Hamilton cycles in line graphs of 3-hypergraphs

We prove that every 52-connected line graph of a rank 3 hypergraph is Hamiltonian. This is the first result of this type for hypergraphs of bounded rank other than ordinary graphs.     

The effect of interface deformation due to gravity on line tension measurement by the capillary rise in a conical tube

Much research has been done on line tension measurement and interpretation, and attempts have also been made to measure line tension with simple, cheap and reliable methods that do not require excessive sophistication. Of particular interest is the method of determining line tensions of solid–liquid–vapor systems from the capillary rise in a conical tube. This simple and relatively inexpensive method gives line tension values comparable to those reported in the literature obtained via highly sophisticated instruments or techniques such as the well known axisymmetric drop shape analysis technique. The absolute value of line tension obtained using the conical tube method and assuming a spherical liquid–vapor interface is larger but of the same order of magnitude (1 μJ m⁻¹) as that reported in the literature. A theoretical analysis presented herein shows that by including the deformation of the liquid–vapor interface due to gravity in the conical capillary analysis, the line tension value inferred from the experimental data is reduced by approximately 50% and compares better with values in the literature obtained using other sophisticated methods. Thus a relatively simple, cheap, accurate and reliable method of line tension measurement has been advanced.     

Investigation of nu(N-H) and nu(C-N) stretching modes of propylamine (C3H7NH2) in a binary system C3H7NH2 + CH3OH via concentration dependent Raman study and ab initio calculations

Raman spectra of propylamine (C3H7NH2) and its binary mixtures, C3H7NH2 + CH3OH with varying mole fractions of the reference system, C3H7NH2, C were recorded in two widely apart wavenumber regions, 3100-3600 cm(-1) and 1225-1325 cm(-1). In the former region, the two Raman bands at approximately 3305 and approximately 3326 cm(-1), obtained after the line shape analysis, which were assigned to symmetric nu(N-H) and anti-symmetric nu(N-H) stretching modes, respectively, show a downshift upon dilution. However, whereas the nu(N-H) anti-symmetric mode shows a shift of 18.6 cm(-1), the nu(N-H) symmetric mode shows a much smaller shift (5.7 cm(-1)) between neat liquid and high dilution, C = 0.1. This aspect has been explained using the optimized geometries calculated employing ab initio theory (MP2 level) for the neat C3H7NH2 and its different hydrogen-bonded complexes. The linewidth versus concentration plot for the nu(N-H) anti-symmetric stretching mode, however exhibits a distinct maxima at C = 0.4, which has been explained as a slight departure from the concentration fluctuation model. In the latter region, a symmetric peak is observed, which corresponds to nu(C-N) stretching mode, which shows an upshift upon dilution and an almost linear concentration dependence. This has also been explained in terms of the parameters obtained from the optimized geometries of the different hydrogen-bonded complexes.     

工业造型设计的基本形态和形态构成

本文主要介绍了工业造型设计的形态和形态构成的一些基本知识。     

Line intensities of acetylene: New measurements in the 1.5-μm spectral region and global modelling in the ΔP=10 series

Using the Fourier transform spectra of the acetylene molecule recorded near 1.5-μm, the intensities of 111 lines belonging to seven hot bands of the main isotopologue ¹²C₂H₂ have been retrieved by means of a multispectrum fitting procedure. Considering the density of lines in the spectra, and the fact that the measured bands are the weakest observed, the accuracy of the measurements is around 10%. At first stage, an empirical treatment of these data has been performed, leading to the vibrational transition dipole moment squared and some Herman–Wallis coefficients. Then the measured line intensities of this work and collected ones from the literature have been treated simultaneously within the framework of the effective operator approach.     

Metric inequalities for routings on direct connections with application to line planning

We consider multi-commodity flow problems in which capacities are installed on paths. In this setting, it is often important to distinguish between flows on direct connection routes, using single paths, and flows that include path switching. We derive a feasibility condition for path capacities supporting such direct connection flows similar to the well-known feasibility condition for arc capacities in ordinary multi-commodity flows. The condition can be expressed in terms of a class of metric inequalities for routings on direct connections. We illustrate the concept on the example of the line planning problem in public transport and present an application to large-scale real-world problems.     

傅立叶变换激光腔内吸收光谱方法研究吸收谱线的强度与线形

在原有傅立叶变换激光腔内吸收光谱实验装置的基础上,利用信号差分方法减少了光强波动对实验干涉谱图的影响,改善了信噪比.通过对大气中氧气在760nm处的吸收谱线的绝对强度测量,验证了该方法的定量测量能力.在不同压力条件下对磷烷v=6伸缩局域模泛频吸收谱带进行了测量,获得了其谱线的自压力加宽和自压力线移参数.     

A Simple Relation between Line Shifts and Atomic Parameters

A comprehensive study of Xe II line shifts (after considering more than 900 transitions) provides the basis for establishing a simple empirical linear relation between the shifts and the inverse of the ionization potential for the er level.     

Characterization of the carrot defect in 4H-SiC epitaxial layers

Characterization of the epitaxial defect known as the carrot defect was performed in thick 4H-SiC epilayers. A large number of carrot defects have been studied using different experimental techniques such as Nomarski optical microscopy, KOH etching, cathodoluminescence and synchrotron white beam X-ray topography. This has revealed that carrot defects appear in many different shapes and structures in the epilayers. Our results support the previous assignment of the carrot defect as related to a prismatic stacking fault. However, we have observed carrot defects with and without a visible threading dislocation related etch pit in the head region, after KOH etching. Polishing of epilayers in a few μm steps in combination with etching in molten KOH and imaging using Nomarski optical microscope has been used to find the geometry and origin of the carrot defects in different epilayers. The defects were found to originate both at the epi-substrate interface and during the epitaxial growth. Different sources of the carrot defect have been observed at the epi-substrate interface, which result in different structures and surfaces appearance of the defect in the epilayer. Furthermore, termination of the carrot defect inside the epilayer and the influence of substrate surface damage and growth conditions on the density of carrot defects are studied.