grown on Si and protected by a GaN passivating layer. According to the temperature dependence of the resistivity the films are heavily doped semiconductors. Above 100 K the magnetization data fit well to a Curie-Weiss behavior with a moment expected within the free-ion Er³⁺ multiplet. Below 50 K the Curie-Weiss plot steepens to an effective moment corresponding to that in the crystal-field determined quartet ground state, and develops a clear paramagnetic Curie-Weiss temperature of about 4.5 K. Zero-field- and field-cooled magnetization curves and the AC susceptibility firmly establish a ferromagnetic ground state within that multiplet below a Curie temperature of . Due to the (1 1 1) texture of the film the comparison between the magnetization behavior, when the field is applied parallel and perpendicular to the film plane, gives new information about the magnetic structure. An arrangement of the moments according to the model derived from neutron diffraction for bulk HoN is strongly suggested.