Approximate Well Width Formulas of 1.55 μm Possible Compositional In_(1-x-y) Ga_yAl_xAs Strained Quantum-well Laser

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Investigation of the effects of porous layer on the electrical properties of Pt/n-GaN Schottky contacts

This article reports the effects of porosity on the enhancement of the Schottky barrier height (SBH) and reduction of the leakage current of Pt Schottky diode based on n-type GaN. The porous GaN layer in this work was generated by electroless chemical etching under UV illumination. For comparative study, two additional samples, i.e. one as-grown sample and one thermally treated sample, were also prepared. The structural studies showed that the porous GaN sample has a relatively rough surface morphology with slightly broader X-ray diffraction peak of the (0 0 0 2) plane. The current-voltage (I-V) measurements revealed that the electrical characteristics of the Pt Schottky diode were improved significantly by the presence of the porous layer, in which SBH was observed to be enhanced by 27%.     

High‐temperature stability of Au/p‐type diamond Schottky diode

Rectification properties of Au Schottky diodes were investigated in high‐temperature operation. These diodes were fabricated on a p‐type diamond single crystal using the vacuum‐ultraviolet light/ozone treatment. The ideality factor n of the Schottky diodes decreased monotonically with increasing measurement temperature whereas the Schottky barrier height ?_b increased, and ?_b reached 2.6 eV at 550 K with n of 1.1. Through high temperature heating at 870 K, the mean value of ?_b at 300 K changed permanently from 2.2 eV to 1.1 eV. Decrease of ?_b might originate from a dissolution of oxygen termination at the Au/diamond interface. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

富氮SiOxNy膜的电子注入特性

通过施加直流电压于P型SiOxNy薄膜，使热电子注入到薄膜而引起薄膜电学参数的改变。测试了薄膜在电子注入前后电学参数的变化，以研究薄膜的电子注入特性，探求薄膜的抗电子注入能力与制备工艺之间的关系。结合俄歇电子能谱和红外光谱分析膜的微机结构，对薄膜的电子注入特性进行了理论分析与讨论。     

Effects of H2 ambient annealing in fully 0 0 2-textured ZnO:Ga thin films grown on glass substrates using RF magnetron co-sputter deposition

Gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates using RF magnetron co-sputtering, followed by H₂ ambient annealing at 623 K to explore a possibility of steady and low-cost process for fabricating transparent electrodes. While it was observed that the ZnO:Ga thin films were densely packed c-axis oriented self-textured structures, in the as-deposited state, the films contained Ga₂O₃ and ZnGa₂O₄ which had adverse effect on the electrical properties. On the other hand, post-annealing in H₂ ambient improved the electrical properties significantly via reduction of Ga₂O₃ and ZnGa₂O₄ to release elemental Ga which subsequently acted as substitutional dopant increasing the carrier concentration by two orders of magnitude. Transmittance of the ZnO:Ga thin films were all over 90% that of glass while the optical band gap varied in accordance with the carrier concentrations due to changes in Fermi level. Experimental observation in this study suggests that transparent conductive oxide (TCO) films based on Ga doped ZnO with good electrical and optical properties can be realized via simple low-cost process.     

A note on TiN/Si (1 0 0) contacts

The contact properties of TiN on p- and n-type Si (1 0 0) obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed on p-type Si (1 0 0) as determined by forward current-voltage (I-V) measurements, but on n-type Si (1 0 0) the reverse I-V relation has shown a nonsymmetrical character. The zero-bias barrier heights evaluated by I-V on both type diodes were in the range of ∼0.60-0.64 V within the range of a few mVs, not more than ∼±(10-30) mV from each other. Incorporation of the effect of the series resistance in the I-V analysis resulted in a significant reduction in the magnitude of the ideality factor of the TiN/p-type specimen. Almost no change has occurred in the barrier height values. The contradictory reports on the TiN/n-type Si (1 0 0) diode characteristics in earlier works have been explained in terms of surface passivation of Si by the HF cleaning solution. It was stated in these reports that following annealing at 673 K the diodes have shown rectifying behavior. It has been speculated, that the nonsymmetrical nature of the TiN/n-Si (1 0 0) showing an intermediate behavior between Ohmic and rectifying behavior is a result of the specimen being exposed to a temperature lower than 673 K during sputtering where no complete depassivation took place. In order to obtain a rectifying behavior of TiN on both n-type and p-type Si surface passivation has to be eliminated.     

Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi2/Si Interface

A new method is proposed to modify the Schottky barrier height （SBH） for nickel silicide/Si contact. Chemical and electrical properties for NiSi2/Si interface with titanium, scandium and vanadium incorporation are investigated by first-principles calculations. The metal/semiconductor interface states within the gap region are greatly decreased, which is related to the diminutions of junction leakage when Ti-cap is experimentally used in nickel silicide/Si contact process. It leads to an unpinning metal/semiconductor interface. The SBH obeys the Schottky-Mort theory. Compared to Ti substitution, the SBH for electrons is reduced for scandium and increases for vanadium.     

Magnetocaloric effects in Ni-Mn-X based Heusler alloys with X=Ga, Sb, In

The Mn-based Heusler alloys encompass a rich collection of useful materials from highly spin-polarized systems to shape memory alloys to magnetocaloric materials. In this work we have summarized our studies of magnetostructural transitions from paramagnetic austenite to ferromagnetic martesite phases at TMC in Ni₂MnGa-based alloys (Ni₂Mn_0.75Cu_0.25-xCo_xGa, Ni₂Mn_0.70Cu_0.30Ga_0.95Ge_0.05, Ni₂Mn_1-xCu_xGa, Ni_2+xMn_1-xGa, and Ni₂Mn_0.75-xCu_xGa), and martensitic transitions from the ferromagnetic austenite to the martesite state in off-stoichiometric Ni-Mn-(In/Sb) Heusler alloys. The phase transition temperatures and respective magnetic entropy changes (ΔS) depend on composition in these systems and have been determined from magnetization measurements in the temperature interval 5-400 K, and in magnetic fields up to 5 T. It is shown that, depending on the composition and doping scheme the “giant” ΔS=40-60 J/(kgK) (for a field change of 5 T) can be observed in the temperature range (300-360 K) for the Ga-based alloys. The interplay between or coupling of the various transitions in Ni₂Mn(Mn,X) systems with X=Sb and In leads to exchange bias effects, giant magnetoresistance, and both inverse and “normal” magnetocaloric effects.     

Crystal structure and magnetic properties of RCu5−xPdx (R=Pr, Nd, Sm and Eu) alloys

We report the effect of replacing Cu by Pd in RCu₅ (R=Pr, Nd, Sm and Eu). The parent RCu₅ compounds crystallize in the hexagonal CaCu₅-type structure. The hexagonal symmetry is retained in PrCu₄Pd and EuCu_5−xPd_x (x=1 and 2) but the crystal structure changes to cubic AuBe₅-type in PrCu₃Pd₂, NdCu_5−xPd_x (x=1 and 2) and SmCu₄Pd. Substitution with Pd leads to lattice expansion and modifies the magnetic behavior. While PrCu₅ is known to be a van-Vleck paramagnet with a singlet ground state, PrCu₄Pd and PrCu₃Pd₂ show ferromagnetic-like behavior at low temperatures. SmCu₄Pd orders ferromagnetically near 28 K in contrast to the antiferromagnetic nature of the parent SmCu₅. The divalent nature of the Eu ions in EuCu₅ is retained in the ternary alloys, but the Curie temperature is reduced from 57 to 24.5 and 14.5 K in EuCu₄Pd and EuCu₃Pd₂, respectively, inferred from the location of peak in the heat capacity of these two compounds. The magnetic hyperfine field at the Eu nucleus measured with ¹⁵¹Eu Mössbauer spectroscopy in the ternary Eu-alloys is comparable to that in EuCu₅. The magnetic behavior of NdCu₄Pd is similar to that reported in NdCu₅. The zero-field-cooled, low-field magnetization of NdCu₃Pd₂ shows a region of diamagnetic behavior roughly between 21 and 4 K, but the field-cooled response is positive.     

Electron and hole effective masses in self-assembled quantum dots

Electron and hole effective masses in self-assembled InAs/GaAs quantum dots are determined by fitting the energy levels calculated by a single-band model to those obtained by a more sophisticated tight-binding method. For the dots of various shapes and dimensions, the electron effective-mass is found to be much larger than that in the bulk and become anisotropic in the dots of large aspect ratio while the hole effective-mass becomes almost isotropic in the dots of small aspect ratio. For flat InAs/GaAs quantum dots, the most appropriate value for the electron and hole effective-mass is believed to be the electron effective-mass in bulk GaAs and the vertical heavy-hole effective-mass in bulk InAs, respectively.