Numerical Analysis and Simulation Analysis for Space‐Time Data

Spatio temporal dynamics of the positive column of a dc neon glow discharge is studied and investigated experimentally and theoretically. Spatio temporal analysis by means of biorthogonal decomposition method (BOD) gives insights into the mechanism of irregularity and can be employed for characterization of spatio‐ temporal complexity. In the weak nonlinear region, the wave dynamics is approximated by an amplitude equation of the Ginzburg‐Landau equation (CGLE) with complex coefficients and an additional integral term based on a fluid model. In the present work we deal with irregular spatio‐temporal data. A comparison between the numerical analysis of the experimental data and simulation results are studied. A good agreement between the dynamical behaviour for experimental space‐time data and theoretical simulation space‐time results was obtained. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

电子碰撞诱导原子从低激态向高激态弛豫

本文根据空心阴极放电中电子能量分布的物理图象,分析了原子从低激态向高激态弛豫的可能途径。建立高低激态集居数密度增量的关系。讨论高激态集居数密度增量获得可观量的条件。根据此条件分别选取钠原子的基态3s~2S_(1/2)和铜原子的亚稳态4s~2D_(3/2)为与激光共振的下能级,并激发具有较大自发发射几率的3s~2S_(1/2)→3p~2P°_(1/2)(和3p~2P°_(3/2))和4s~2D_(3/2)→4p~2P°_(1/2)跃迁,在远离上能级的高激态上观测到敏化荧光,并精确测得这些态的自发发射系数比值,而在更高激态上没有观测到敏化荧光,表明讨论中提出的条件是合理的。     

Modeling Studies of the Formation and Destruction of NO in Pulsed Barrier Discharges in Nitrogen and Air

This paper presents the results of modeling studies on the formation and destruction of NO in pulsed barrier discharges in nitrogen and air. The goals of this work are to identify the major processes involved in the formation and destruction of NO in air discharges, to distinguish between oxidative and reductive paths for NO destruction, to explore the potential importance of excited state reactions, to evaluate the role of water in such systems, and to identify the final products in the absence of heterogeneous processes. In all cases, the systems were modeled with 100×10^–4% (100 ppm) of added NO, with and without 3% added water. The focus in all of this work is chemistry in the post-pulse regime.     

Effects of Amplitude of the Radiofrequency Electromagnetic Radiation on Aqueous Suspensions and Solutions

The effects of radiofrequency (RF) (1–4) and magnetic fields (5–9) on the behavior of aqueous solutions and suspensions have been a popular subject in recent years. The mechanism of the magnetic “water memory” effect, though, is still largely unknown (5). In this work, we present evidence that the primary “receptor” of the electromagnetic radiation is a gas/liquid interface. Gas can be either already present in water or produced by the effects of electromagnetic fields. Perturbed gas/liquid interfaces require hours to equilibrate. Certain RF and magnetic signals also produce reactive oxygen and hydrogen species (superoxide, hydrogen peroxide, hydrogen, atomic hydrogen). The perturbed gas/liquid interface modifies the hydrogen bonding networks in water and also the hydration of ions and interfaces. Careful outgassing removes all of the effects of the electromagnetic fields, including the magnetic memory effect. The amplitude of the applied field influences the observed effects. Different amplitudes of RF radiation perturb the interfacial water in different ways and consequently affect the behavior of colloids and ions in specific manners. For instance, the bulk and template precipitation of calcium carbonate, zeta potentials of suspended colloids, rate of dissolution of colloidal silica, and attachment of colloidal silica to metal surfaces are modified in specific ways with the low amplitude or high amplitude RF treatments described in this paper. The solubility/diffusivity of gas species is also modified in a different manner, and it is probably at the core of the specificity of the RF amplitude effects.     

火花激发原子发射光谱分析不锈钢线材

火花激发原子发射光谱法应用于直径小于8mm的不锈钢线材的分析，对此类试样应用了一种特制的夹具，用块状标准样品制作工作曲线。由于线状试样和块状标准样品之间的形状差异所产生的系统不确定度借采用同类型标样作校正，对共存元素的相互干扰也采用了相应的校正方法。其它分析条件，包括严格的制样工序，氩气的纯度要求及其流量控制，以及光源的最佳条件等，作了深入的试验。按所提出的方法测定了不锈钢线材试样中碳、硅、锰、磷、硫、铬、镍及钛等8个元素。经校正后的结果与化学法测得结果相符。     

Formation of Negative Hydrogen Ions in a Ne–H2 Hollow Cathode Discharge

The formation of negative hydrogen ions in a conventional hollow cathode discharge has been investigated. A mixture of Ne and H₂ proved to be more advantageous compared to pure hydrogen. The study has been performed by solving the electron Boltzmann equation, coupled with a system of balance equations for neon and hydrogen neutral and charged particles. The vibrational distribution function of hydrogen has been calculated. Our calculations show unusually high population of vibrationally excited hydrogen molecules in a Ne–H₂ mixture, which explains the high density of negative hydrogen ions under optimal conditions (total gas pressure of few Torr, hydrogen number mole fraction of 1–10% and discharge current of 10–100 mA). Line intensities originating from highly excited neon states vs. hydrogen pressure have been calculated and a comparison with existing experimental results has been made.     

Investigation of glow discharge plasma for surface modification of polypropylene

Material surface properties of polymers, plastics, ceramics and textiles can be modified by atmospheric or low‐pressure glow discharge plasma. The aim of the present work is to study the surface modification of biaxially oriented polypropylene (BOPP) film in order to improve its hydrophilic and wetting properties. In this article we used low‐pressure, low‐temperature oxygen plasma for the surface treatment of BOPP. Scanning electron microscopy indicates that plasma treatment causes mainly physical changes by creating microcraters and roughness on the surface and increasing surface friction. Attenuated total reflectance infrared spectra show oxygen‐containing groups such as ? OH at 3513 cm^?1 and C?O at 1695 cm^?1. Microscopic investigations of water droplets on BOPP (treated, untreated) show that the interfacial adhesion of treated surfaces is increased. Copyright © 2003 John Wiley & Sons, Ltd.     

Microwave and RF surface wave sustained discharges as plasma sources for plasma chemistry and plasma processing

The surface wave produced plasma belongs to a class of RF and microwave induced plasmas. It results from the propagation of an electromagnetic wave which uses the plasma column it sustains and the plasma tube as its sole propagating media. This type of plasma offers several advantages compared to the positive column plasma of dc discharges or to other RF and microwave produced plasmas. Surface wave plasmas require no internal electrodes, and they can be applied over an extremely broad range of wave frequencies (27 MHz to 10 GHz demonstrated) and gas pressures (about 10^–4 Torr to a few times the atmospheric pressures). Using the surface wave plasma technique, a large variety of plasma column diameters have been created (0.5–150 mm demonstrated) and no limitation on plasma column length (column up to 6 m long demonstrated) has been found. The surface wave produced plasma is used in elemental analysis and to sustain emission in lasing media. This article is intended as a guide for potential users of surface wave plasmas in the field of plasma processing and plasma chemistry.     

甲烷二氧化碳介质阻挡放电转化产物分布研究

针对介质阻挡放电甲烷二氧化碳转化实验,分析了反应的产物分布,探讨了进料组成和反应器结构对反应的影响.反应产物包括:高H2/CO摩尔比的合成气、气态烃、高辛烷值的汽油组分、醇和酸等含氧有机物.对所述电极结构,产物的选择性随碳数增加而降低;高的甲烷进料浓度有利于烃的生成,对醇和酸的最佳甲烷进料体积分数范围在67.4％～75.1％;放电间隙越小,原料转化率和烃、酸的选择性越大,大的放电间隙对醇的生成有利.     

Temperature-dependent dry etching characteristics of III–V semiconductors in HBr- and HI-based discharges

Microwave discharges of HBr/H₂/Ar and H/H₂/Ar with additional do biasing of the sample were used to etch InP, GaAs, and AlGaAs at temperatures between 50–250°C. The etch rates increase by factors of 3–50 and 5–9, respectively, for HBr-and HI-based discharges over this temperature range, but display non-Arrhenius behavior. The etched surfaces became very rough above 100°C for InP with either discharge chemistry due to preferential loss of P, while GaAs and AlGaAs are more tolerant of the elevated temperature etching. The near-surface electrical properties of InP are severely degraded by etch temperatures above 100°C, while extensive hydrogen in-diffusion occurs in GaAs and AlGaAs under these conditions, leading to dopant passivation which can be reversed by annealing at 400°C.