Synthesis of Cu–Cr diketo,sublimable, eutectic composite complex,rod crystals from LDH as suitable MOCVD precursor of CuCr2O4 catalysts upon ceramic preforms for N2O decomposition

Metal-acteylacetonates are important sublimable metal-organic precursors for metal-oxide thin film formation over solid preforms by MOCVD (Metal Organic Chemical Vapour Deposition) technique. Mixed-metal-acetylacetonates (MMAA) are suitable starting materials for mixed metal nano-oxidic thin film formation through such facile routes. Layered Double Hydroxides (LDH) of suitable metal ion combination can perform as appropriate starting base for neutralisation by enol form of 2,4-pentanedione or acteylacetonate tautomer ligands to obtain such MMAA. In this paper synthesis of composite crystals of Cu(II)/Cr(III) acetylacetonates (CCAA) is reported by the reaction of Cu–Cr-LDH with acetylacetone. The products were characterized by various different techniques. The surface area and pore volume analysis of the crystals showed the formation of nanopores in the compound. TEM analysis confirmed that the inner core of the nanoporous crystals of Cu(acac)₂ was covered by coating of poorly crystallised Cr(acac)₃ and they together form the composite crystals, and they together form the composite crystals. Due to eutectic mixture formation the melting point of CCAA lies in between the melting points of individual components Cu(acac)₂ and Cr(acac)₃ and shows sublimability, a property important for the formation of MOCVD films. The composite was used for CuCr₂O₄ spinel mixed oxide films formation over solid ceramic honeycomb monolithic substrates. Application prospects of the route in the field of catalysis is high as it can directly combine the benefits of mixed metal oxide catalysis and structured supports without the involvement of a third component. In this work the performance of such a catalytic device has been tested for low temperature decomposition of high Global Warming Potential (GWP) gas N₂O to N₂ and O₂.     

Synthesis of ZnAl2O4/α-Al2O3 complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnOfilm and α-Al2O3 substrate, ZnAl2O4/α-Al2O3 complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM)images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRDspectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/α-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes from c-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leadsto the (0001)-oriented GaN film.     

Systematic study of epitaxy growth uniformity in a specific MOCVD reactor

Gallium nitride (GaN) is a direct bandgap semiconductor widely used in bright light‐emitting diodes (LEDs). Thin‐film GaN is grown by metal‐organic chemical vapour deposition (MOCVD) technique. Reliability, efficiency and durability of LEDs are influenced critically by the quality of GaN films. In this report, a systematic study has been performed to investigate and optimize the growth process. Fluid flow, heat transfer and chemical reactions are calculated for a specific close‐coupled showerhead (CCS) MOCVD reactor. Influences of reactor dimensions and growth parameters have been examined after introducing the new conceptions of growth uniformity and growth efficiency. It is found that GaN growth rate is mainly affected by the concentration of (CH3)3Ga:NH3 on the susceptor, while growth uniformity is mainly influenced by the recirculating flows above the susceptor caused by natural convection. Effect of gas inlet temperature and the susceptor temperature over the growth rate can be explained by two competing mechanisms. High growth efficiency can be achieved by optimizing the reactor design.     

Selective growth of ZnO nanodots prepared by metalorganic chemical vapor deposition on focused-ion beam-nanopatterned substrates

Selective formation of ZnO nanodots grown by metalorganic chemical vapor deposition (MOCVD) was achieved on focused-ion beam (FIB)-nanopatterned SiO₂ and Si substrates. The selective formation characteristics, dimension, and density of ZnO nanodots on FIB-nanopatterned substrates strongly depended on the FIB-patterning and MOCVD-growth conditions. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned SiO₂ substrates is attributed to a surfactant effect of the implanted Ga which leads to the formation of the preferred nucleation sites for the growth of ZnO nanodots, while that of ZnO nanodots on nanopatterned Si substrates is mainly considered in terms of the generation of surface atomic steps and kinks, which are created by Ga⁺ ion sputtering, on the patterned Si areas.     

低温缓冲层对氧化锌薄膜质量的影响

利用金属有机化学气相沉积(MOCVD)法,在Si衬底上外延生长ZnO薄膜。为了改善氧化锌薄膜的质量,首先在Si衬底上生长低温ZnO缓冲层,然后再生长高质量的ZnO薄膜。通过XRD、SEM、光致发光(PL)光谱的实验研究,发现低温ZnO缓冲层可有效降低ZnO薄膜和Si衬底之间的晶格失配以及因热膨胀系数不同引起的晶格畸变。利用低温缓冲层生长的ZnO薄膜的(002)面衍射峰的强度要比直接在Si上生长的ZnO薄膜样品的高,并且衍射峰的半高宽也由0.21°减小到0.18°,同时有低温缓冲层的样品室温下的光致发光峰也有了明显的增高。这说明利用低温缓冲层生长的ZnO薄膜的结晶质量和光学性质都得到了明显改善。     

MOCVD工艺模拟系统

报道一个 Ｍ Ｏ Ｃ Ｖ Ｄ 全方位综合工艺模拟系统． 该系统包含反应室气流流体力学模拟、化学反应热力学模拟和沉积过程动力学模拟等 ３ 个子系统， 它们可以独立运行， 也可以联合运行．     

MOCVD激光诱导选择原子层外延(LALE)生长室的研究

本文对MOCVD激光诱导选择原子层外延进行了研究,设计并制作了一种激光诱导原子层外延生长室结构,该系统能实现低温MOCVD生产,可形成稳定的层流,易于生长均匀的外延层,通过激光诱导可实现选择性的原子层外延.     

The oxidation of GaAs(1 0 0) surfaces under atmospheric pressure conditions studied in real time using dynamic reflectance anisotropy spectroscopy at 2.6 and 4 eV

Using real-time, dynamic reflectance anisotropy spectroscopy (RAS) at both 2.6 eV and 4.0 eV, we demonstrate that an anisotropic oxide will form on As rich c(4 × 4)/d(4 × 4) GaAs surfaces when exposed to moisture- free air diluted in inert gases in a metal organic chemical vapour deposition (MOCVD) reactor, and that the initial c(4 × 4)/d(4 × 4) structure effects the resulting optical anisotropy of the oxide. This was achieved by investigating how the RA signals at 2.6 eV and 4 eV of annealed GaAs (1 0 0) surfaces evolve relative to the as-etched and as-annealed signals when exposed to oxygen. It is found that while the 2.6 eV response, which is known to be associated with the As dimers, degrades to pre-process levels indicating their destruction, the 4 eV signal, stabilizes at an intermediate, permanent level, suggesting the formation of an anisotropic oxide film whose structure is determined at least in part, by the initial c(4 × 4)/d(4 × 4) surface.     

在MOCVD外延生长中Ⅴ/Ⅲ比对AlxGa1-xAs外延层中A1组分分布的影响

本实验首次观察到用MOCVD方法在GaAs基片上外延生长AlxGa1-xAs/GaAs薄膜结构时,生长中所用的Ⅴ/Ⅲ比对外延层中Al组份x的分布的影响.当Ⅴ/Ⅲ比较低时,外延层中的Al组份出现很明显的层状阶梯形三层分布:靠近基片的一层中x值较低,而在外延层的表面层中x值较高.随着生长中所用的Ⅴ/Ⅲ比增加时,Al组份的分布趋于均匀.利用GaAs的高温热分解和Ga、As离子在晶体中的热扩散及其对外延生长的影响,对这一现象作了初步解释.     

MOCVD生长InP/GaInAsP DBR结构及相关材料特性

采用金属有机化学气相沉积(MOCVD)法InP衬底上成功地制备了GaxIn1-xAsyP1-y/InP交替生长的分布布喇格反射镜(DBR)结构以及与之相关的四元合金GaxIn1-xAsyP1-y和InP外延层。利用X射线衍射、扫描电子显微镜(SEM)、低温光致发光(PL)光谱等测量手段对材料的物理特性进行了表征。结果表明,在InP衬底上生长的InP外延层和四元合金GaxIn1-xAsyP1-y外延层77K光致发光(PL)谱线半峰全宽(FWHM)分别为9.3meV和32meV,说明形成DBRs结构的交替层均具有良好的光学质量。X射线衍射测量结果表明,四元合金GaxIn1-xAsyP1-y外延层与InP衬底之间的相对晶格失配仅为1×10-3。GaxIn1-xAsyP1-y/InP交替生长的DBR结构每层膜的光学厚度约为λ/4n(λ=1.55/μm)。根据多层膜增反原理计算得出当膜的周期数为23时,反射率可达90％。