Opinion dynamics in networks with heterogeneous confidence and influence

We propose a discrete-time model of opinion dynamics. The neighborhood relationship is decided by confidence radius and influence radius of each agent. We investigate the influence of heterogeneity in confidence/influence distribution on the behavior of the network. The simulations suggest that the heterogeneity of single confidence or influence networks can promote the opinions to achieve consensus. It is shown that the heterogeneous influence radius systems converge in fewer time steps and more often in finite time than the heterogeneous confidence radius systems. We find that heterogeneity does not always promote consensus, and there is an optimal heterogeneity so that the relative size of the largest consensus cluster reaches maximum in heterogeneous confidence and influence networks.     

浅谈如何办好企业内部刊物——以《电力职工教育培训》为例

介绍了《电力职工教育培训》杂志的历史和面临的严峻发展形势,提出了破解《电力职工教育培训》发展瓶颈的有效举措。     

Simple power supply for power load controlled isoelectric focusing

The power supply for IEF based on features of the Cockcroft‐Walton voltage multiplier (CW VM) is described in this work. The article describes a design of the IEF power supply, its electric characteristics, and testing by IEF analysis. A circuit diagram of the power supply included two opposite charged branches (each consisting of four voltage doublers). The designed CW VM was powered by 230 V/50 Hz alternate current and it generated up to 5 kV and 90 mW at the output. Voltage and current characteristics of the power supply were measured by known load resistances in the range from 10 kΩ to 1 GΩ, which is a common resistance range for IEF strip geometry. Further, the power supply was tested by a separation of a model mixture of colored pI markers using a 175 × 3 × 0.5 mm focusing bed. Automatically limited power load enabled analysis of samples without previous optimization of the focusing voltage or electric current time courses according to sample composition. Moreover, the developed power supply did not produce any intrinsic heat and was easy to set up with cheap and commonly available parts.     

Synthesis,characterizations, and electrochemical studies of ZnO/reduced graphene oxide nanohybrids for supercapacitor application

Herein the present article reports the fabrication of ZnO/reduced graphene oxide (ZnG) nanohybrid following a reduction-based process using a non-hazardous material, i.e., ascorbic acid. The morphology, structure, and bonding in the nanohybrid were analyzed using different techniques. Atomic force microscopy and scanning electron microscopy images show spherical particles of ZnO distributed over reduced graphene oxide (rGO). The X-ray diffraction analysis gives calculated values of crystallite size for ZnO as 15.62 nm. The successful incorporation of ZnO nanoparticles into rGO was confirmed using energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy analyses. The electrochemical studies were performed using an electrolyte (0.5 M H₂SO₄). The calculated value of specific capacitance for the nanohybrid was 345 Fg^-1, which was found to be almost double as compared to that of rGO, which is having a value of only 190.5 Fg^-1 at the same scan rate. The nanohybrid also showed excellent capacitance retention after 1,000 cycles.     

基于功率谱包络能量和SVM的舰用发动机故障诊断

发动机是军舰上的重要部件之一,其稳定性对军舰的正常航行具有重要影响。以舰用发动机关键部件(主泵轴承)为具体研究对象,提出了基于功率谱包络能量和支持向量机相结合的故障诊断方法。首先获取了大量可表征舰用发动机主泵轴承健康状态的振动加速度信息,对其进行功率谱分析,获得其功率谱的包络能量;以获取的舰用发动机主泵轴承功率谱的包络能量构建特征向量,并设计基于SVM的舰用发动机主泵轴承故障诊断模型,对主泵轴承的故障进行诊断研究。研究结果表明,采用基于功率谱包络能量和SVM相结合的舰用发动机关键部件故障诊断方法,可以很好实现主泵轴承的故障诊断效能,为舰用发动机主泵轴承故障诊断的工程应用奠定了基础。     

模拟退火优化SVM参数的变压器故障诊断

利用群智能算法优化支持向量机(SVM)参数往往需要引入额外的变量,使变压器故障诊断问题更加复杂,对此提出一种自适应的模拟退火算法优化(ASA)支持向量机参数。通过设计自适应的冷却进度表,使得寻参的过程仅仅依赖于退火速率以及网格搜索粒度,保持了较少的参数设置。在相关数据集上的实验表明,与已提出的粒子群算法(PSO)、遗传算法(GA)相比,ASA算法具有更快的收敛速度以及较好的诊断精度。利用自适应的模拟退火算法能够较好的优化SVM参数并提高变压器故障诊断的精度。     

行波光电二极管级联阵列输出功率合成研究

针对未来光载无线通信所需的高功率、大带宽的光电探测器,提出了一种行波光电二极管级联阵列功率合成电路.先将行波光电二极管级联,再按照阵列式结构将多组级联的光电二极管组合起来,实现射频功率合成,以获得高功率、大带宽的射频信号.采用EDA工具,对该光电转换射频功率合成电路进行仿真模拟.仿真结果表明,该功率合成电路可以有效地将各光电二极管的射频输出信号进行功率合成,功率合成后的信号带宽显著增加,仿真结果与理论分析完全一致.此外,电路分析表明,增加该功率合成电路中的高阻微带线的特性阻抗可以有效提高其输出射频信号的带宽.     

Small Data Scattering for the One-Dimensional Nonlinear Dirac Equation with Power Nonlinearity

We study scattering problems for the one-dimensional nonlinear Dirac equation (?_t + α?_x + iβ)Φ = λ|Φ|^p?1Φ. We prove that if p > 3 (resp. p > 3 + 1/6), then the wave operator (resp. the scattering operator) is well-defined on some 0-neighborhood of a weighted Sobolev space. In order to prove these results, we use linear operators D(t)xD(?t) and t?_x + x?_t ? α/2, where {D(t)}_t∈? is the free Dirac evolution group. For the reader's convenience, in an appendix we list and prove fundamental properties of D(t)xD(?t) and t?_x + x?_t ? α/2.     

QoS enhancement in OFDM based systems under transceiver impairments

Broadband wireless systems generally use orthogonal frequency division multiplexing (OFDM) with link adaptation (LA) to achieve high throughput while meeting bit error rate (BER) constraint. OFDM systems are known to be affected by non-linearity of high power amplifier (HPA) at transmitter, carrier frequency offset (CFO), symbol timing offset (STO) and channel estimation error at the receiver. The delay in feedback of channel state information (CSI) further affects the performance of LA procedures. The focus of this work is on performance analysis in presence of simultaneous affect of all these impairments on LA based OFDM systems. The results are found to be useful for threshold readjustment which is essential for successful implementation of LA scheme to counter the effects of change in operating conditions from ideal to as listed above.     

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n⁺” source/drain regions and “p⁺” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm² and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS.