Optical investigation of cavitation erosion by laser-induced bubble collapse

By means of a new force sensor based on optical beam deflection (OBD), the mechanical effects of laser-matter interaction underwater at different incident laser energy are investigated in detail. The experimental results show that a target underwater is impacted in turn by laser-plasma ablation force and high-speed liquid-jet impulse induced by bubbles collapse in the vicinity of a solid boundary. Furthermore, the amplitudes of the two forces increase monotonously with laser energy. According to the ablation force detected by the experiment and the theoretical relationship between laser intensity and ablation pressure, the value of liquid-jet impact against a solid boundary can be easily obtained. In addition, based on the model of a collapsing bubble, some characteristic parameters, such as the liquid-jet impact velocity, the maximum bubble radius, the bubble energy can also be obtained at different laser energy, which are valuable in the corresponding research fields.     

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga⁺ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.     

The First Results of Supersonic Molecular Beam Injection in the HL-2A Tokamak

HL-2A tokamak, the first tokamak with divertor in China, has been constructed and put into operation in 2002. The main parameters are R=1.65 m, a=0.4 m, BT=2.8 T, Ip = 0. 48 MA. The divertor of HL-2A is unique, because it is characterized with a large closed divertor chamber. The device has double divertor chamber, but now it is operating with lower single null configuration to study the physics of divertor for the next step design of a divertor. Supersonic molecular beam injection （SMBI） system with LN2 cooling trap was first installed and demonstrated on the HL-2A tokamak in 2004. The first results of SMBI into HL-2A plasma are to demonstrate the function of the HL-2A divertor and to observe the cold pulse propagation during multi-pulse SMBI on HL-2A Tokamak.     

暗中空光束角动量与中性原子的相互作用及其应用

综述了暗中空光束自旋与轨道角动量的一些性质及其与中性原子之间的相互作用,并简单介绍了暗中空光束及其角动量在原子光学和玻色_爱因斯坦凝聚(BEC)以及各种原子光学器件研制方面的应用.     

钢—混凝土组合梁的研究与发展

文章对钢—混凝土组合梁的研究和发展进行了分析,并介绍了有关钢—混凝土组合梁的研究方法及值得进一步研究的问题。     

应用无衍射贝塞尔光束的固体线膨胀系数测量系统

测量固体线膨胀系数是工程设计中的一项重要工作。这套非接触固体线膨胀系数测量系统利用激光三角法进行了设计。通过采用线阵CCD作为信号传感器来实现自动化测量。通过采用无衍射贝塞尔光束来提高测量精度和增大测量范围。     

内含热薄透镜CW色心激光腔的振荡光束特性

运用像镜原理分析三镜折迭腔、四镜折迭腔和四镜8字型环形腔等光学谐振腔的振荡光束特性及其热行为。讨论热效应对谐振腔振荡光束特性的影响规律以及像镜分析方法的精确性,给出谐振腔的热不灵敏条件。     

利用光热偏转技术实施光学薄膜弱吸收的多波长测量

介绍了光热表面形变光束偏转技术用于测量光学薄膜弱吸收的基本原理,简述多波长吸收测量装置的建立和测试过程,最后给出简单的测量实例.     

多电子束契伦柯夫自由电子激光振荡器

我们对多电子束契伦柯夫自由电子激光进行了首次实验研究。280A,500kV的电子束被引入一多介质矩形谐振腔,在频率为33.4GHz处产生了1.7MW的契伦柯夫相干受激辐射。互作用效率为1.2％。     

Quantitative measurements of Ge surface segregation during SiGe alloy growth

Ge segregation during the growth of Si_{1 − x}Ge_x alloys (x = 5, 10, 20, and 40%) was studied using X-ray photoelectron spectroscopy. The alloys were grown in thicknesses up to 20.0 nm at 500°C to measure quantitatively the amount of segregated surface Ge. The length of alloy needed to reach steady-state growth edge was found to decrease with increasing alloy concentration (4.8, 2.8, 2.4, and 2.0 nm, respectively). It was found that each alloy had a complete monolayer of Ge on the surface and an increasing amount of segregated Ge in the second layer (20, 55, 80, and 95%, respectively) during steady-state growth. An increase in the temperature of alloy growth (400–750°C) resulted in an increase in the leading edge of alloy growth but did not change the amount of segregated Ge during steady-state growth. We propose that film stress is responsible for the amount of Ge segregation.