类锂离子（Z=11—20）1s^2s—1s^25p的跃迁能和振子强度

利用全实加关联(FCPC)方法计算了类锂离子(Z=11-20)激发态1s^25p的能级及精细结构劈裂，在此基础上计算了1s^2s-1s^25p的跃迁能和振子强度，相对论和质量极化效应对能量的修正用微扰论计算。还估算了来自量子电动力学效应的修正，所得到的理论结果与现有的实验数据符合得很好。     

一类非谐振子的相干态描述

利用相干态和正规乘积对一类微扰项为^↑H^1=λ^↑X^1的非谐振子进行了讨论，得到了^↑H^1矩阵元的精确解和^↑H^1对非谐振了能级的一级修正值，为处理非谐振子的微扰问题提供了一种新的方法。     

四维超混沌LC振子的同步研究

采用误差变量的线性组合对超混沌系统进行单向反馈控制，解析地证明了实现同步的可能性，从Lyapunov理论角度分析了对四维超混沌LC振子采用单变量单向耦合的可行性，求出同步所需控制器要满足的条件，当驱动系统参数做周期变化时，应用文中的控制器很好地实现了两个超混沌系统的同步．     

两个常振幅周期力作用的Duffing振子混沌存在区域的探测与反馈力对区域的影响的验证

根据计算机对方程的数值解的结论，确定了两个常振幅周期力作用的Ｄｕｆｉｎｇ振子混沌解的准确存在区域，并对反馈力作用后对混沌区的影响作了验证     

Van del Pol振子方程本征值的移动1／N展开计算

应用移动１／Ｎ展开方法，计算Ｖａｎ ｄｅｌ ｐｏｌ振子方程的本征值。对ｖ＝０，且应用ＳＵＳＹ－ＱＭ计算其本征值。当光泵参数ｇ远低于阈值或在阈值附近，所有本征值都能和数值计算结果相吻合。当ｇ远高于阈值时，基态和第一激发态本征值亦能和数值计算结果相吻合。     

单片机系统的仿真与脱机运行分析

在单片机用户系统的设计中,必须对硬件和软件进行具体仿真。通过分析单片机系统的晶振电路、上电总清和负载能力来解决实际遇到的问题。这对于硬件调换与处理故障有很大好处。     

耦合极限环振子同步的随机阻挫效应

考察了在考虑不同比例的阻挫时,极限环振子耦合系统同步的效应,称为随机阻挫同步效应.极限环振子相互耦合中含有较小比例的阻挫时,振子系统较为容易达到同步.而随着相互耦合中所含阻挫比例的增加,系统达到同步越来越困难.当达到一个较大的值时,同步就不可能达到.     

三维各向同性谐振子的Lie对称性与守恒量

从讨论完整保守力学系统微分方程的不变性 (即Lie对称性 )出发 ,得到其确定方程、结构方程及守恒量的形式 ,从而讨论三维各向同性谐振子的Lie对称性和相应的 10个Lie对称守恒量 .     

拟周期强迫Morse振子的长范围混沌

该文定性研究了拟周期强迫Morse振子的动力学性质，该模型是描述分子在外部拟周期电磁作用下分裂的一个经典模型．通过引进著名的McGeHee变换，并应用拟周期扰动的广义Melnikov方法，证明了该系统存在Smale马蹄意义下的混沌．所得的结果为以前的数值结果提供了一个解析证实．     

Electric field‐induced birefringence,optical rotatory power and conoscopic measurements of a chiral antiferroelectric smectic liquid crystal

Using a photoelastic modulator‐based novel set‐up, the electric field‐induced in‐plane birefringence and the optical rotatory power (ORP) were measured of an antiferroelectric liquid crystalline compound (12OF1M7) in its various phases using 30 µm homeotropic cells. Some specific signatures of the in‐plane birefringence and of the ORP for the various phases are being established. A relatively small threshold field is needed for the unwinding process of the antiferroelectric phase with a unit cell of four layers [SmC_A*(1/2)] compared with that for two layers [SmC_A*(0)]. On application of the electric field on the high temperature side of the SmC_A*(1/2) phase (80.1–81.5°C), a field‐induced phase transition is shown to occur directly to the SmC* phase, whereas on the lower temperature side (79.4–80.1°C) the transition takes place to SmC* via the SmC_A*(1/3) phase. The in‐plane birefringence exhibits a critical power law dependence for the SmC*–SmA transition. The ORP changes sign within the temperature range of the phase with a unit cell of three layers, reflecting a change in the handedness during this phase. Using tilted conoscopy, the results for the biaxiality and the apparent tilt angle for a smectic liquid crystal with a tilt angle greater than 18° in the ferroelectric phase are reported. The biaxiality implies the difference in the refractive indices between the two minor axes of the refractive index ellipsoid. The optical transmittance at visible and IR wavelengths for free‐standing films reveal characteristic reflection bands for these phases. The modulated structures of the reflected bands appear just above the SmC_A* phase and below SmC_A*(1/3); these are possibly due to an easy deformation of the phase by the surfaces.